Data Sheet Switching Diode IMP11 Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 19 2.90.2 0.30.1 Each lead has same dimension 0.05 0.95 Construction Silicon epitaxial planar 0.30.6 (2) (1) 0.80.1 1.90.2 0.95 2.4 0.2 0.1 1.6 00.1 (3) 0.95 (6) 1.0MIN. (5) Features 1) Small mold type. (SMD6) 2) High reliability. 2.80.2 (4) 0.95 0.150.1 0.06 0.6 0.35 0.35 0.45 0.45 0.8MIN. SMD6 1.10.2 0.1 Structure ROHM : SMD6 JEDEC :S0T-457 JEITA : SC-74 week code 1Pin Mark Taping specifications (Unit : mm) 1.550.1 0 2.00.05 0.30.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (single) Io Isurge Surge current (t=1us) (Single) Power dissipation (TOTAL)(*1) Pd Junction temperature Tj Storage temperature Tstg (*1) Not exceed 200mW per element. Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time 1.05MIN 4.00.1 3.20.1 Limits 3.20.1 8.00.2 5.50.2 00.5 3.20.1 3.50.05 1.750.1 4.00.1 1.350.1 Unit V V mA mA A mW C C 80 80 300 100 4 300 150 55 to 150 Min. Typ. Max. - - 1.2 V IF=100mA Ct - - 0.1 3.5 A pF trr - - 4 ns VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 IR www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 Unit Conditions 2011.06 - Rev.B Data Sheet IMP11 Ta=125 10 Ta=150 Ta=-25 1 Ta=25 REVERSE CURRENT:IR(nA) 1000 Ta=75 100 Ta=25 10 Ta=-25 1 900 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 70 100 880 870 AVE:877.0mV 860 9 Ta=25 VR=70V n=10pcs 80 70 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 890 60 50 40 30 20 10 7 6 5 4 3 2 1 IR DISPERSION MAP 10 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 8.3ms 10 AVE:2.50A 5 Ct DISPERSION MAP Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 8 7 6 5 4 3 2 1 5 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 10 1ms time 300us 1 0.001 100 9 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 ELECTROSTATIC DISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 AVE:1.710pF 0 VF DISPERSION MAP 20 20 Ta=25 VR=6V f=1MHz n=10pcs 8 AVE:17.93nA 0 850 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 90 Ta=25 IF=100mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) f=1MHz 0.1 0 10 10000 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=150 Ta=125 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) 100000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 100 8 7 6 5 4 3 AVE:5.47kV 2 1 1000 AVE:1.32kV 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A