Page 3 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
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UGF09030
AC Characteristics (TC =25°C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Input Capacitance *
(VDS=26V, VGS=0V, f = 1MHz) CISS - - - pF
Output capacitance *
(VDS= 26V, VGS=0V, f = 1MHz) COSS - - - pF
Feedback capacitance *
(VDS=26V, VGS=0V, f = 1MHz) CRSS - - - pF
RF and Functional Tests (Tc=25°C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol Min Typ Max Unit
CW Small Signal Gain, Pout=0.1W
VDD=26V, IDQ=350mA GL - 17.5 - dB
CW Power Gain, Pout = 30 W
VDD=26V, IDQ=350mA GP - 17 - dB
CW Drain Efficiency, Pout = 30 W,
f=870 MHz, VDD=26V, IDQ=350mA, ηD - 45 - %
Two-Tone Common-Source Amplifier Power Gain
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
GTT - 17.5 - dB
Two-Tone Inter-modulation Distortion
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
IMD - -36 - dBc
Two-Tone Drain Efficiency
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
ηD2Τ - 36 - %
Input Return Loss
VDD =26V, Pout = 30 W PEP, IDQ=350mA
f1 =850 MHz and 900 MHz, Tone Spacing =
100kHz
IRL - 10 - dB
Load Mismatch Tolerance
VDS=26V, IDQ= 350 mA, Pout=30W, f=900 MHz VSWR* 10:1 - - Ψ
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.