Infineon fechnologies BUZ 101SL SIPMOS Power Transistor Features Product Summary e N channe! Drain source voltage Vps 55 |V Enhancement mode Drain-Source on-state resistance | Apsyony| 9-04 | Q Avalanche rated Continuous drain current Ib 20 {A e Logic Level e dv/di rated e 175C operating temperature YPTOS164 Type Package Ordering Code Packaging Pin 1 | Pin 2 | Pin3 BUZ101SL P-T0220-3-1 | Q67040-S4012-A2 | Tube G D $s BUZ101SL E3045A | P-TO263-3-2| Q67040-S4012-A6 | Tape and Reel BUZ101SL E3045 P-TO263-3-2 | Q67040-S4012-A5 | Tube Maximum Ratings, at 7, = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current Ip A To = 25C 20 Te = 100 C 14 Pulsed drain current [Dpulse 80 To = 25C Avalanche energy, single pulse Eas 90 mJ Ip = 20 A, Vop = 25 V, Ags = 252 Avalanche energy, periodic limited by Tmax Ear 5.5 Reverse diode dwdt dwdt 6 kV/us' lg = 20 A, Vos = 40 V, di/dt = 200 A/us, Timax = 175 C Gate source voltage Ves +20 Vv Power dissipation Prot 55 WwW To = 25C Operating and storage temperature 7, Tstg -55.,. +175 Cc IEC climatic category; DIN IEC 68-1 55/175/56 Mm 6235505 0133376 363 Data Book 654 06.99Infineon technologies BUZ 101SL Thermal Characteristics Parameter Symbol Values Unit min, | typ. | max. Characteristics Thermal resistance, junction - case Rinic of : 2.7 | KW Thermal resistance, junction - ambient, leded Pua - - 62 SMD version, device on PCB: Riga @ min. footprint - - 62 @ 6 cm? cooling area!) - - 40 Electrical Characteristics, at 7; = 25 C, unless otherwise specified Parameter Symbol Values Unit min. | typ. max. Static Characteristics Drain- source breakdown voltage Vierypss| 55 - - |v Vag = 9 V, Ip = 0.25 mA Gate threshold voltage, Vag = Vos Vasith) 1.2 1.6 2 lp = 40 pA Zero gate voltage drain current lpss HA Vos = 50 V, Veg = OV, T7= 25C - 0.1 1 Vos = 50 V, Vas = OV, Tj = 150C - - 100 Gate-source leakage current less : 10 100 jnA Veg = 20 V, Vos =0V Drain-Source on-state resistance Rosion) Q Vas=4.5V, bp =14A . + 0.057 | 0.07 Vag=10V, Ip=14A - | 0.034 | 0.04 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. M@@ 6235605 0133377 cTT Data Book 655 06.99( Infineon technologies Electrical Characteristics, at J, = 25 C, unless otherwise specified BUZ 101SL Parameter Symbol! Values min. | typ. | max. Unit Dynamic Characteristics Transconductance Vps22"!lp* Ros(on)max Ips 14A Its 7 14 Input capacitance Vas =0 V, Vog = 25 V, f= 1 MHz Ciss - 560 700 Output capacitance Veg = 0 V, Vpg = 25 V, f= 1 MHz Coss - 170 215 Reverse transfer capacitance Vas = 9 V, Vog = 25 V, f= 1 MHz Ciss 120 pF Turn-on delay time Vop = 30 V, Vag = 4.5 V, Ip = 20A, Rg=102 fg(on) 25 Rise time Vop = 30 V, Veg = 4.5 V, Ip = 20A, Rg =10Q 55 Turn-off delay time Vop = 30 V, Vag = 4.5 V, Ip = 20 A, Ag=102 ta(off) 25 Fall time Vop = 30 V, Vag = 4.5 V, Ip = 220A, Rg =102 h 25 ns mM 8235605 Data Book 0133378 136 656 06.99C Infineon BUZ 101SL technologies Electrical Characteristics, at 7 = 25 "C, unless otherwise specified Parameter Symbol Values Unit min. | typ. max. Dynamic Characteristics