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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
1
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
General Description
Features
Functional Diagram
The HMC608LC4 is a high dynamic range GaAs
pHEMT MMIC Medium Power Amplier housed in a
leadless “Pb free” SMT package. The amplier has
two modes of operation: high gain mode (Vpd pin
shorted to ground); and low gain mode (Vpd pin left
open). The electrical specications in the table below
are shown for the amplier operating in high gain
mode. Operating from 9.5 to 11.5 GHz, the amplier
provides 29.5 dB of gain, +27.5 dBm of saturated
power and 23% PAE from a +5V supply voltage.
Noise gure is 6 dB while output IP3 is +33 dBm. The
RF I/Os are DC blocked and matched to 50 Ohms
for ease of use. The HMC608LC4 eliminates the
need for wire bonding, allowing use of surface mount
manufacturing techniques.
Output IP3: +33 dBm
Saturated Power: +27.5 dBm @ 23% PAE
Gain: 29.5 dB
Supply: +5V @ 310 mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Electrical Specications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2]
Typical Applications
The HMC608LC4 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military End-Use
Parameter Min. Typ. Max. Units
Frequency Range 9.5 - 11.5 GHz
Gain [3] 27 29.5 dB
Gain Variation Over Temperature 0.02 0.03 dB/ °C
Input Return Loss 13 dB
Output Return Loss 19 dB
Output Power for 1 dB Compression (P1dB) 23 27 dBm
Saturated Output Power (Psat) 27. 5 dBm
Output Third Order Intercept (IP3) 33 dBm
Noise Figure 6.0 dB
Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] 310 350 mA
[[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical.
[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.
[3] In low gain mode, typical gain is 22 dB and typical current is 67 mA.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
7 8 9 10 11 12 13 14
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
24
26
28
30
32
34
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
3
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Power Compression @ 10.3 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain, Power & Output IP3
vs. Supply Voltage @ 10.3 GHz Reverse Isolation vs. Temperature
0
10
20
30
40
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
Pin (dBm)
0
2
4
6
8
10
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
25
27
29
31
33
35
4.5 5 5.5
Gain
P1dB
Psat
IP3
GAIN (dB), P1dB(dBm), Psat (dBm), IP3(dBm)
Vdd Supply Voltage (Vdc)
Power Dissipation
1
1.5
2
2.5
3
3.5
4
-30 -25 -20 -15 -10 -5 0
9 GHz
9.5 GHz
10 GHz
10.5 GHz
11.0 GHz
11.5 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
4
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Low Gain Mode,
Input Return Loss vs. Temperature
Low Gain Mode,
Output Return Loss vs. Temperature
Low Gain Mode,
Broadband Gain & Return Loss Low Gain Mode, Gain vs. Temperature
-35
-25
-15
-5
5
15
25
7 8 9 10 11 12 13 14
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
14
18
22
26
30
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-24
-20
-16
-12
-8
-4
0
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
9 9.5 10 10.5 11 11.5
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
5
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [2]
HMC608LC4 Alumina, White Gold over Nickel MSL3 [1] H608
XXXX
[1] Max peak reow temperature of 260 °C
[2] 4-Digit lot number XXXX
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) 7 Vdc
Gate Bias Voltage (Vgg) -4.0 to -1.0 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc) +10 d Bm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 22.18 mW/°C above 85 °C) 2 W
Thermal Resistance
(channel to ground paddle) 45 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (Vdc) Idd (mA)
+4.5 300
+5.0 310
+5.5 325
Note: Amplier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 310 mA at +5V.
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
6
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1Vgg
Gate control for amplier. Adjust to achieve Id of 310 mA.
Please follow “MMIC Amplier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF,
1000 pF and 2.2 µF are required.
2, 3, 7 - 12,
16 - 18, 22, 24 N/C No connection required. These pins may be connected to
RF/DC ground without affecting performance.
4, 6, 13, 15 GND Package bottom has an exposed metal paddle that must
also be connected to RF/DC ground.
5RFIN This pin is AC coupled and matched to 50 Ohms.
14 RFOUT This pin is AC coupled and matched to 50 Ohms.
21, 20, 19 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF, 1000pF, and 2.2 µF are required.
23 Vpd
High gain (connect to ground) / low gain mode
pin control (open circuit). External bypass capacitors of
100 pF, 1000 pF and 2.2 µF are required.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
7
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Evaluation PCB
Item Description
J1, J2 PC mount SMA connector
J3 - J8 DC Pin
C1 - C6 100 pF capacitor, 0402 pkg.
C6 - C10 1,000 pF Capacitor, 0603 pkg.
C11 - C15 2.2µF Capacitor, Tantalum
U1 HMC608LC4 Amplier
PCB [2] 112761 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
List of Materials for Evaluation PCB 112763 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
8
HMC608LC4
v03.0514
GaAs pHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
