2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet -- production data Features Polarity BVCEO IC (max) hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 ) s ( ct u d o 1. @ Ic = 1 A and VCE = 2 V. Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed: FT= 130 MHz Hermetic package Manufactured according to ESCC 5000 specifications 100 krad low dose rate LCC-6 t e l o Figure 1. )- u d o Power MOSFET drivers r P e Description Internal schematic diagram s b O s ( t c Applications r P e 3 4 2 5 1 6 The 2ST3360 power bipolar transistor is a fast dual complementary device (NPN and PNP) housed in a single LCC-6 hermetic Hi-Rel package, specifically designed for aerospace HiRel applications. Its radiation hardness allows key parameters such as gain and leakage current to stay at best-in-class post irradiation levels. ST proprietary technology also results in a high degree of electrical performance for both transistors in the pair. The high switching performance of each make this device particularly suitable for power MOSFET driver applications. t e l o s b O Table 1. Device summary(1) Order code ESCC part number Quality level Radiation level Package Lead finish Mass EPPL 2ST3360U1 - Engineering model - LCC-6 Gold 0.20 g - 1. Contact ST sales office for information about the specific conditions for tape and reel packing. May 2012 This is information on a product in full production. Doc ID 022014 Rev 3 1/11 www.st.com 11 Contents 2ST3360 Contents 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ) s ( ct 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Order code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/11 Doc ID 022014 Rev 3 2ST3360 1 Absolute maximum ratings Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit NPN PNP VCBO Collector-base voltage (IE = 0) 60 -60 V VCEO Collector-emitter voltage (IB = 0) 60 -60 V VEBO Emitter-base voltage 6 -6 V 0.8 -0.8 IC ICM IB IBM (IC = 0) Collector current Collector peak current (tP < 5 ms) Base peak current (tP < 5 ms) Total dissipation at Tamb = 25 C Tstg Storage temperature Table 3. o s b O ) Thermal data RthJA e t e l s ( t c Parameter Thermal resistance junction-ambient max -0.2 o r P 0.4 Max. operating junction temperature Symbol -4 0.2 PTOT TJ c u d 4 Base current ) s ( t -0.4 A A A A 1.4 W -65 to 200 C 200 C Value Unit 125 C/W u d o Note: Mounted on a 15 x 15 x 0.6 mm ceramic substrate. r P e t e l o s b O Doc ID 022014 Rev 3 3/11 Pin configuration 2ST3360 2 Pin configuration Figure 2. Pin connections -ETALLIZED CORNER .0. %MITTER 0.0 %MITTER 0.0 #OLLECTOR .0. #OLLECTROR .0. "ASE ) s ( t 0.0 c "ASE u d ro let P e "OTTOM VIEW PAD SIDE o s b O ) s ( t c u d o r P e t e l o s b O 4/11 Doc ID 022014 Rev 3 !-V 2ST3360 3 Electrical characteristics Electrical characteristics TCASE = 25 C; unless otherwise specified. Table 4. Electrical characteristics for NPN Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 60 V VCB = 60 V, TA = 110 C 100 10 nA A IEBO Emitter cut-off current (IC = 0) VEB = 6 V 100 nA Base-emitter on voltage VCE = 2 V Collector-emitter saturation voltage IC = 0.8 A IC = 2 A DC current gain IC = 100 mA_ VCE = 2 V IC = 1 A _VCE = 2 V td tr ts tf Resistive load Delay time Rise time Storage time Fall time IC = 2 A VCC = 10 V IB(on) = - IB(off) = 200 mA VBE(off) = - 5 V fT Transition frequency VBE(on) VCE(sat)(1) hFE(1) IC = 100 mA IB = 40 mA IB = 100 mA d o r 80 160 t e l o s b O IC = 0.1 A __ VCE = 10 V mV uc 250 550 P e )- ) s ( t 650 mV 400 20 ns 70 ns 830 ns 67 ns 130 MHz s ( t c 1. Pulse test: pulse duration 300 s, duty cycle 2% Table 5. Symbol u d o Electrical characteristics for PNP(1) r P e s b O t e l o Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 60 V VCB = 60 V, TA = 110 C 100 10 nA A IEBO Emitter cut-off current (IC = 0) VEB = 6 V 100 nA Base-emitter on voltage VCE = 2 V Collector-emitter saturation voltage IC = 0.8 A IC = 2 A DC current gain IC = 100 mA_ VCE = 2 V IC = 1 A _ VCE = 2 V td tr ts tf Resistive load Delay time Rise time Storage time Fall time IC = 2 A VCC = 10 V IB(on) = - IB(off) = 200 mA VBE(off) = - 5 V fT Transition frequency IC = 0.1 A __ VCE = 10 V VBE(on) VCE(sat)(2) hFE(1) IC = 100 mA IB = 40 mA IB = 100 mA 650 mV 250 550 mV 80 160 400 22 ns 54 ns 360 ns 42 ns 130 MHz 1. For PNP type, voltage and current values are negative. 2. Pulse test: pulse duration 300 s, duty cycle 2% Doc ID 022014 Rev 3 5/11 Electrical characteristics 3.1 2ST3360 Test circuits Figure 3. Resistive load switching for NPN ) s ( ct u d o r P e t e l o 1. Fast electronic switch 2. Non-inductive resistor Figure 4. s b O Resistive load switching for PNP ) (s t c u d o r P e t e l o s b O 1. Fast electronic switch 2. Non-inductive resistor 6/11 Doc ID 022014 Rev 3 2ST3360 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 022014 Rev 3 7/11 Package mechanical data Table 6. 2ST3360 Ceramic leadless chip carrier 6 mechanical data mm. Dim. Min. A 1.53 C 0.78 D Typ. Max. Min. 1.96 .060 0.89 0.99 .031 .035 .039 1.52 1.65 1.78 .060 .065 .070 E 1.24 1.40 1.55 .049 .055 .059 F 5.77 5.84 5.92 .227 .230 .233 G 4.19 4.31 4.45 .165 .170 I 6.10 6.22 6.35 .240 .245 L 0.56 0.63 0.71 .022 .025 M 3.86 3.94 4.01 .152 N 1.14 1.27 1.40 .045 N1 2.41 2.54 2.67 N2 0.64 0.89 1.14 0.23 s b O r D1 2.08 2.28 ) (s Figure 5. P e let O 2.49 ete .095 ol Typ. Max. .077 ) s ( ct .175 .250 du o r P .025 .082 .028 .155 .158 .050 .055 .100 .105 .035 .045 .009 .090 .098 t c u Dimensions for ceramic leadless chip carrier 6 d o r o s b inch. I F A D E D1 L G M N C N1 r N2 7098021_B 8/11 Doc ID 022014 Rev 3 2ST3360 Order code 5 Order code Table 7. Ordering information(1) Order code ESCC part number Quality level Radiation level Package Lead finish Marking EPPL Packing 2ST3360U1 - Engineering model - LCC-6 Gold 2ST3360U1 - Wafflepack 1. Contact an ST sales office for information regarding the specific conditions for tape and reel packing. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 022014 Rev 3 9/11 Revision history 6 2ST3360 Revision history Table 8. Document revision history Date Revision Changes 18-Jul-2011 1 Initial release. 01-Feb-2012 2 Section 2. inserted. 04-May-2012 3 Updated VCE(sat) value and test condition in Table 4: Electrical characteristics for NPN and Table 5: Electrical characteristics for PNP. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 10/11 Doc ID 022014 Rev 3 2ST3360 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST's terms and conditions of sale. t e l o Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u d o r UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. P e t e l o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. s b O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 022014 Rev 3 11/11