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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2015
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7
FPF2411  V / 6 A-Rated Bi-Direction Switch with Slew-Rate Control
FPF2411 IntelliMAX 6 V / 6 A - Rated Bi-Directional
Switch with Slew Rate Control and RCB
Features
Capability: 6 V
Low RON
- 10 mΩ at 5 V at PWRA or PWRB (Typ.)
- 12 mΩ at 3.8 V at PWRA or PWRB (Typ.)
Maximum Current Capability: 6 A (Bi-Directional)
Ultra-Low IQ:<1 µA
Active LOW Control Pin
2 ms Long Slew Rate
Reverse Current Blocking (RCB) during OFF
Robust ESD Capability:
- 5 kV HBM, 2 kV CDM
- 15 kV Air Discharge
- 8 kV Contact Discharge Under IEC 61000-4-2
Applications
Smartphone / Tablet PC
Mobile Devices
Portable Media Devices
Description
The FPF2411 is a 6 V / 6 A-rated bi-directional load
switch, consisting of a slew-rate-controlled, low-on-
resistance, P-channel MOSFET switch with protection
features. The slew-rate-controlled turn-on characteristic
prevents inrush current and the resulting excessive
voltage droop on the input power rails. The input voltage
range operates from 2.3 V to 5.5 V.
Bi-directional switching allows reverse current from VOUT
to VIN. The switching is controlled by active-LOW logic
input the ONB pin. The FPF2411 is capable of interfacing
directly with low-voltage control signal General-Purpose
Input / Output (GPIO).
The FPF2411 is available in 12-bump, 1.235 mm x
1.625 mm Wafer-Level Chip-Scale Package (WLCSP)
with 0.4 mm pitch.
Ordering Information
Part Number
Top
Mark
RON (Typ.)
at 3.8 VIN
Output
Discharge
ONB Pin
Functionality
Package
FPF2411BUCX_F130
QR
12 mΩ
No
Active LOW
12-Ball Wafer-Level Chip-Scale
Package (WLCSP), 3 x 4 Array,
0.4 mm Pitch, 250 µm Ball
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 2
Application Diagrams
FPF2411
PWRA PWRB
ONB GND
2.3~5.5V COUT
CIN
+
OFF
ON
FPF2411
PWRB PWRA
ONB GND
2.3~5.5V COUT
CIN
+
OFF
ON
Figure 1. High-Level Application Diagrams
FPF2411
PWRA PWRB
ONB GND
SYSTEM
1uF 1uF
ON OFF
PTVS
BATTERY
Note: Adding a PTVS such as RDP3101B is recommended at PWRB node in order to avoid device damage from
surge or equivalent stress.
Figure 2. Battery Isolation Application
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 3
Block Diagrams
CONTROL
LOGIC Turn-On Slew Rate
Controlled Driver
ESD
Protection
FPF2411
PWRA
ONB
PWRB
RPD
RCB
Figure 3. Block Diagram
Application Scenario
Table 1. PWRA and PWRB can be Input or Output, Depending on Scenario
PWRA
PWRB
ONB
Operations
X
X
HIGH
OFF state
PWRA and PWRB are isolated.
Current more than ISD or IRCB is NOT allowed.
2.3~5.5 V
Open
HIGH LOW
Turn-on with 2 ms of tR at PWRB.
Open
2.3~5.5 V
HIGH LOW
Turn-on with 2 ms of tR at PWRA.
2.3~5.5 V
Open
LOW
ON state
Operating current is from PWRA.
No problem with 6 A DC current flowing.
Open
2.3~5.5 V
LOW
ON state
Operating current is from PWRB.
No problem with 6 A DC current flowing.
2.3~5.5 V
Open
LOW HIGH
Turn-off with 1 ms of tF at PWRB.
Open
2.3~5.5 V
LOW HIGH
Turn-off with 1 ms of tF at PWRA.
