INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-channel
C
VCES = 600V
IC = 24A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRGP4062DPbF
TO-220AB
IRGB4062DPbF
GCE
C
GCE
C
TO-247AD
IRGP4062D-EPbF
C
GCE
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1
IRGB4062DPbF
IRGP4062DPbF
IRGP4062D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 48
I
C
@ T
C
= 100°C Continuous Collector Current 24
ICM Pulse Collector Current, VGE = 15V 72
ILM Clamped Inductive Load Current, VGE = 20V
c
96 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 48
I
F
@ T
C
= 100°C Diode Continous Forward Current 24
I
FM
Diode Maximum Forward Current
e
96
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 250 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 125
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB ––– ––– 0.60
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB ––– ––– 1.53
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247 ––– ––– 0.65 °C/W
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247 ––– ––– 1.62
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600——V
VGE = 0V, IC = 100μA
f
CT6
V(BR)CES/TJTemperature Coeff. of Breakdown Voltage —0.30—V/°C
VGE = 0V, IC = 1mA (25°C-175°C) CT6
—1.601.95 IC = 24A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Collector-to-Emitter Saturation Voltage — 2.03 — V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11
—2.04— IC = 24A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700μA9, 10,
VGE(th)/TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12
gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80μs
ICES Collector-to-Emitter Leakage Current — 2.0 25 μAVGE = 0V, VCE = 600V
—775— VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A 8
—1.28— IF = 24A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
QgTotal Gate Charge (turn-on) — 50 75 IC = 24A 24
Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V CT1
Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V
Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V CT4
Eoff Turn-Off Switching Loss — 600 700 μJRG = 10, L = 200μH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 715 901 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V CT4
trRise time — 22 31 ns RG = 10
, L = 200μH, LS = 150nH, TJ = 25°C
td(off) Turn-Off delay time — 104 115
tfFall time — 29 41
Eon Turn-On Switching Loss — 420 — IC = 24A, VCC = 400V, VGE=15V 13, 15
Eoff Turn-Off Switching Loss — 840 — μJRG=10
, L= 200μH, LS=150nH, TJ = 175°C
f
CT4
Etotal Total Switching Loss — 1260 — Energy losses include tail & diode reverse recovery WF1, WF2
td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V 14, 16
trRise time — 24 — ns RG = 10, L = 200μH, LS = 150nH CT4
td(off) Turn-Off delay time — 125 — TJ = 175°C WF1
tfFall time — 39 — WF2
Cies Input Capacitance — 1490 — pF VGE = 0V 23
Coes Output Capacitance — 129 — VCC = 30V
Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz
TJ = 175°C, IC = 96A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 10, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp =600V 22, CT3
Rg = 10, VGE = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode — 621 — μJTJ = 175°C 17, 18, 19
trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A 20, 21
Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10
, L =200μH, Ls = 150nH WF3
Conditions
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
020 40 60 80 100 120 140 160 180
TC (°C)
0
5
10
15
20
25
30
35
40
45
50
IC (A)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0
VF (V)
0
20
40
60
80
100
120
IF (A)
-40°c
25°C
175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
ICE (A)
TJ = 25°C
TJ = 175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
0 102030405060
IC (A)
0
200
400
600
800
1000
1200
1400
1600
1800
Energy (μJ)
EOFF
EON
10 20 30 40 50
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
025 50 75 100 125
RG ()
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
010 20 30 40 50 60
IF (A)
10
15
20
25
30
35
40
IRR (A)
RG = 10
RG = 22
RG = 47
RG = 100
025 50 75 100 125
RG (
5
10
15
20
25
30
35
40
45
IRR (A)
0 25 50 75 100 125
Rg ()
0
200
400
600
800
1000
1200
1400
1600
Energy (μJ)
E
OFF
EON
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
0500 1000 1500
diF /dt ( A/μs)
5
10
15
20
25
30
35
40
45
IRR (A)
010 20 30 40 50 60
IF (A)
0
200
400
600
800
1000
Energy (μJ)
RG = 10
RG = 22
RG = 47
RG = 100
8 1012141618
VGE (V)
4
6
8
10
12
14
16
Time (μs)
40
80
120
160
200
240
280
Current (A)
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
0 500 1000 1500
diF /dt (A/μs)
500
1000
1500
2000
2500
3000
3500
4000
QRR (nC)
10
22
100
47
24A
48A
12A
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.2329 0.000234
0.3631 0.007009
J
J
1
1
2
2
R1
R1R2
R2
C
Ci= iRi
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.476 0.000763
0.647 0.003028
0.406 0.023686
J
J
1
1
2
23
3
R1
R1R2
R2R3
R3
C
Ci iRi
Ci= iRi
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247
Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.2782 0.000311
0.3715 0.006347
J
J
1
1
2
2
R1
R1R2
R2
C
Ci= iRi
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.693 0.001222
0.621 0.005254
0.307 0.038140
J
J
1
1
2
23
3
R1
R1R2
R2R3
R3
C
Ci iRi
Ci= iRi
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
DC
4x
DUT
360V
VCC
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-50
-40
-30
-20
-10
0
10
20
30
-0.15 -0.05 0.05 0.15 0.25
time (μS)
I
RR
(A)
Peak
I
RR
Q
RR
t
RR
10%
Pe a k
I
RR
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (μS)
V
CE
(V)
-50
0
50
100
150
200
250
300
I
CE
(A)
V
CE
I
CE
-100
0
100
200
300
400
500
600
-0.40 0.10 0.60
Time(μs)
V
CE
(V)
-5
0
5
10
15
20
25
30
EOFF Loss
5% VCE
5% ICE
90% ICE
tf
VCE
C
ICE
-100
0
100
200
300
400
500
600
11.70 11.90 12.10 12.30
Time (μs)
V
CE
(V)
-10
0
10
20
30
40
50
60
EON
ICE
C
90% test
10% ICE
5% VCE
tr
VCE
C
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
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IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
TO-247AD package is not recommended for Surface Mount Application.
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/