AH116 1/2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description * 800 - 1000 MHz * 17.5 dB Gain @ 900 MHz * +28 dBm P1dB * +43 dBm Output IP3 * +5V Single Positive Supply * Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Applications * Final stage amplifiers for Repeaters * Mobile Infrastructure The AH116 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband tuned application circuits with up to +43 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH116 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations. Specifications (1) Parameters @ -45 dBc ACPR Noise Figure Operating Current Range (3) Device Voltage 1 8 2 7 3 6 4 5 Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Typical Performance (1) Units Frequency Range Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power Functional Diagram MHz dB dB dB dBm dBm Min 15 +27 +42 Typ Max 900 17.5 18 7 +28.7 +43 dBm +23 dB mA V 7 250 +5 200 Parameters Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR 300 Units Typical MHz dB dB dB dBm dBm 900 17.5 -18 -7 +28.7 +43 dBm +23 dB 7 +5 V @ 250 mA Noise Figure Supply Bias 1. Test conditions unless otherwise noted: 25 C, +5V supply, 900 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Parameter Rating Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Thermal Resistance, Rth Junction Temperature -65 to +150 C +22 dBm +8 V 400 mA 2W 62C/W +200C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AH116-S8G 1/2 Watt, High Linearity InGaP HBT Amplifier AH116-S8PCB900 900 MHz Evaluation Board (lead-free/green/RoHS-compliant SOIC-8 Pkg) Standard tape / reel size = 500 pieces on a 7" reel Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 1 of 4 March 2008 AH116 1/2 Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, calibrated to device leads) S11 1.0 2. 0 DB(GMax) 0. 4 0 3. 4. 0 3. 0 0 4. 5.0 20 5 .0 0.2 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 15 0.4 10.0 0 Gain (dB) 0.8 2. 0 DB(|S[2,1]|) 25 Swp Max 5.05GHz 6 0. 0.8 1.0 S22 Swp Max 5.05GHz 6 0. 30 0. 4 Gain_Maximum Stable Gain 10 -10. 0 -10.0 .2 -0 2 -0. -5. 0 5 -4 .0 -5. 0 - Swp Min 0.05GHz -1.0 Swp Min 0.05GHz 0 2. .4 -0 -0 .6 1 .0 -2 0.9 -1.0 0.8 -0.8 0.5 0.6 0.7 Frequency (GHz) .6 0.4 -0 0.3 -0.8 -3 .0 0.2 -3 .0 0.1 -4 .0 .4 -0 0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 - 5050 MHz, with markers placed at 0.5 - 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 -2.72 -2.25 -2.31 -3.08 -5.79 -19.72 -6.06 24.16 20.33 17.23 15.63 15.58 15.22 11.91 133.35 124.95 119.37 98.28 69.70 25.60 -22.67 -36.72 -35.31 -34.90 -33.62 -32.10 -31.19 -33.26 29.75 13.96 2.32 -16.36 -37.73 -78.95 -129.67 -2.23 -3.08 -3.32 -3.48 -2.87 -2.27 -1.40 -102.97 -137.03 -159.63 -172.70 -176.25 -179.74 173.15 Device S-parameters are available for download from the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning Shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 2 of 4 March 2008 AH116 1/2 Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (AH116-S8PCB900) Typical RF Performance at 25 C 900 MHz 17.5 dB -18 dB -7 dB +28.7 dBm +43 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power +23 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current 7 dB +5 V 250 mA S21 vs Frequency 16 12 10 840 +25C 0 0 -5 -5 -10 -10 -15 -20 +85C -25 -40C -30 860 880 900 920 -35 840 940 +25C 860 880 P1 dB (dBm) 28 NF (dB) 8 6 +25C +80C -30 920 -35 840 940 +25C 24 +85C -40C 920 20 840 940 860 900 Frequency (MHz) OIP3 vs. Frequency OIP3 vs. Temperature 880 900 920 940 920 -40 -45 -50 -55 -60 -65 -70 -75 -80 +25C +85C -40C 18 940 19 20 21 22 23 24 18 20 Output Channel Power (dBm) OIP3 vs. Output Power freq. = 900, 901 MHz, +25C 45 freq. = 900, 901 MHz, +13 dBm /tone 45 45 43 43 41 39 37 OIP3 (dBm) 43 OIP3 (dBm) OIP3 (dBm) 880 Frequency (MHz) +25, +13 dBm / tone 35 840 860 ACPR vs. Channel Power -40C 900 -40C Frequency (MHz) 26 22 880 +85C -40C IS-95, 9 Ch. Fwd, 885KHz Meas BW, 900 MHz 30 860 +25C P1 dB vs. Frequency 10 0 840 -20 Frequency (MHz) Noise Figure vs. Frequency 2 900 -15 -25 +85C Frequency (MHz) 4 S22 (dB) S11 (dB) S21 (dB) 18 14 S22 vs. Frequency S11 vs. Frequency 20 ACPR (dBm) Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 41 39 880 900 Frequency (MHz) 920 940 39 37 37 860 41 35 35 -40 -15 10 35 Temperature (C) 60 85 8 10 12 14 16 Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 3 of 4 March 2008 AH116 1/2 Watt, High Linearity InGaP HBT Amplifier AH116-S8G (Lead-Free Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an "AH116G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "AH116-S8" or "ECP052G" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Mounting Configuration / Land Pattern 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com, www.TriQuint.com Page 4 of 4 March 2008