Note:
1. X = Don’t care.
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 4
Timing Diagrams
PWRA or PWRB
ONB
HIGH
LOW
GND
4.2V
tR
tDON tDOFF tF
10%
50% 50%
10%
90% 90%
Figure 4. Dynamic Behavior
Pin Configuration
Figure 5. Top View
Figure 6. Bottom View
Pin Descriptions
Pin #
Name
Description
A2, B2, B4, C2, C4
PWRA
Power Input / Output: Bi-directional power path
A1, A3, B1, B3, C3
PWRB
Power Input / Output: Bi-directional power path
C1
GND
Ground
A4
ONB
ON/OFF Control Input: Active LOW.
4
A
B
C
123
1
2A
B
C
3
PWRB
GND
PWRB PWRA
PWRA
PWRA
PWRB
PWRB
ONB
PWRB
PWRA
PWRA
4
PWRB
PWRB
GND
PWRA
PWRA
PWRA
PWRB
PWRB
PWRB
321
ONB
PWRA
PWRA
4
A
B
C
A
B
C
ONB
PWRA
PWRA
PWRB
PWRB
PWRB
PWRA
PWRA
PWRA
234
PWRB
PWRB
GND
1
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 5
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VPIN
PWRA, PWRB, ONB to GND
-0.3
6.0
V
ISW
Maximum Continuous Switch Current
6
A
tPD
Total Power Dissipation at TA=25°C
1.48
W
TJ
Operating Junction Temperature
-40
+150
°C
TSTG
Storage Junction Temperature
-65
+150
°C
JA
Thermal Resistance, Junction-to-Ambient (1in.2 Pad of 2 oz. Copper)
84.1(2)
°C/W
ESD
Electrostatic Discharge
Capability
Human Body Model, JESD22-A114
5
kV
Charged Device Model, JESD22-C101
2
IEC61000-4-2 System Level
Air Discharge (PWRA, PWRB, ONB to GND)
15
Contact Discharge (PWRA, PWRB, ONB to GND)
8
Note:
2. Measured using 2S2P JEDEC std. PCB.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
Min.
Max.
Unit
VPWRn
PWRA, PWRB
2.3
5.5
V
TA
Ambient Operating Temperature
-40
85
°C
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 6
DC / AC Characteristics
Unless otherwise noted, VIN=2.3 to 5.5 V, TA=-40 to 85°C; typical values are at PWRA or PWRB=4.2 V and TA=25°C.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
VPWRA
VPWRB
Input Voltage
2.3
5.5
V
ISD
Shutdown Current
PWRA=ONB=5.5 V, PWRB=Open
OR
PWRB=ONB=5.5 V, PWRA=Open
1
μA
IPWRA
IPWRB
Quiescent Current
ONB=GND, IOUT=0 mA
1
μA
RON
On-Resistance
PWRA, PWRB=3.8 V, IOUT=200 mA, TA=25°C
12
17
mΩ
PWRA, PWRB=5 V, IOUT=200 mA, TA=25°C
10
16
VIH
ONB, Input Logic HIGH
Voltage(3)
PWRn=4.5 V, ILOAD=50 µA, TA (Max.) = 60°C
4.3
V
PWRn=3.6 V, ILOAD =50 µA, TA (Max.) = 60°C
3.4
VIL
ONB, Input Logic LOW
Voltage(3)
PWRn=4.5 V, ILOAD =50 µA, TA (Max.) = 60°C
0.4
PWRn=3.6 V, ILOAD =50 µA, TA (Max.) = 60°C
0.4
RPD
Pull-Down Resistance at
ONB
500
700
kΩ
Dynamic Characteristics: see definitions below
tDON
Turn-On Delay(4,5,6)
PWRA or PWRB =4.2 V, RL=10 Ω, CL=1 µF,
ONB=HIGH to LOW
1.5
ms
tR
Rise Time(4,5,6)
3.0
tON
Turn-On Time(4,5,6)
4.5
tDOFF
Turn-Off Delay(4,5,7)
PWRA or PWRB =4.2 V, RL=100 Ω, CL=1 µF,
ONB=LOW to HIGH
5.5
ms
tF
Fall Time(4,5,7)
1.0
tOFF
Turn-Off Time(4,5,7)
6.5
Notes:
3. VIH/VIL is tested under 50 µA current load
4. This parameter is guaranteed by design and characterization; not production tested.
5. tDON/tDOFF/tR/tF are defined in Figure 4.
