AFT18S230--12NR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 50 W RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 1805 to 1880 MHz.
1800 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ = 1400 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency Gps
(dB) D
(%) Output PAR
(dB) ACPR
(dBc) IRL
(dB)
1805 MHz 17.1 33.3 7.1 –33.6 –14
1840 MHz 17.5 33.3 7.1 –33.6 –16
1880 MHz 17.6 33.8 6.9 –33.7 –11
Features
High thermal conductivity packaging technology for reduced thermal
resistance
Greater negative gate--source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Optimized for Doherty applications
Document Number: AFT18S230--12N
Rev. 0, 7/2015
Freescale Semiconductor
Technical Data
1805–1880 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT18S230--12NR3
Figure 1. Pin Connections
OM--780--2L2L
PLASTIC
(Top View)
RFin/VGS
VBW (1)
VBW (1)
4
2
13
RFout/VDS
Note: Exposed backside of the package is
the source terminal for the transistor.
1. Device cannot operate with the VDD current
supplied through pin 2 and pin 4.
Freescale Semiconductor, Inc., 2015. All rights reserved.
2RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 78C, 50 W CW, 28 Vdc, IDQ = 1400 mA, 1842.5 MHz RJC 0.27 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc) IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc) IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc) IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 291 Adc) VGS(th) 1.0 2.0 2.5 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1400 mAdc, Measured in Functional Test) VGS(Q) 2.3 2.8 3.3 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.9Adc) VDS(on) 0.1 0.24 0.3 Vdc
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, Pout = 50 W Avg., f = 1880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 16.3 17.6 19.3 dB
Drain Efficiency D29.0 33.8 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.0 6.9 —dB
Adjacent Channel Power Ratio ACPR —–33.7 –30.0 dBc
Input Return Loss IRL —–11 –6 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. Part internally matched both on input and output. (continued)
AFT18S230--12NR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 309 W CW Output Power
(3 dB Input Overdrive from 204 W CW Rated Power) No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, 1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —204 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz bandwidth)
—–17 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point) VBWres —70 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =50WAvg. GF—0.4 —dB
Gain Variation over Temperature
(–30Cto+85C) G — 0.009 —dB/C
Output Power Variation over Temperature
(–30Cto+85C) P1dB —0.006 —dB/C
Table 6. Ordering Information
Device Tape and Reel Information Package
AFT18S230--12NR3 R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel OM--780--2L2L
4RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
Figure 2. AFT18S230--12NR3 Test Circuit Component Layout
CUT OUTAREA
AFT18S230--12N
Rev. C3
D51480
C5 R1
C9 C11 C12
C13
R2
C2C6
C17
C18
C4
C8
C16
C15
C7
C3
C10
C14
VGG VDD
VGG VDD
C1
Table 7. AFT18S230--12NR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C9 12 pF Chip Capacitors ATC100B120FW1500XT ATC
C5, C6, C7, C8, C17, C18 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C10 6.8 pF Chip Capacitor ATC100B6R8BW1500XT ATC
C11 1.1 pF Chip Capacitor ATC100B1R1BW1500XT ATC
C12 1.0 pF Chip Capacitor ATC100B1R0BW1500XT ATC
C13 0.4 pF Chip Capacitor ATC100B0R4BW1500XT ATC
C14 0.9 pF Chip Capacitor ATC100B0R9BW1500XT ATC
C15, C16 470 F, 50 V Electrolytic Capacitors 477CKS050M Illinois Capacitor
R1, R2 4.02 , 1/4 W Chip Resistors CRCW12064R02FKEA Vishay
PCB Rogers RO4350B, 0.020,r= 3.66 D51480 MTL
AFT18S230--12NR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
–18
–6
–9
–12
–15
–21
1760
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
16.4
18.4
18.2
18
–35
36
35
34
33
–32.5
–33
–33.5
–34
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
17.8
17.6
17.4
17.2
17
16.8
16.6
1780 1800 1820 1840 1860 1880 1900 1920
32
–34.5
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
–75
0
–15
–30
–60
1 200
IMD, INTERMODULATION DISTORTION (dBc)
–45
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
–1
–3
25
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 40 55 85
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
70
D
ACPR
ACPR (dBc)
–50
–20
–25
–30
–40
–35
–45
18.2
Gps, POWER GAIN (dB)
18
17.8
17.6
17.4
17.2
17
Gps
–5
1
VDD =28Vdc,P
out = 83 W (PEP)
