PDJ-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [ 1200A/1200V, 1in1 ] * * * (USFD) * * (-) Unit in mm 130 110 E 46.75 G E C C 13 30 36 2-M8 19 (8) 37 E G 44 E 130 4-6.5 110 19.5 27.5 2-M4 1300g (TC=25C) DC 1ms DC 1ms (M4/M8) *1 : RMS 360 Arms *2 : 1.18 / 7.35 N*m *3 : 2.45 N*m VCES VGES IC ICP IF IFM PC Tj Tstg Viso V V - N*m A 1200 20 1200 2400 *1 A W C C VRMS 1200 2400 8330 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) 1.37/ 7.84 *3 2.94 *2 (TC=25C) Min. Typ. Max. mA 1.0 VCE=1200V, VGE=0V ICES IGES nA 500 VGE=20V, VCE=0V VCE(sat) V 2.4 3.0 IC=1200A, VGE=15V VGE(TO) V 10 VCE=5V, IC=1200mA Cies nF 108 VCE=10V, VGE=0V, f=1MHz tr 0.6 1.5 VCC=600VIc=1200A *4 ton 0.8 2.1 R G=3.3 s tf 0.2 0.4 Inductive Load VGE=15V toff 1.4 1.8 VFM V 2.5 3.7 IF=1200A, VGE=0V trr 0.5 s IF=1200A, VGE=-10V, di/dt=1200A/s IGBT Rth(j-c) 0.015 - C/W Rth(j-c) 0.035 *4 : RG RG http://store.iiic.cc/ VGE=15V 14V13V12V 2400 2400 2000 11V 1800 1600 Pc=8330W 1400 1200 1000 10V 800 600 11V 1800 Collector Current, Ic (A) Collector Current, Ic (A) 2000 1600 1400 1200 10V 1000 800 600 9V 400 400 9V 200 200 0 0 0 2 4 6 8 10 0 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) 6 4 Ic=2400A Ic=1200A 2 4 6 8 10 TYPICAL 10 Tc=25C 8 2 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL 10 Collector to Emitter Voltage, VCE (V) TYPICAL Tc=125C 2200 2200 Tc=125C 8 6 Ic=2400A 4 Ic=1200A 2 0 0 0 5 10 15 20 0 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage 5 10 15 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL 20 TYPICAL 2400 Vcc=600V Ic =1200A Tc=25C VGE=0V Tc=25C Tc=125C 2200 2000 15 Forward Current, IF (A) Gate to Emitter Voltage, VGE (V) VGE=15V 14V13V12V TYPICAL Tc=25C 10 5 1800 1600 1400 1200 1000 800 600 400 200 0 0 2400 4800 7200 9600 12000 Gate Charge, QG (nC) Gate charge characteristics 0 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDJ-N1200GR12A-0 http://store.iiic.cc/ TYPICAL TYPICAL 1000 Vcc=600V VGE=15V RG=3.3 TC=125C Inductive Load 350 300 Etoff 250 200 150 100 Eton 50 Err Switching Loss, Eton, Etoff, Err (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 400 0 Vcc=600V Etoff VGE=15V Eton IC=1200A TC=125C Inductive Load 100 Err 10 1 0 200 400 600 800 1000 1200 1400 1 100 1 Transient Thermal Impedance, Rth(j-c) (C/W) 10000 Collector Current, Ic (A) 10 Gate Resistance. RG () Switching loss vs. Gate resistance Collector Current. IC (A) Switching loss vs. Collector current VGE=15V RG=3.3 TC125C 1000 100 10 1 0 200 400 600 800 1000 1200 1400 0.1 Diode IGBT 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area PDJ-N1200GR12A-0 http://store.iiic.cc/ http://www.hitachi.co.jp/products/power/ps/ http://store.iiic.cc/