BFQ67 / BFQ67R / BFQ67W
Document Number 85022
Rev. 1.5, 28-Apr-05
Vishay Semiconductors
www.vishay.com
1
19150
SOT-23
1
23
Electrostatic sensitive device.
Observe precautions for handling.
SOT-23
SOT-323
1
32
1
23
Silicon NPN Planar RF Transistor
Features
Small feedback capacitance
Low noise figure
High transition frequency
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave fre-
quencies.
Mechanical Data
Typ: BFQ67
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: V2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFQ67R
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: R67
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFQ67W
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WV2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 2.5 V
Collector current IC50 mA
Total power dissipation Tamb 60 °C Ptot 200 mW
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
e3
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Document Number 85022
Rev. 1.5, 28-Apr-05
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction ambient 1) RthJA 450 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter cut-off current VCE = 20 V, VBE = 0 ICES 100 μA
Collector-base cut-off current VCB = 15 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0 V(BR)CEO 10 V
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA hFE 65 100 150
Parameter Test condition Symbol Min Typ. Max Unit
Transition frequency VCE = 8 V, IC = 15 mA,
f = 500 MHz
fT7.5 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.4 pF
Collector-emitter capacitance VCE = 8 V, f = 1 MHz Cce 0.2 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.85 pF
Noise figure VCE = 8 V, ZS = ZSopt,
f = 800 MHz, IC = 5 mA
F0.8dB
VCE = 8 V, ZS = ZSopt,
f = 800 MHz, IC = 15 mA
F1.5dB
VCE = 8 V, ZS = 50 Ω, f = 2 GHz,
IC = 5 mA
F2.5dB
VCE = 8 V, ZS = 50 Ω, f = 2 GHz,
IC = 15 mA
F3.0dB
Power gain VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 15 mA, f = 800 MHz
Gpe 15.5 dB
VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 15 mA, f = 2 GHz
Gpe 8dB
Linear output voltage - two tone
intermodulation test
VCE = 8 V, IC = 15 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2160 mV
Third order intercept point VCE = 8 V, IC = 15 mA,
f = 800 MHz
IP326 dBm
BFQ67 / BFQ67R / BFQ67W
Document Number 85022
Rev. 1.5, 28-Apr-05
Vishay Semiconductors
www.vishay.com
3
Common Emitter S-Parameters
Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
5 2 100 0.894 -20.6 6.78 163.0 0.027 77.1 0.967 -8.7
300 0.749 -56.2 5.61 136.2 0.066 59.2 0.834 -20.8
500 0.610 -83.8 4.50 117.7 0.086 50.0 0.716 -25.9
800 0.486 -116.2 3.36 98.8 0.102 46.3 0.623 -28.6
1000 0.445 -132.4 2.87 90.2 0.109 46.9 0.590 -30.1
1200 0.419 -147.3 2.50 81.9 0.115 48.7 0.568 -31.8
1500 0.402 -166.6 2.12 71.7 0.126 53.1 0.546 -35.0
1800 0.403 177.0 1.83 62.8 0.142 58.1 0.531 -38.8
2000 0.411 167.0 1.69 58.0 0.156 60.8 0.524 -41.9
2200 0.423 158.5 1.59 53.0 0.173 63.2 0.516 -45.1
2500 0.445 146.1 1.45 45.8 0.202 65.2 0.511 -51.7
2800 0.464 137.1 1.34 39.1 0.232 65.5 0.490 -59.1
3000 0.490 130.5 1.27 34.7 0.255 64.7 0.471 -64.8
5 5 100 0.760 -32.1 14.10 154.1 0.024 72.7 0.912 -15.2