6. tON=tR + tDON.
7. tOFF=tF + tDOFF.
Table 2. VIH / VIL [V]
ILOAD \ VBAT
2.7 V
3.7 V
4.35 V
0.1 mA
1.8 / 0.7
2.9 / 0.9
3.4 / 1.0
1 mA
1.1 / 0.7
2.1 / 0.9
2.8 / 1.0
3 mA
1.1 / 0.7
2.1 / 0.9
2.7 / 1.0
5 mA
1.0 / 0.7
2.0 / 0.9
2.7 / 1.0
10 mA
0.9 / 0.7
1.9 / 0.8
2.4 / 0.9
30 mA
0.9 / 0.7
1.5 / 0.8
2.2 / 0.9
50 mA
0.9 / 0.7
1.2 / 0.8
1.9 / 0.9
100 mA
0.9 / 0.7
1.0 / 0.8
1.1 / 0.9
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 7
Typical Performance Characteristics
Figure 7. PWRA Quiescent Supply Current vs.
Temperature
Figure 8. PWRB Quiescent Supply Current vs.
Temperature
Figure 9. PWRA Shutdown Supply Current
vs. Temperature
Figure 10. PWRB Shutdown Supply Current
vs. Temperature
Figure 11. Switch On Resistance vs. Temperature
Figure 12. On Resistance vs. PWRA Voltage
Figure 13. On Resistance vs. PWRB Voltage
Figure 14. Switch On Time vs. Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
-40
-15
10
35
60
85
PWRA QUIESCENT CURRENT (uA)
PWRA QUIESCENT SUPPLY CURRENT
vs. TEMPERATURE
TEMPERATURE(C)
2.7V
5.0V
4.2V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
-40
-15
10
35
60
85
PWRB QUIESCENT CURRENT (uA)
PWRB QUIESCENT SUPPLY CURRENT
vs. TEMPERATURE
TEMPERATURE(C)
4.2V
2.7V
5.0V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-40
-15
10
35
60
85
PWRA SHUTDOWN SUPPLY CURRENT (uA)
PWRA SHUTDOWN SUPPLY CURRENT
vs. TEMPERATURE
Vpwra=5V, Vpwrb=OPEN
Vpwra=2.7V, Vpwrb=OPEN
TEMPERATURE(C)
Vpwra=4.2V, Vpwrb=OPEN
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
-40
-15
10
35
60
85
PWRB SHUTDOWN SUPPLY CURRENT (uA)
PWRB SHUTDOWN SUPPLY CURRENT
vs. TEMPERATURE
TEMPERATURE(C)
Vpwrb=4.2V, Vpwra=OPEN
Vpwrb=2.7V, Vpwra=OPEN
Vpwrb=5V, Vpwra=OPEN
7
8
9
10
11
12
13
14
15
16
17
-40
-15
10
25
35
60
85
SWITCH ON RESISTOR (mohm)
SWITCH ON RESISTANCE Vs TEMERATURE
2.7V
TEMERATURE (°c )
4.2V
5.0V
ILOAD=100mA
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
2.0
3.0
4.0
5.0
6.0
RON(mohm)
ON-RESISTANCE vs. PWRB VOLTAGE
ILOAD=100mA
VPWRA(V)
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
2.0
3.0
4.0
5.0
6.0
RON(mohm)
ON-RESISTANCE vs. PWRB VOLTAGE
ILOAD=100mA
VPWRB(V)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
-40
-15
10
25
35
60
85
TURN ON TIME (ms)
SWTCH ON TIME Vs TEMERATURE
TEMERATURE (c )
CL= 1uF
RL= 10 Ohm
4.2v
2.7v
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 8
Typical Performance Characteristics (Continued)
Figure 15. Switch Off Time vs. Temperature
Figure 16. Turn-On Response
(VIN=4.2 V, CIN=1 µF, COUT=1 µF, RL=10 )
Figure 17. Turn-OFF Response (VIN=4.2 V, CIN=1 µF, COUT=1 µF, RL=100 )
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
-40
-15
10
25
35
60
85
TURN OFF TIME (ms)
SWITCH OFF TIME Vs TEMERATURE
TEMERATURE (c )
CL= 1uF
RL= 10 Ohm
2.7V
4.2V
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 9
Operation and Application Description
The FPF2411 is an ultra-low-RON P-channel load switch
with bi-directional controlled turn-on and Reverse
Current Blocking (RCB). The core is a 12 mΩ P-channel
MOSFET and controller capable of functioning over a
wide input operating range of 2.3 V to 5.5 V. The ONB
pin, active-LOW; controls the state of the switch. RCB
functionality blocks unwanted reverse current during
OFF states by power switch isolation between PWRA
and PWRB.
