NTGS3441PT1G - ON Semiconductor

January, 2006 − Rev. 0 1Publication Order Number:

NTGS3441P/D

NTGS3441P

Power MOSFET

−20 V, −3.16 A, Single P−Channel TSOP−6

Features

•Ultra Low RDS(on) to Improve Conduction Loss

•Low Gate Charge to Improve Switching Losses

•TSOP−6 Surface Mount Package

•This is a Pb−Free Device

Applications

•High Side Switch in DC−DC Converters

•Battery Management

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS −20 V

Gate−to−Source Voltage VGS ±12 V

Continuous Drain

Current (Note 1) Steady

State TA = 25°CID−2.5 A

TA = 85°C −1.8

t = 10 s TA = 25°C −3.16

Power Dissipation

(Note 1) Steady

State TA = 25°C PD0.98 W

t = 10 s 1.60

Continuous Drain

Current (Note 2) Steady

State TA = 25°C ID−1.8 A

TA = 85°C −1.3

Power Dissipation

(Note 2) TA = 25°C PD0.51 W

Pulsed Drain Current tp = 10 msIDM −13 A

Operating Junction and Storage Temperature TJ,

TSTG −55 to

150 °C

Source Current (Body Diode) IS−1.5 A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s) TL260 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.0751 in sq)

1256

Device Package Shipping†

ORDERING INFORMATION

P−Channel

TSOP−6

CASE 318G

STYLE 1

MARKING

DIAGRAM

S3 MG

PT = Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

321

GateDrain

Source

Drain

DrainDrain

NTGS3441PT1G TSOP−6

(Pb−Free) 3000 / Tape & Ree

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

V(BR)DSS RDS(ON) TYP ID MAX

−20 V

91 mW @ 4.5 V

−3.16 A144 mW @ 2.7 V

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188 mW @ 2.5 V

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Ambient – Steady State (Note 3) RqJA 128 °C/W

Junction−to−Ambient – t = 10 s (Note 3) RqJA 78

Junction−to−Ambient – Steady State (Note 4) RqJA 244

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq)

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−20 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient V(BR)DSS/TJ16 mV/ °C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = −20 VTJ = 25°C −1 mA

TJ = 125°C −10

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA0.6 1.6 V

Negative Threshold Temperature Coefficient VGS(TH)/TJ3.2 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = −3.0 A 91 110 mW

VGS = 2.7 V, ID = −1.5 A 144 165

VGS = 2.5 V, ID = −1.5 A 188

Forward Transconductance gFS VDS = −15 V, ID =−1.5 A 4.0 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance CISS

VGS = 0 V, f = 1 MHz, VDS = −15 V

345 pF

Output Capacitance COSS 150

Reverse Transfer Capacitance CRSS 40

Total Gate Charge QG(TOT)

VGS = 4.5 V, VDS = −10 V; ID = −3.0 A

3.25 6.0 nC

Threshold Gate Charge QG(TH) 0.3

Gate−to−Source Charge QGS 0.6

Gate−to−Drain Charge QGD 1.4

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time td(ON)

VGS = 4.5 V, VDD = −10 V,

ID = −1.5 A, RG = 4.7 W

7.0 12 ns

Rise Time Tr14 25

Turn−Off Delay Time td(OFF) 13 25

Fall Time Tf4.0 8.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = −3.0 A TJ = 25°C 0.8 1.2 V

TJ = 125°C 0.7

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = −3.0 A

25 ns

Charge Time Ta10

Discharge Time Tb15

Reverse Recovery Charge QRR 15 nC

5. Switching characteristics are independent of operating junction temperatures

6. Pulse Test: pulse width = 300 ms, duty cycle = 2%

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TYPICAL PERFORMANCE CUR VES (TJ = 25°C unless otherwise noted)

1064

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−ID, DRAIN CURRENT (AMPS)

Figure 1. On−Region Characteristics

045

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.12

0.18

0.06 8

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

−ID, DRAIN CURRENT (AMPS)

0.5 8.5

0.27

9.57.56.5

0.24

0.21

0.18

0.15

5.5

0.09

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50 0−25 25

1.4

1.2

0.8

0.7 50 125100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

VGS = −10 V to −4.5 V −4 V

−3.5 V

−2 V

−2.5 V

−3 V

−1.9 V

0.24

TJ = 25°C

TJ = 100°C

TJ = −55°C

ID = −1.5 A

TJ = 25°C

VDS ≥ −10 V

0.30

0.06

75 150

TJ = 25°C

VGS = −2.5 V

VGS = −4.5 V

ID = −1.5 A

VGS = −4.5 V

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

015

12010

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−IDSS, LEAKAGE (nA)

100

1000

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ = 125°C

TJ = 100°C

VGS = 0 V

19753

0.12

4.53.52.51.5

1.5

1.3

1.1

0.9

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TYPICAL PERFORMANCE CUR VES (TJ = 25°C unless otherwise noted)

8124016

600

400

200

020

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

C, CAPACITANCE (pF)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Gate Threshold Voltage Variation

with Temperature

0.4

10.8

0.6

01.2

Figure 10. Diode Forward Voltage vs. Current

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−IS, SOURCE CURRENT (AMPS)

TJ = 25°C

VGS = 0 V

Coss

Ciss

Crss

VGS = 0 V

TJ = 25°C

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

QG, TOTAL GATE CHARGE (nC)

1.5 3

ID = −3.0 A

TJ = 25°C

VGS

QGS QGD

2.5

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VDS

3.521

RG, GATE RESISTANCE (OHMS)

1 10 100

t, TIME (ns)

100

td(off)

td(on)

VDD = −10 V

ID = −1.5 A

VGS = −4.5 V

0.5

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PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE N

456

0.05 (0.002)

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A0.1142 0.12202.90 3.10

B0.0512 0.06691.30 1.70

C0.0354 0.04330.90 1.10

D0.0098 0.01970.25 0.50

G0.0335 0.04130.85 1.05

H0.0005 0.00400.013 0.100

J0.0040 0.01020.10 0.26

K0.0079 0.02360.20 0.60

L0.0493 0.06101.25 1.55

M0 10 0 10

S0.0985 0.11812.50 3.00

____

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS

OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE

MOLD FLASH, PROTRUSIONS, OR GATE

BURRS.

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

0.95

0.037

1.9

0.075

0.95

0.037

ǒmm

inchesǓ

SCALE 10:1

1.0

0.039

2.4

0.094

0.7

0.028

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

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NTGS3441P/D

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