300 0.522 -79.0 9.62 121.5 0.052 58.5 0.663 -27.9
500 0.390 -108.5 6.72 104.7 0.067 57.0 0.538 -28.1
800 0.311 -139.1 4.56 89.9 0.088 60.0 0.473 -26.3
1000 0.292 -153.5 3.77 83.1 0.103 62.1 0.459 -26.4
1200 0.282 -166.5 3.21 76.7 0.119 63.6 0.450 -27.4
1500 0.287 178.0 2.67 68.3 0.143 64.7 0.438 -30.4
1800 0.298 164.0 2.29 60.9 0.169 65.5 0.428 -34.2
2000 0.313 157.1 2.10 56.6 0.189 65.2 0.423 -37.1
2200 0.328 149.6 1.96 52.5 0.209 64.8 0.415 -40.2
2500 0.353 140.6 1.79 46.4 0.239 63.5 0.406 -46.8
2800 0.379 133.2 1.65 39.4 0.267 61.5 0.380 -53.8
3000 0.400 127.4 1.55 35.4 0.286 59.8 0.358 -58.9
5 10 100 0.594 -46.3 22.01 144.4 0.021 69.8 0.829 -21.7
300 0.346 -101.6 12.12 110.8 0.043 63.5 0.524 -29.9
500 0.264 -130.9 7.86 97.1 0.060 66.0 0.431 -25.7
800 0.230 -158.2 5.13 85.1 0.088 69.0 0.399 -21.9
1000 0.224 -169.5 4.21 79.5 0.107 69.7 0.396 -21.8
1200 0.225 179.8 3.56 73.9 0.126 69.6 0.393 -23.3
1500 0.235 166.8 2.94 66.8 0.154 68.6 0.387 -26.6
1800 0.251 156.9 2.51 59.9 0.184 67.6 0.379 -30.7
2000 0.270 150.2 2.30 56.0 0.206 66.2 0.374 -33.7
2200 0.287 144.1 2.14 52.1 0.226 65.1 0.366 -36.9
2500 0.310 136.4 1.95 46.2 0.256 62.6 0.354 -43.6
2800 0.342 131.0 1.79 39.9 0.284 60.1 0.325 -50.5
3000 0.362 125.6 1.68 35.9 0.302 57.8 0.301 -55.3
5 15 100 0.477 -56.7 26.58 138.3 0.019 69.7 0.7681 -25.3
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Document Number 85022
Rev. 1.5, 28-Apr-05
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
300 0.276 -116.4 13.06 106.1 0.039 67.8 0.4623 -29.2
500 0.221 -144.4 8.25 94.0 0.059 70.9 0.3912 -23.1
800 0.208 -169.5 5.34 83.2 0.088 72.5 0.3733 -19.1
1000 0.206 -177.8 4.35 78.0 0.109 72.3 0.3734 -19.4
1200 0.208 172.5 3.68 72.8 0.129 71.6 0.3736 -21.1
1500 0.221 162.5 3.03 65.9 0.159 69.9 0.3686 -24.7
1800 0.237 154.0 2.58 59.3 0.190 68.2 0.3619 -29.0
2000 0.257 147.5 2.37 55.7 0.212 66.7 0.3561 -32.1
2200 0.280 142.4 2.21 52.1 0.232 65.2 0.3474 -35.4
2500 0.303 135.4 2.01 46.1 0.262 62.4 0.3343 -42.2
2800 0.329 130.0 1.85 39.7 0.290 59.5 0.3053 -49.1
3000 0.357 124.8 1.73 36.0 0.308 57.1 0.2807 -53.7
5 20 100 0.397 -66.0 29.45 134.1 0.017 69.8 0.722 -27.5
300 0.240 -128.2 13.50 103.4 0.038 71.1 0.427 -28.1
500 0.205 -153.8 8.43 92.3 0.058 73.5 0.370 -21.0
800 0.199 -175.5 5.43 82.0 0.089 74.3 0.360 -17.3
1000 0.195 176.6 4.42 77.1 0.110 73.8 0.362 -17.7
1200 0.202 168.2 3.73 72.0 0.131 72.5 0.363 -19.7
1500 0.219 159.0 3.08 65.5 0.162 70.5 0.359 -23.6
1800 0.235 151.5 2.62 59.0 0.193 68.6 0.352 -28.0
2000 0.252 145.7 2.40 55.2 0.215 66.8 0.346 -31.1
2200 0.274 140.0 2.24 51.6 0.235 65.3 0.338 -34.5
2500 0.300 134.2 2.03 46.0 0.265 62.4 0.325 -41.1
2800 0.326 129.2 1.87 39.6 0.293 59.4 0.295 -48.3
3000 0.357 124.8 1.76 35.8 0.311 57.0 0.270 -52.9
5 30 100 0.301 -82.0 32.38 128.8 0.016 71.9 0.662 -29.4
300 0.219 -143.6 13.79 100.3 0.036 74.7 0.393 -25.7
500 0.201 -165.8 8.52 90.3 0.057 76.5 0.352 -18.3
800 0.198 176.3 5.46 80.6 0.090 76.1 0.350 -15.2
1000 0.201 170.4 4.43 75.9 0.111 75.2 0.354 -16.0
1200 0.204 163.8 3.75 71.1 0.133 73.5 0.356 -18.2
1500 0.222 156.2 3.09 64.5 0.164 71.3 0.353 -22.3
1800 0.242 149.4 2.62 58.1 0.195 69.2 0.346 -26.9
