Single Diode Schottky Barrier Diode Msi OUTLINE a eyo Package : M1F Unit?mm Weight 0.0272(Typ) 40V 1.33A sees Cathode mark 1 7 D i sea] os ire e/\@SMD Small SMD ets : {&VF=0,55V Low Vr=0.55V ness saReUAiaRS * Parsm 77) (S/S trail PrrsM Rating Type No. Date coda -39 ent vFYIRR Switching Regulator 1 DC/DCIYVN-4F DC/DC Converter | | 5 [| AS. TL. OA aR Home Appliance, Game, Office Automation ee Ais. K-39 7) LESS Communication, Portable set PBN LOU TIL Web 4 b MIS CRAKE) & COBH Favs, lI Ove RAR CMR F So. For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". Mew RATINGS @xtRAZH Absolute Maximum Ratings (hee TI=25C) H ae | ff ih HUA Item Symboll conditions Type No. MI1FS4 Unit tet F ib ME peo 9 Storage Temperature Ts tg 99~ 150 ie Hey bie : 4 Operation Junction Temperature Tj 150 Cc EA BUU TE vot Ware 40 V aximum Reverse Voltage 2 0 LtAM+ Yaa +8 AGO.5ms, duty 1/40 y Repetitive Peak Surge Reverse Voltage Vrrsm Pulse width 0.5ms, duty 1/40 45 V jose TS FIEMKE HD eit I 50Hz kai, BULA AT Ta=25C On alumina substrate 133 A Average Rectified Forward Current 2 50Hz sine wave, Resistance load Tasos ZY E JEANIE 0.87 a =" On glass-epoxy substrate ; ab A 2 MRE Tey 50Hz ik gkik, JFAR LAR 9 at A, T) = 25 30 A Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=25C HY ELAR 7 - te A1Ous, T]=25C AT Repetitive Peak Surge Reverse Power PRRSM | Pulse width 10ps, Tj=25C 60 W @BRN- RAHM Electrical Characteristics GkH#OeVYA T= 25C) IEEE Ve |Ir=11A, {erie MAX 0.55 V Forward Voltage Pulse measurement iA ae i. 2b AW : Reverse Current Tk Vr=VRM, pyise measurement MAX 08 mA dete FE Cj f=1MHz, Vr=10V TYP 50 pF Junction Capacitance 5 ety ih: 0 FIN Oil | Sunction to lead MAX 20 STL TS THEME fl Thermal Resistance * JE rh HAI On alumina substrate MAX 108 C/W Bia Junction to ambient Ty ba MAX 186 On glass-epoxy substrate 5 46 (4632-1) www.shindengen.co.jp/product/semilSmall SMD Single SBD M1FS4 Mist CHARACTERISTIC DIAGRAMS NTS Tel et Forward Voltage Forward Current Ir (A) [Pulse measurement) Forward Voltage Vr (V) NEF 7738 thee Forward Power Dissipation we 1 ats Ef Lee Forward Power Dissipation Pr [W) | a | D=tp/T T= arc} Average Rectified Forward Current lo [A) PAR ORG iii Peak Surge Forward Current Capability Sime wave SS 'Oms Mims! cycle [Non {T)=25C { Peak Surge Forward Current Irsm (A) Number of Cycles [cycle] AR RHE Reverse Current f=1S7FC( =125C(TYP 1ove( TY Reverse Current In (mA) [Pulse measurement) Reverse Voltage Vr (V] PRARAR Reverse Power Dissipation om a 1m 1 T Pip tp j= 150C Reverse Power Dissipation Pr [W) Reverse Voltage Vr ([V] HeaaR Junction Capacitance Junction Capacitance Cj [pF] Reverse Voltage Vr (V) F4lbF4yvINT Ta-lo Derating Curve Ta-lo On glass-epoxy substrate _ ee [Soldering land 2rewi Conductor layer Joye ge- O- ==k= Io = ive 1 Ve=av a D=.p/T Average Rectified Forward Current Io (A) \. Ambient Temperature Ta (C) F4lbF4vINT Ta-lo Derating Curve Ta-lo 24 On alumina substrate oA Average Rectified Forward Current Io (A) Ambient Temperature Ta (C) BOBLEARY TPR Repetitive Surge Reverse Power Derating Curve : VR Ver am 4 Tet ip) Persnt= Trex VRP Prrsm Derating [%) Operation Junction Temperature Tj (C) MOBLEAMY-VERARE Repetitive Surge Reverse Power Capability 4a} = rip: Prem =leex Var Ratio of Presm(tp)/ Presa (tp=l0ps) Pulse Width tp (ys) * Sine wave (i50Hz THE LTV ET. * SOHz sine wave is used for measurements. + SARE ORTE HL eho THD ET. Typical SRAM eK SRL EF. * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 47