ESM101 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION ESM106 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Fast switching Glass passivated device ldeal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram MELF MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .205 (5.2) .190 (4.8) SOLDERABLE ENDS .028 (.60) .018 (.46) .106 (2.7) .095 (2.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL ESM101 ESM102 ESM103 ESM104 ESM105 ESM106 UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 50 100 150 200 300 400 Volts Maximum RMS Volts VRMS 35 70 105 140 210 280 Volts VDC 50 100 150 200 300 400 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC IO Peak Forward Surge Current, IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) 1.0 30 I FSM CJ Operating and Storage Temperature Range Amps 15 T J , T STG Amps 10 pF 0 -65 to + 175 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL VF Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A =125 o C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. IR ESM101 ESM102 ESM103 0.95 ESM104 ESM105 ESM106 1.25 UNITS Volts 5.0 uAmps 100 trr 35 nSec 2001-4 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (V) (+) -1.0A 1cm SET TIME BASE FOR 5/10 ns/cm 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. TJ = 25 .1 .01 4 M10 ~ES 1.0 1.0 .1 101 TJ = 100 10 ESM INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) TJ = 150 10 TJ = 25 Pulse Width = 300uS 1% Duty Cycle .01 .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150175 AMBIENT TEMPERATURE ( FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 100 0 6 NOTES:1 Rise Time = 7ns max. Input Impedance = 10 OSCILLOSCOPE (NOTE 1) 1.0 SM 1 NONINDUCTIVE 0 -0.25A Single Phase Half Wave 60Hz Resistive or Inductive Load ~E PULSE GENERATOR (NOTE 2) 2.0 05 D.U.T (+) 25 Vdc (approx) (V) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE M1 10 NONINDUCTIVE ES 50 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( ESM101 THRU ESM106 ) 0 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 60 50 40 TJ = 25 30 20 10 0 FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) 70 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) 200 100 60 40 20 10 6 TJ = 25 4 2 1 .1 .5 1 2 5 10 20 50 100 200 400 NUMBER OF CYCLES AT 60Hz .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100 )