2000 0.263 144.6 2.40 54.4 0.216 67.3 0.340 -30.2
2200 0.279 139.7 2.24 50.9 0.238 65.6 0.332 -33.6
2500 0.308 133.6 2.03 45.0 0.267 62.4 0.318 -40.7
2800 0.336 128.8 1.86 39.2 0.295 59.4 0.288 -47.6
3000 0.365 124.1 1.75 35.0 0.313 56.8 0.264 -52.1
8 2 100 0.900 -19.9 6.84 163.2 0.026 76.9 0.967 -8.4
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
BFQ67 / BFQ67R / BFQ67W
Document Number 85022
Rev. 1.5, 28-Apr-05
Vishay Semiconductors
www.vishay.com
5
300 0.751 -54.9 5.70 136.6 0.063 59.9 0.838 -20.1
500 0.615 -82.0 4.59 118.3 0.083 50.7 0.724 -25.0
800 0.480 -113.9 3.43 99.5 0.098 47.1 0.632 -27.6
1000 0.440 -130.1 2.94 90.8 0.105 47.8 0.601 -29.0
1200 0.408 -145.1 2.55 82.7 0.112 49.8 0.579 -30.8
1500 0.391 -164.8 2.16 72.4 0.123 54.2 0.556 -33.8
1800 0.390 178.5 1.87 63.5 0.138 59.0 0.544 -37.6
2000 0.398 168.6 1.73 58.4 0.153 61.7 0.536 -40.4
2200 0.407 159.6 1.62 54.0 0.169 64.2 0.529 -43.5
2500 0.429 147.7 1.48 46.7 0.198 65.9 0.523 -49.7
2800 0.454 138.6 1.37 39.9 0.226 66.3 0.502 -56.8
3000 0.474 131.5 1.29 35.2 0.249 65.3 0.482 -62.1
8 5 100 0.777 -30.5 14.06 154.7 0.023 73.1 0.916 -14.5
300 0.532 -76.2 9.71 122.4 0.050 58.9 0.675 -26.7
500 0.391 -104.5 6.82 105.5 0.065 57.3 0.552 -27.2
800 0.306 -135.8 4.64 90.5 0.086 60.4 0.489 -25.3
1000 0.283 -149.1 3.84 83.7 0.101 62.3 0.473 -25.5
1200 0.268 -163.0 3.27 77.3 0.116 63.8 0.466 -26.5
1500 0.271 -180.0 2.72 69.1 0.139 65.1 0.454 -29.4
1800 0.281 166.6 2.33 61.5 0.165 65.9 0.445 -33.0
2000 0.298 158.8 2.14 57.3 0.184 65.6 0.440 -35.7
2200 0.312 151.8 2.00 53.2 0.204 65.3 0.432 -38.8
2500 0.339 142.4 1.82 46.8 0.232 64.1 0.424 -45.0
2800 0.369 134.7 1.68 40.1 0.260 62.2 0.397 -51.6
3000 0.388 128.9 1.57 35.8 0.278 60.2 0.373 -56.0
8 10 100 0.618 -43.7 21.93 145.3 0.020 70.6 0.837 -20.6
300 0.356 -96.4 12.30 111.7 0.042 63.6 0.542 -28.7
500 0.262 -125.0 8.01 97.8 0.059 66.0 0.448 -24.9
800 0.218 -153.5 5.24 85.6 0.086 68.9 0.417 -21.1
1000 0.211 -164.9 4.28 80.1 0.104 69.7 0.413 -21.1
1200 0.205 -175.7 3.63 74.6 0.123 69.6 0.411 -22.5
1500 0.219 170.4 3.00 67.4 0.150 68.8 0.404 -25.9
1800 0.235 158.9 2.56 60.5 0.180 67.8 0.398 -29.7
2000 0.249 152.1 2.34 56.8 0.200 66.6 0.392 -32.5
2200 0.268 145.5 2.19 52.8 0.221 65.4 0.384 -35.6
2500 0.294 138.8 1.99 46.9 0.250 63.1 0.373 -42.0
2800 0.322 132.3 1.83 40.4 0.276 60.4 0.343 -48.4
3000 0.352 126.8 1.72 36.3 0.294 58.0 0.316 -52.2
8 15 100 0.512 -52.8 26.62 139.4 0.019 70.3 0.780 -24.0
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
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Document Number 85022
Rev. 1.5, 28-Apr-05
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300 0.279 -109.2 13.28 106.8 0.039 67.4 0.480 -28.0
500 0.215 -137.0 8.43 94.6 0.057 70.3 0.408 -22.1
800 0.191 -164.4 5.46 83.6 0.086 72.1 0.391 -18.5
1000 0.186 -173.2 4.44 78.5 0.107 72.1 0.391 -18.9
1200 0.189 177.0 3.76 73.4 0.126 71.5 0.392 -20.4
1500 0.203 164.6 3.10 66.6 0.155 69.8 0.386 -24.0
1800 0.219 155.3 2.65 60.1 0.185 68.4 0.380 -28.1
2000 0.238 148.9 2.42 56.1 0.206 66.9 0.374 -31.0
2200 0.252 143.5 2.26 52.6 0.226 65.5 0.367 -34.1
2500 0.282 136.5 2.05 46.8 0.256 62.9 0.355 -40.7
