Page 1 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a
minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
Power Amplifiers in Class AB operation.
30W, 1 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
• ALL GOLD metal system for highest reliability
• Industry standard package
• Suggested alternative to the MRF9030
• Internally matched for repeatable manufacturing
• High gain, high efficiency and high linearity
• Application Specific Performance, 870MHz
GSM: 30 Watts 17.50dB
EDGE: 13 Watts 17.50dB
IS95 CDMA: 3.5 Watts 17.50 dB
CDMA2000: TBD Watts 17.50dB
Package Type 440095
PN: UGF9030F
Package Type 440109
PN: UGF9030P
Page 2 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
Maximum Ratings
Rating Symbol Value Unit
Drain to Source Voltage, Gate connected to Source VDSS 65 Volts
Gate to Source Voltage VGSS +15 to –.5 Volts
Total Device Dissipation @ Tcase = 70oC
Derate above 70oC PD -
Watts
W/oC
Storage Temperature Range Tstg -65 to
+150
oC
Operating Junction Temperature TJ 200
oC
Thermal Characteristics
Characteristic Symbol Typical Unit
Thermal Resistance, Junction to Case ΘJC - oC/W
Electrical DC Characteristics (TC =25°C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Drain to Source Breakdown Voltage
(VGS=0, ID=1mA) BVDSS 65 - - Volts
Drain to Source Leakage current
(VDS=26V, VGS=0) IDSS - - 1.0 mA
Gate to Source Leakage current
(VGS=15V, VDS=0) IGSS - - 1.0
µA
Threshold Voltage
(VDS=10V, ID=1mA) VGS(th) - 3.5 - Volts
Gate Quiescent Voltage
(VDS=26 V, ID=350mA) VGS(Q) 3.0 4.0 6.0 Volts
Drain to Source On Voltage
(VGS=10V, ID=1A) VDS(on) - 0.3 - Volts
Forward Transconductance
(VDS=10V, ID=5A) Gm - - - S
Page 3 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
AC Characteristics (TC =25°C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Input Capacitance *
(VDS=26V, VGS=0V, f = 1MHz) CISS - - - pF
Output capacitance *
(VDS= 26V, VGS=0V, f = 1MHz) COSS - - - pF
Feedback capacitance *
(VDS=26V, VGS=0V, f = 1MHz) CRSS - - - pF
RF and Functional Tests (Tc=25°C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol Min Typ Max Unit
CW Small Signal Gain, Pout=0.1W
VDD=26V, IDQ=350mA GL - 17.5 - dB
CW Power Gain, Pout = 30 W
VDD=26V, IDQ=350mA GP - 17 - dB
CW Drain Efficiency, Pout = 30 W,
f=870 MHz, VDD=26V, IDQ=350mA, ηD - 45 - %
Two-Tone Common-Source Amplifier Power Gain
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
GTT - 17.5 - dB
Two-Tone Inter-modulation Distortion
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
IMD - -36 - dBc
Two-Tone Drain Efficiency
VDD=26V, IDQ=350mA, Pout = 30 W PEP
f1 =870 MHz and f2=870.1 MHz
ηD2Τ - 36 - %
Input Return Loss
VDD =26V, Pout = 30 W PEP, IDQ=350mA
f1 =850 MHz and 900 MHz, Tone Spacing =
100kHz
IRL - 10 - dB
Load Mismatch Tolerance
VDS=26V, IDQ= 350 mA, Pout=30W, f=900 MHz VSWR* 10:1 - - Ψ
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 4 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
VDD = 26V
IDQ = 350mA
Freq = 870MHz
Power Gain & Efficiency vs Output Power
12
13
14
15
16
17
18
19
36.7 38.55 40.68 42.77 44.54 46.27
POUT, Output Power (dBm)
Power Gain (dB)
0
10
20
30
40
50
Efficiency (%)
VDD = 26V
IDQ = 350mA
Freq = 870MHz
Intermodulation Distortion vs Output Power
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
4242414140403939
POUT Output Power (dBm) PEP
IMD3,3rd Order IMD (dBc)
VDD = 26V
IDQ = 350mA
Freq 1 = 891.0MHz
Freq 2 = 891.1MHz
Page 5 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
Product Dimensions
UPF0930F – Package Number 440095
Page 6 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
Package Dimensions
UGF09030P – Package Number 440109
Page 7 of 7 UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
Disclaimer: Specifications are subject to change without notice. Cree Microwave, Inc. believes the
information contained within this data sheet to be accurate and reliable. However, no responsibility
is assumed by Cree Microwave for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of Cree Microwave. Cree Microwave makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters
are the average values expected by Cree Microwave in large quantities and are provided for
information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s
technical experts for each application. Cree Microwave products are not designed, intended, or
authorized for use as components in applications intended for surgical implant into the body or to
support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for planning, construction, maintenance or direct operation of a
nuclear facility. Cree Microwave is a trademark and Cree and the Cree logo are registered
trademarks of Cree, Inc.
Contact Information:
Cree Microwave, Inc.
160 Gibraltar Court
Sunnyvale, CA 94089-1319
Sheryle Henson (Cree Microwave—Marketing Manager) 408-962-7783
Tom Dekker (Cree Microwave—Sales Director) 919-313-5639
