NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector-Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation, Ptot TA +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W TC +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICES IEBO Test Conditions Min Typ Max Unit VCE = 150V, VBE = 0 - - 1 mA VCE = 100V, VBE = 0 - - 1 A VCE = 100V, VBE = 0, TC = +150C - - 100 A VEB = 6V, IC = 0 - - 1 mA Collector-Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 80 - - V Collector-Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA, Note 1 - - 1 V Base-Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 500mA, Note 1 - - 1.6 V IC = 2A, VCE = 2V, Note 1 40 - 120 IC = 2A, VCE = 2V, TC = -55C, Note 1 15 - - IC = 500mA, VCE = 5V 50 - - MHz VCB = 10V, IE = 0, f = 1MHz - - 80 pF DC Current Gain Transition Frequency Collector-Base Capacitance hFE fT CCBO Turn-On Time ton VCC = 20V, IC = 500mA, IB1 = 500mA - - 0.35 s Storage Time ts VCC = 20V, IC = 5A, IB1 = -IB2 = 500mA - - 0.35 s Fall Time tf - - 0.3 s Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle = 1.5%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)