Gate to source charge Qgs - 3 4.5 |nc Vop = 40 V, Ip=20A Gate to drain charge Qgq - 10 15 Vop = 40 V, Ip =20A Gate charge total Qg - 24 36 Vop = 40 V, Ip =20A, Vag = 0 to 10 V Gate plateau voltage Viplateauy| 4,06 - [Vv Vop = 40 V, Ip =20A Reverse Diode Inverse diode continuous forward current Ig - - 20 IA To = 25C Inverse diode direct current,pulsed Ism : - 80 To = 25C Inverse diode forward voltage Vep - 1.12 | 18 |V Vas =O0V, lp=40A Reverse recovery time be - 50 75 |ns Vp = 30 V, Ie=ls , d/dt = 100 A/us Reverse recovery charge On - 0.12 | 0.18 |pC Vp = 30 V, Ie=ig , dig/dt = 100 A/us MB 6235605 0133379 O72 oe Data Book 657 06.99( Infineon technologies Power Dissipation Prt = (To) BUZ101SL 60 Ww 50 45 40 Prot 36 30 26 20 % 20 40 60 80 100 120 140 16C 190 _ Te Safe operating area Ip=f(Vps) parameter: D=0, Te = 25C 49 2 ouziorst = 28 Ops 10 10 10 10? *, Vos Data Book BUZ 101SL Drain current p= f(T) parameter: Vgg5 210 V BUZIO1SL 22 % 20 40 60 80 100 120 140 16C 190 , Tc Transient thermal impedance 4c = f(b) parameter : D = 6/T to 1 Buzierst Ha 1o 10% 4 M@@ 8235605 0133380 654 meInfineon technologies BUZ 101SL Typ. output characteristics Ip =f (Vps) parameter: f = 80 ys 0 BUZ1IOISL 40 35 2 30 25 1 20 18 10 6 %o 05 10 15 20 25 30 35 40 V 50 Vos Typ. transfer characteristics /p= f (Vas) parameter: f = 80 ys Vos 2 2 X Ip X Apsyonymax 50 Ip 30 t / | | 1 2 3 4 v 6 > Ves Data Book Typ. drain-source-on-resistance Fipsion) = f (ip) parameter: Vas BUZ101SL 024 Q 020 0 18 016 Rosion) 0.14 0.12 0.10 a 9.08 0.06 0.04 0.02 boc d eo f g kh i j kil 3035 406 45 50 55 60 65 70 &0 100 000, 4 8 12 16 20 24 28 A 36 Typ. forward transconductance Gs = Kp), 7) = 25C parameter: G5 20 | S$ pn | a a4 & 10 fs 5 0 0 5 10 15 20 A 30 I MB 4235605 0133341 ?cOaa Infineon technologies BUZ 101SL Drain-source on-resistance Fos(ony = f(T) parameter : Ip = 14 A, Vag =4.5V BUZTOTSL 0.26 Q 0.22 020 0.18 0.16 Rosv(on) 0.14 0.12 0.10 0.08 0.06 004 002 0.09 -20 20 60 100 . fT, 140 "C 200 Typ. capacitances C =f (Vps) parameter: Veg =0 V, f= 1 MHz 104 pF Q 10 20 v 40 * Vos Data Book 660 Gate threshold voltage Vascthy = f(7) parameter : Vag = Vos, ip = 40 LA 30 v 24h, 22|-7 20 18 16), 14 | 1.2 10 V@Sith) 08 0.6 04 a2 0.060 -20 20 60 100 7 140 C 200 Forward characteristics of reverse diode Ie = f(Vgp) parameter: 7) , & = 80 ps 102 BUZ101SL 7,=25 C typ T,= 175 C typ T, = 25C (98%) T,= 175 C (98%) 00 04 O08 12 16 20 24 V 30 Vsp 06.99 MM 4235605 01333462 &b7( Infineon technologies Avalanche Energy Eas = f(7)) parameter: Ip = 20 A, Vop = 25 V Reg = 282 - Eas 100 mJ 80 70 60 50 40 30 20 10 0 40 60 2&0 100 120 140 C Tj 180 Drain-source breakdown voltage Verypss = f(T) Vieryoss __~ Data Book BUz101St 66 V *%0 -20 20 60 100 140 "GC 200 661 BUZ 101SL Typ. gate charge Vas = f (Qaate) parameter: /p puis = 20 A BUZIO1SL 16 V 12 10 Ves 12 16 20 24 2B pC 36 > cate 06.99 MH 6235605 0133383 ST3Infineon technologies Gehausemabbilder Package Outlines GehadusemaBbilder Package Outlines (MaBe in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) P-DSO-6-6/-7 Gewicht etwa 0.1 5g 0:88 2008 x45" Approx. weight 0.15 g a . 