Inrush Current
Inrush current occurs when the device is turned on.
Inrush current is dependent on output capacitance and
slew rate control capability, as expressed by:
LOAD
R
INITIALIN
OUTINRUSH I
tVV
CI
where:
COUT: Output capacitance;
tR: Slew rate or rise time at VOUT;
VIN: Input voltage;
VINITIAL: Initial voltage at COUT, usually GND; and
ILOAD: Load current.
Higher inrush current causes higher input voltage drop,
depending on the distributed input resistance and input
capacitance. High inrush current can cause problems.
FPF2411 has a 3 ms of slew rate capability under
4.2 VIN at 1 µF of COUT and 10 Ω of RL. Inrush current
can be minimized and no input voltage drop appears, as
shown in Figure 16.
Reverse-Current Blocking
The reverse-current blocking feature protects the input
source against current flow from output to input when
the load switch is off by changing the internal body
diode direction.
Bypass Capacitor
To limit the voltage drop on the input supply caused by
transient inrush current when the switch turns on into a
discharged load capacitor; a capacitor must be placed
between the PWRA or PWRB and GND pins. A ceramic
capacitor of at least 1 µF placed close to the pins is
usually sufficient.
Board Layout
For best performance, all traces should be as short as
possible. To be most effective, the input and output
capacitors should be placed close to the device to
minimize the effect that parasitic trace inductance on
normal and short-circuit operation. Using wide traces or
large copper planes for all pins (PWRA, PWRB, ONB,
and GND) minimizes the parasitic electrical effects and
the case-to-ambient thermal impedance.
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 10
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 11
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 12
Physical Dimensions
Figure 18. 12-Ball, 3x4 Array, 0.4 mm Pitch, 250 µm Ball, Wafer-Level Chip-Scale Package (WLCSP)
Nominal Values
Bump
Pitch
Overall Package
Height
Silicon
Thickness
Solder Bump
Height
Solder Bump
Diameter
0.4 mm
0.586 mm
0.378 mm
0.208 mm
0.260 mm
Product-Specific Dimensions
Product
D
E
X
Y
FPF2411BUCX_F130
1.235 mm
1.625 mm
0.2125 mm
0.2175 mm
BOTTOM VIEW
SIDE VIEWS
TOP VIEW RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
E. PACKAGE NOMINAL HEIGHT IS 586 MICRONS
±39 MICRONS (547-625 MICRONS).
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
G. DRAWING FILENAME: MKT-UC012ZCrev2.
H. FAIRCHILD SEMICONDUCTOR RECOMMENDS THAT
LANDS IN THE LANDPATTERN ARE AT LEAST .215MM
DIAMETER AS MEASURED AT THE BOTTOM OF THE
LAND, NOT THE TOP EDGE.
0.20
0.40
0.80
1.20 Ø0.260±0.02
12X
(X)±0.018
(Y)±0.018
A
B
C
1 2 3
2X
PIN 1 AREA
0.03 CE
D
A
B
2X 0.03 C
0.05 C0.625
0.547
C
0.378±0.018
0.208±0.021
SEATING PLANE
D
F
F(Ø0.215)
Cu Pad
(Ø0.315)
Solder Mask
0.40
1.20
0.80
0.20
0.005 C A B
4
12X
12X
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF2411 • Rev. 1.7 13
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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