NTE2347
Silicon NPN Transistor
General Purpose, Medium Power
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), VCBO 150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (IB = 0), VCEO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage (IC = 0), VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, Ptot
TA ≤ +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC ≤ +25°C 7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC ≤ +100°C 4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA 175°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICES VCE = 150V, VBE = 0 – – 1 mA
VCE = 100V, VBE = 0 ––1µA
VCE = 100V, VBE = 0, TC = +150°C – – 100 µA
Emitter Cutoff Current IEBO VEB = 6V, IC = 0 – – 1 mA
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 80 – – V
Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA, Note 1 – – 1 V
Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 500mA, Note 1 – – 1.6 V
DC Current Gain hFE IC = 2A, VCE = 2V, Note 1 40 – 120
IC = 2A, VCE = 2V, TC = –55°C, Note 1 15 – –
Transition Frequency fTIC = 500mA, VCE = 5V 50 – – MHz
Collector–Base Capacitance CCBO VCB = 10V, IE = 0, f = 1MHz – – 80 pF
Turn–On Time ton VCC = 20V, IC = 500mA, IB1 = 500mA – – 0.35 µs
Storage Time tsVCC = 20V, IC = 5A, IB1 = –IB2 = 500mA – – 0.35 µs
Fall Time tf– – 0.3 µs
Note 1. Pulse Test: Pulse Duration = 300µs, Duty Cycle = 1.5%.
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45°
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)
