PD - 97471A AUTOMOTIVE GRADE AUIRF4104 AUIRF4104S Features O O O O O O O O Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET D V(BR)DSS 40V RDS(on) typ. max. G ID (Silicon Limited) S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID (Package Limited) 4.3m 5.5m k 120A 75A D2Pak AUIRF4104S TO-220AB AUIRF4104 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested ) IAR EAR TJ TSTG Max. 120 84 75 470 140 c Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy g c Operating Junction and Storage Temperature Range g A W 0.95 20 W/C V 120 220 See Fig.12a, 12b, 15, 16 mJ A mJ -55 to + 175 C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw j Thermal Resistance d Units k k Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Power Dissipation 300 (1.6mm from case ) 10 lbf in (1.1N m) y y Parameter Typ. Max. Units RJC Junction-to-Case --- 1.05 C/W RCS Case-to-Sink, Flat Greased Surface 0.50 --- --- 40 i Junction-to-Ambient (PCB Mount) RJA HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com Note to are on page 3 1 3/29/10 AUIRF4104/S Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) Parameter V(BR)DSS V(BR)DSS/TJ Min. Typ. Max. Units V Conditions Drain-to-Source Breakdown Voltage 40 --- --- VGS = 0V, ID = 250A RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.032 4.3 --- 5.5 VGS(th) gfs Gate Threshold Voltage Forward Transconductance 2.0 63 --- --- 4.0 --- V V VDS = VGS, ID = 250A VDS = 10V, ID = 75A IDSS Drain-to-Source Leakage Current --- --- --- --- 20 250 A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 200 -200 nA VGS = 20V VGS = -20V V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A e Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) Qg Total Gate Charge --- 68 100 Qgs Qgd Gate-to-Source Charge Gate-to-Drain ("Miller") Charge --- --- 21 27 --- --- td(on) tr Turn-On Delay Time Rise Time --- --- 16 130 --- --- td(off) tf Turn-Off Delay Time Fall Time --- --- 38 77 --- --- LD Internal Drain Inductance --- 4.5 --- ID = 75A nC ns Internal Source Inductance --- 7.5 VDD = 20V ID = 75A RG = 6.8 VGS = 10V e e Between lead, nH LS VDS = 32V VGS = 10V D --- 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V Ciss Coss Input Capacitance Output Capacitance --- --- 3000 660 --- --- Crss Coss Reverse Transfer Capacitance Output Capacitance --- --- 380 2160 --- --- Coss Coss eff. Output Capacitance Effective Output Capacitance --- --- 560 850 --- --- pF G = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V f Diode Characteristics Parameter S Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 470 (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge --- --- 23 6.8 35 10 ns nC TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s VSD trr Qrr ton 2 c Forward Turn-On Time A showing the integral reverse e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com AUIRF4104/S Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB 2 D PAK Machine Model N/A MSL1 Class M4 AEC-Q101-002 ESD Human Body Model Class H1C AEC-Q101-001 Charged Device Model RoHS Compliant Class C3 AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Notes: Repetitive rating; pulse width limited by This value determined from sample failure population, max. junction temperature. (See fig. 11). starting TJ = 25C, L = 0.04mH, RG = 25, IAS = 75A, VGS =10V Limited by TJmax, starting TJ = 25C, L = 0.04mH This is applied to D2Pak, when mounted on 1" square PCB RG = 25, IAS = 75A, VGS =10V. Part not ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. recommended for use above this value. R is measured at TJ approximately 90C. Pulse width 1.0ms; duty cycle 2%. This is only applied to TO-220AB pakcage. Coss eff. is a fixed capacitance that gives the Calculated continuous current based on maximum allowable same charging time as Coss while VDS is rising junction temperature. Bond wire current limit is 75A. Note that from 0 to 80% VDSS . current limitations arising from heating of the device leads may occur with some lead mounting arrangements.(Refer to AN-1140 http://www.irf.com/technical-info/appnotes/an-1140.pdf) www.irf.com 3 AUIRF4104/S 1000 1000 VGS 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS TOP 10 4.5V 1 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 20s PULSE WIDTH Tj = 25C 0.1 4.5V 10 0.1 1 10 100 0.1 10 100 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 T J = 25C T J = 175C 100 10 VDS = 15V 20s PULSE WIDTH 1 4 6 8 10 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 VDS, Drain-to-Source Voltage (V) Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) VDS, Drain-to-Source Voltage (V) 20s PULSE WIDTH Tj = 175C T J = 25C 100 80 60 TJ = 175C 40 20 VDS = 10V 380s PULSE WIDTH 0 12 0 20 40 60 80 100 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com ance AUIRF4104/S 5000 VGS, Gate-to-Source Voltage (V) 4000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 3000 2000 Coss 1000 Crss ID= 75A VDS= 32V VDS= 20V 16 12 8 4 0 0 1 10 0 100 40 1000.0 ID, Drain-to-Source Current (A) 10000 100.0 T J = 175C 10.0 T J = 25C 1.0 VGS = 0V 0.2 0.6 1.0 1.4 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 60 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD, Reverse Drain Current (A) 20 1000 100 100sec 10 1 1.8 OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec Tc = 25C Tj = 175C Single Pulse 0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF4104/S 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 120 LIMITED BY PACKAGE ID , Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 150 ID = 75A VGS = 10V 1.5 1.0 0.5 175 -60 -40 -20 T C , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) R3 R3 3 C 3 Ri (C/W) i (sec) 0.371 0.000272 0.337 0.001375 0.337 0.018713 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF4104/S DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 500 15V TOP BOTTOM 400 ID 11A 16A 75A 300 200 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 10 V ID = 250A 3.0 2.0 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com Fig 14. Threshold Voltage Vs. Temperature 7 AUIRF4104/S Avalanche Current (A) 1000 Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A EAR , Avalanche Energy (mJ) 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature 8 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF4104/S D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs VDS V GS RG RD D.U.T. + - VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF4104/S TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF4104 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Leadfree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF4104/S D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUF4104S YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Leadfree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF4104/S D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 TO-220AB package is not recommended for Surface Mount Application. 12 www.irf.com AUIRF4104/S Ordering Information Base part number Package Type AUIRF4104 AUIRF4104S AUIRF4104S AUIRF4104S www.irf.com TO-220 D2Pak Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF4104 Tube 50 AUIRF4104S Tape and Reel Left 800 AUIRF4104STRL Tape and Reel Right 800 AUIRF4104STRR 13 AUIRF4104/S IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 14 www.irf.com AUIRF4104/S Revision History Date 2/5/2010 www.irf.com Comments Revised with new AU template: 1)Add sentence below Absolute Max Rating 2)Update ESD by using ESD data and table from Anika 3)Update Part Marking drawing 4) Add Order Info table 5) Add Revision History 15