2800 0.312 130.7 1.88 40.7 0.282 60.2 0.325 -47.2
3000 0.335 126.0 1.77 36.7 0.300 57.8 0.302 -51.4
8 20 100 0.436 -60.6 29.61 135.1 0.017 69.8 0.735 -26.1
300 0.239 -118.9 13.78 104.1 0.037 70.4 0.444 -26.9
500 0.192 -147.0 8.62 92.8 0.057 72.9 0.387 -20.3
800 0.178 -170.5 5.55 82.5 0.087 73.8 0.378 -16.7
1000 0.177 -179.4 4.51 77.5 0.108 73.4 0.380 -17.2
1200 0.176 172.3 3.82 72.6 0.128 72.4 0.382 -19.2
1500 0.195 161.7 3.15 66.0 0.157 70.6 0.378 -22.9
1800 0.214 153.4 2.69 59.6 0.188 68.8 0.371 -27.2
2000 0.229 148.2 2.45 56.1 0.209 67.2 0.366 -30.1
2200 0.251 142.5 2.28 52.4 0.230 65.6 0.358 -33.4
2500 0.275 135.6 2.08 46.5 0.258 62.8 0.345 -40.0
2800 0.304 130.5 1.91 40.7 0.286 59.9 0.316 -46.5
3000 0.333 125.8 1.79 36.4 0.303 57.6 0.292 -50.8
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
Figure 1. Total Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
96 12159
P-Total Power Dissipation ( mW )
tot
T
amb
- Ambient Temperature ( °C)
Figure 2. Transition Frequency vs. Collector Current
0
2000
4000
6000
8000
10000
01020304050
I
C
Collector Current ( mA )
12867
f Transition Frequency ( MHz )
T
V
CE
=8V
f = 500 MHz
BFQ67 / BFQ67R / BFQ67W
Document Number 85022
Rev. 1.5, 28-Apr-05
Vishay Semiconductors
www.vishay.com
7
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
Figure 4. Noise Figure vs. Collector Current
0.0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
V
CB
Collector Base Voltage(V)
12884
C Collector Base Capacitance ( pF )
cb
f=1MHz
0
1
2
3
4
5
0 5 10 15 20 25
I
C
Collector Current ( mA )
12869
F Noise Figure ( dB )
f = 800 MHz
f=2GHz
V
CE
=8V
Z
S
=50
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8
Document Number 85022
Rev. 1.5, 28-Apr-05
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE = 8 V, IC = 15 mA, Z0 = 50 Ω
S11
S12
S21
S22
Figure 5. Input Reflection Coefficient
Figure 6. Reverse Transmission Coefficient
12998
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
ı
0.2 1 2 5
3.0 GHz
1.0
0.1
0.3
2.0
12999
90 °
180 °
–90 °
0.2 0.4
–150 °
–120 ° –60 °
–30 °
120 °
150 °
60 °
30 °
3.0 GHz
1.0
0.1
2.0
Figure 7. Forward Transmission Coefficient
Figure 8. Output Reflection Coefficient
13000
90 °
180 °
–90 °
20 40
–150 °
–120° –60°
–30 °
120 °
150 °
60 °
30 °
3.0 GHz
1.0
0.1
0.3
13501
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
0.2 0.5 1 5
3.0 GHz 1.0
0.8
BFQ67 / BFQ67R / BFQ67W
Document Number 85022
Rev. 1.5, 28-Apr-05
Vishay Semiconductors
www.vishay.com
9
Package Dimensions in mm (Inches)
Package Dimensions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
EB
C
9511347
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
BE
C
9511346
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
www.vishay.com
10
Document Number 85022
Rev. 1.5, 28-Apr-05
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12236
0.9 (0.035)
0.39 (0.015)
Mounting Pad Layout
0.95 (0.37) 0.95 (0.037)
2.0 (0.079)
1.00 (0.039)
10
0.10 (0.004) 0.10 (0.004)
2.05 (0.080)
2.00 (0.078)
1.25 (0.049)
0.30 (0.012)
1.3 (0.051)
S
O
M
e
t
h
o
d
BFQ67 / BFQ67R / BFQ67W
Document Number 85022
Rev. 1.5, 28-Apr-05
Vishay Semiconductors
www.vishay.com
11
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.