02 z723 TT] =| Bo | es 214i a 2) nt Le rn. Op aa |! q ine 4 12 LU : | 0.64 10.25 8x | ae oe 4 A ! 6102 . 1 8 5 5 92 af 4 toon > Index Marking (Chamfer) 1) Does not include plastic or metal protrusion of 0.15 max. per side Bild 16 P-TO218-AA (P-TO218-2-1) Gewicht etwa 4.9 g Approx. weight 4.9 g yt Figure 16 15202 49 28M 13 |] 43 50's 2.5203 0.4 A 1) Punch direction, burr max. 0.04 2) Dip tinning 3) Max. 15.5 by dip tinning press burr max. 0.05 radii not dimensioned max, 0.2 GPT0S156 Bild 17 Data Book 1 Mi 4235605 Figure 17 055 06.99 0133774 1145- Infineon technologies Gehause maBbilder Package Outlines P-TO220-3-1 Gewicht etwa 1.8 g 10302 Approx. weight 1.8 g a a 44 4.27201 e 3 0.50.1 .) Typical All metal surfaces tin plated, except area of cut. GPTOS1S5 Bild 18 Figure 18 P-TO251-3-1 Gewicht etwa 2.0 g Approx. weight 2.0 g esis ats +9010 _[0.9%868 q 3x 0.75201 0.57088 456 GPTO9050 All metal surfaces tin plated, except area of cut. Bild 19 Data Book Figure 19 1056 MB 6235605 03433775 O50Infineon technologies GehausemaBbilder Package Outlines P-TO252-3-1. Gewicht etwa 0.38 g Approx. weight 0.38 g 101s 65-0346 2 3100s >A] _, | B4sot | 0.9808 : it q Rn L 2 s} ty = , J in 1 (| 0.15 max 3x s 0...0.15 per side 0.75 20.1 0.5 #008 1201 4.57 $10.25 @IAIB] fe] 0.1] All metal surfaces tin plated, except area of cut. GPT09051 Bild 20 Figure 20 P-T0262-3-1/P?PAK Ax04 | 3 rs 0.50.1 ") Typical Metal surface min. X = 7.25, = 7,35 All metal surfaces tin plated, except area of cut. GPTog244 Bild 21 Figure 21 Data Book 1057 06.99 @@ 8235605 0133776 11?Infineon GehausemaBbilder technologies Package Outlines P-T0263-3-2/DPAK Gewicht etwa 1.38 g 10202 44 Approx. weight 1.38 g 4.27401 " 24 f pe 015201 es max} [5.08] 1} Typical All metal surfaces tin plated, except area of cut. GPTo908S Bild 22 Figure 22 SOT-23 (P-SQT23-3-1) Gewicht etwa 0.01 9 Approx. weight 0.01 g 1.14max | 29201 0.1 max ~ at +02 * py ; -1- ace. to E ty | DINems 6B Bo _ Wy ab = {2 0.4530 j 0.08.0 15 0.95 . 2... 30 [0.25 @B/C| =10.20 @IAl GPS0S5S7 Bild 23 Figure 23 Data Book 1058 06.99 @ 8235605 0133777 12e3Infineon GehadusemaBbilder lechnologies Package Outlines SOT-89. Gewicht etwa 0.01 g Approx. weight 0.01 g ace. to 5 DIN 6784 D G D 0.25 min GPS05558 Bild 24 Figure 24 SOT-223 (P:SOT223-4-1) Gewicht etwa 0.15 g Approx. weight 0.15 g 6.5102 1.60.1 ais 3201 0.1 max -_ (eB) tL ee ie Yt a PX Is | oO ET aT of i, 07:01 [2.3] 0.28.04 10.25 @A] =10.25 @[8] GPS05560 Bild 25 Figure 25 Data Book 1059 06.99 M@@ 6235605 0133778 S&TGehausemaBbilder ( Infineon technologies Package Outlines TO-92 Gewicht etwa 0.23 g Approx. weight 0.23 g 1 2 3 Hil = i~ 4202 . 34 e w 2 a ~ 4 _ { 9.4 GPT05158 Bild 26 Figure 26 TO-92-E6288 Gewicht etwa 0.23 g Approx. weight 0.23 g \ 2 8 af chy = 4 5.2 92 4.292 x _ 4 x a 2 3 ' 3 2, = 0.4% GPT05548 Bild 27 Figure 27 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Data Book 1060 06.99 MH 8235605 0133779 ?Tb =