UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. * * * * * ALL GOLD metal system for highest reliability * Application Specific Performance, 870MHz Industry standard package Suggested alternative to the MRF9030 Internally matched for repeatable manufacturing High gain, high efficiency and high linearity GSM: 30 Watts 17.50dB EDGE: 13 Watts 17.50dB IS95 CDMA: 3.5 Watts 17.50 dB CDMA2000: TBD Watts 17.50dB Package Type 440095 PN: UGF9030F Package Type 440109 PN: UGF9030P Page 1 of 7 UGF09030 Rev. 2 Specifications subject to change without notice http://cree.com/ UGF09030 Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Symbol VDSS VGSS Value 65 +15 to -.5 PD -65 to +150 200 Tstg Operating Junction Temperature Unit Volts Volts Watts W/oC TJ o C o C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol Typical - JC Unit C/W o Electrical DC Characteristics (TC =25C unless otherwise specified) Rating Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=26V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quiescent Voltage (VDS=26 V, ID=350mA) Drain to Source On Voltage (VGS=10V, ID=1A) Forward Transconductance (VDS=10V, ID=5A) Symbol Min Typ Max Unit BVDSS 65 - - Volts IDSS - - 1.0 mA IGSS - - 1.0 A VGS(th) - 3.5 - Volts VGS(Q) 3.0 4.0 6.0 Volts VDS(on) - 0.3 - Volts Gm - - - S Page 2 of 7 UGF09030 Rev. 2 Specifications subject to change without notice http://cree.com/ UGF09030 AC Characteristics (TC =25C unless otherwise specified) Rating Input Capacitance * (VDS=26V, VGS=0V, f = 1MHz) Output capacitance * (VDS= 26V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=26V, VGS=0V, f = 1MHz) Symbol Min Typ Max Unit CISS - - - pF COSS - - - pF CRSS - - - pF RF and Functional Tests (Tc=25C unless otherwise specified, Cree Microwave Broadband Fixture) Rating CW Small Signal Gain, Pout=0.1W VDD=26V, IDQ=350mA CW Power Gain, Pout = 30 W VDD=26V, IDQ=350mA CW Drain Efficiency, Pout = 30 W, f=870 MHz, VDD=26V, IDQ=350mA, Two-Tone Common-Source Amplifier Power Gain VDD=26V, IDQ=350mA, Pout = 30 W PEP f1 =870 MHz and f2=870.1 MHz Two-Tone Inter-modulation Distortion VDD=26V, IDQ=350mA, Pout = 30 W PEP f1 =870 MHz and f2=870.1 MHz Two-Tone Drain Efficiency VDD=26V, IDQ=350mA, Pout = 30 W PEP f1 =870 MHz and f2=870.1 MHz Input Return Loss VDD =26V, Pout = 30 W PEP, IDQ=350mA f1 =850 MHz and 900 MHz, Tone Spacing = 100kHz Load Mismatch Tolerance VDS=26V, IDQ= 350 mA, Pout=30W, f=900 MHz Symbol Min Typ Max Unit GL - 17.5 - dB GP - 17 - dB D - 45 - % GTT - 17.5 - dB IMD - -36 - dBc D2 - 36 - % IRL - 10 - dB VSWR* 10:1 - - Note (unless otherwise specified): 1. Source and load impedance shall be 50 ohms. *No degradation in device performance after test. CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed. Page 3 of 7 UGF09030 Rev. 2 Specifications subject to change without notice http://cree.com/ UGF09030 Power Gain & Efficiency vs Output Power 19 Power Gain (dB) 17 40 16 30 15 20 VDD = 26V IDQ = 350mA Freq = 870MHz 14 Efficiency (%) 50 18 10 13 12 0 36.7 38.55 40.68 42.77 44.54 46.27 POUT, Output Power (dBm) Intermodulation Distortion vs Output Power 39 39 40 40 41 41 42 42 -20.0 VDD = 26V IDQ = 350mA Freq 1 V =DD 891.0MHz = 26V Freq 2 I=DQ891.1MHz = 350mA Freq = 870MHz -30.0 -40.0 -50.0 IMD3,3rd Order IMD (dBc) -10.0 -60.0 POUT Output Power (dBm) PEP Page 4 of 7 UGF09030 Rev. 2 Specifications subject to change without notice http://cree.com/ UGF09030 Product Dimensions UPF0930F - Package Number 440095 Page 5 of 7 UGF09030 Rev. 2 Specifications subject to change without notice http://cree.com/ UGF09030 Package Dimensions UGF09030P - Package Number 440109 Page 6 of 7 UGF09030 Rev. 2 Specifications subject to change without notice http://cree.com/ UGF09030 Disclaimer: Specifications are subject to change without notice. Cree Microwave, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree Microwave for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree Microwave. Cree Microwave makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree Microwave in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree Microwave products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Cree Microwave is a trademark and Cree and the Cree logo are registered trademarks of Cree, Inc. Contact Information: Cree Microwave, Inc. 160 Gibraltar Court Sunnyvale, CA 94089-1319 Sheryle Henson (Cree Microwave--Marketing Manager) 408-962-7783 Tom Dekker (Cree Microwave--Sales Director) 919-313-5639 Page 7 of 7 UGF09030 Rev. 2 Specifications subject to change without notice http://cree.com/