IDQ = 1400 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
IM5--U
IM7--L
IM7--U
100
–1 dB = 27.5 W
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
–2 dB = 39.3 W
–3 dB = 53.4 W
IM5--L
IM3--U
VDD =28Vdc,I
DQ = 1400 mA
f = 1840 MHz, Single--Carrier W--CDMA
PARC (dB)
–3.4
–2.6
–2.8
–3
–3.2
–3.6
VDD =28Vdc,P
out =50W(Avg.),I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
D
PARC
Gps
IRL ACPR
IM3--L
PARC
6RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
TYPICAL CHARACTERISTICS
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
10
22
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
18
10 300
10
–60
ACPR (dBc)
16
14
12
0
–30
–40
–50
Figure 7. Broadband Frequency Response
10
22
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1400 mA
18
16
14
GAIN (dB)
20
12
1500 1600 1700 1800 1900 2000 2100 2200 2300
Gain
ACPR
D
Gps
1880 MHz
1805 MHz
VDD =28Vdc,I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
100
-- 2 5
5
0
–5
-- 1 0
-- 1 5
IRL (dB)
-- 2 0
1840 MHz
1880 MHz
1840 MHz
1805 MHz
1805 MHz 1840 MHz 1880 MHz
IRL
AFT18S230--12NR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 8. Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 1400 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz) Zsource
()Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
1805 1.17 – j4.25 1.10 + j3.92 1.10 – j3.55 16.8 54.0 250 53.4 –12
1840 1.69 – j4.78 1.38 + j4.25 1.06 – j3.65 16.7 54.0 253 53.5 –13
1880 3.16 – j5.35 2.16 + j4.57 1.09 – j3.92 16.5 54.0 250 52.4 –13
f
(MHz) Zsource
()Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
1805 1.17 – j4.25 1.07 + j4.03 1.10 – j3.61 14.7 54.7 298 55.8 –18
1840 1.69 – j4.78 1.39 + j4.39 1.13 – j3.80 14.6 54.8 299 56.1 –18
1880 3.16 – j5.35 2.25 + j4.78 1.16 – j4.07 14.3 54.7 296 54.3 –18
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQA = 1400 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz) Zsource
()Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
1805 1.17 – j4.25 1.12 + j4.11 1.95 – j2.42 19.5 52.3 171 64.8 –19
1840 1.69 – j4.78 1.48 + j4.43 1.88 – j2.54 19.3 52.2 168 64.6 –20
1880 3.16 – j5.35 2.41 + j4.75 1.77 – j2.67 19.1 52.2 164 64.1 –20
f
(MHz) Zsource
()Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
1805 1.17 – j4.25 1.08 + j4.14 1.80 – j2.54 17.3 53.2 211 67.0 –26
1840 1.69 – j4.78 1.42 + j4.52 1.69 – j2.54 17.3 52.9 197 66.5 –28
1880 3.16 – j5.35 2.40 + j4.89 1.73 – j2.72 17.1 52.9 193 65.4 –26
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
P1dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 8. P1dB Load Pull Output Power Contours (dBm)
REAL ()
–5
–
1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
1
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
3
–3
–4.5
–5
–
1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
13
–3
–4.5
–5
–1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
13
–3
–4.5
–5
–1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
13
–3
–4.5
P
E
50 50.5 51
51.5
50
52
52.5
53
53.5
54
54
56
48 52
58P
E
50
60
62
64
16.5
18
17
P
E
18.5
19
19.5
20
20.5
17.5
–18
–12
–20
–22
–24
–26
P
E
–14
–16
AFT18S230--12NR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 12. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–5
–
1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
1
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
3
–3
–4.5
–5
–
1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
13
–3
–4.5
–5
–1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
13
–3
–4.5
–5
–1.5
–2.5
IMAGINARY ()
1.5 2 2.50.5 3.5
–2
–3.5
–4
13
–3
–4.5
P
E
51 51.5
52
52.5
53
53.5
54
54.5
53.5
51
54
56
50
58
P
E
52
60
62
64
66
14.5
14
P
E
15
15.5
16
16.5
17
17.5
18
–18
–16
–20
–22
–24
–26
P
E
–28
–30
–32
10 RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
PACKAGE DIMENSIONS
AFT18S230--12NR3
11
RF Device Data
Freescale Semiconductor, Inc.
12 RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
AFT18S230--12NR3
13
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0July 2015 Initial Release of Data Sheet
14 RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
Information in this document is provided solely to enable system and software
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specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
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other product or service names are the property of their respective owners.
E2015 Freescale Semiconductor, Inc.
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Document Number: AFT18S230--12N
Rev. 0, 7/2015
