SQJ912AEP
www.vishay.com Vishay Siliconix
S13-2015-Rev. A, 30-Sep-13 2Document Number: 62876
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 40 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 40 V - - 1
μA VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150
On-State Drain Currenta I
D(on) V
GS = 10 V VDS5 V 30 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = 10 V ID = 9.7 A - 0.0077 0.0093
VGS = 4.5 V ID = 8.9 A - 0.0093 0.0111
VGS = 10 V ID = 9.7 A, TJ = 125 °C - - 0.0138
VGS = 10 V ID = 9.7 A, TJ = 175 °C - - 0.0169
Forward Transconductancebgfs VDS = 15 V, ID = 10 A - 58 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = 20 V, f = 1 MHz
- 1438 1835
pF Output Capacitance Coss - 217 271
Reverse Transfer Capacitance Crss -91114
Total Gate ChargecQg
VGS = 10 V VDS = 20 V, ID = 11.3 A
-25.638
nC Gate-Source ChargecQgs -4-
Gate-Drain ChargecQgd -4-
Gate Resistance Rgf = 1 MHz 0.72 1.44 2.2
Turn-On Delay Timectd(on)
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 1
-1015
ns
Rise Timectr -914
Turn-Off Delay Timectd(off) -2335
Fall Timectf -1117
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM --120A
Forward Voltage VSD IF = 6.5 A, VGS = 0 V - 0.8 1.1 V