© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 1
1Publication Order Number:
NL17SH32/D
NL17SH32
Single 2-Input OR Gate
The NL17SH32 is an advanced high speed CMOS 2−input OR gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The NL17SH32 input structure provides protection when voltages
up to 7 V are applied, regardless of the supply voltage. This allows the
NL17SH32 to be used to interface 5 V circuits to 3 V circuits.
Features
•High Speed: tPD = 3.7 ns (Typ) at VCC = 5 V
•Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
•Power Down Protection Provided on Inputs
•Balanced Propagation Delays
•Pin and Function Compatible with Other Standard Logic Families
•These are Pb−Free Devices
Figure 1. Pinout (Top View)
VCC
IN B
IN A
OUT Y
GND
IN A
IN B OUT Y
≥ 1
Figure 2. Logic Symbol
1
2
34
5
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ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
L
H
H
H
Y
PIN ASSIGNMENT
1
2
3IN B
IN A
GND
4
5V
CC
OUT Y
MARKING
DIAGRAM
SOT−953
CASE 527AE
F = Specific Device Code
M = Month Code
FM
1
NL17SH32
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage −0.5 to +7.0 V
VIN DC Input Voltage −0.5 to +7.0 V
VOUT DC Output Voltage −0.5 to VCC +0.5 V
IIK DC Input Diode Current −20 mA
IOK DC Output Diode Current ±20 mA
IOUT DC Output Sink Current ±25 mA
ICC DC Supply Current per Supply Pin 50 mA
TSTG Storage Temperature Range −65 to +150 °C
TLLead Temperature, 1 mm from Case for 10 Seconds 260 °C
TJJunction Temperature Under Bias +150 °C
PDPower Dissipation in Still Air 50 mW
MSL Moisture Sensitivity Level 1
FRFlammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 1) ±100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
VCC DC Supply Voltage 2.0 5.5 V
VIN DC Input Voltage 0.0 5.5 V
VOUT DC Output Voltage 0.0 VCC V
TAOperating Temperature Range −55 +125 °C
tr , tfInput Rise and Fall Time VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °CTime, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100 1000
TIME, YEARS
NORMALIZED FAILURE RATE
TJ= 80 C°
TJ= 90 C°
TJ= 100 C°
TJ= 110 C°
TJ= 130 C°
TJ= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time
Junction Temperature
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
VCC
(V)
TA = 255C TA v 855C*555C to 1255C
Unit
Min Typ Max Min Max Min Max
VIH Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
VIL Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
VOH Minimum High−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = *50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
VIN = VIH or VIL
IOH = *4 mA
IOH = *8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
VOL Maximum Low−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
IIN Maximum Input
Leakage Current
VIN = 5.5 V or GND 0 to
5.5
$0.1 $1.0 $1.0 mA
ICC Maximum Quiescent
Supply Current
VIN = VCC or GND 5.5 1.0 10 40 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Parameter
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Test Conditions
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
TA = 25°C
ÎÎÎÎ
ÎÎÎÎ
TA ≤ 85°C
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
−55 ≤ TA ≤ 125°C
ÎÎ
ÎÎ
ÎÎ
Unit
ÎÎÎ
ÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Typ
ÎÎÎ
ÎÎÎ
Max
ÎÎ
ÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
tPLH,
tPHL
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Propagation
Delay,
Input A or B to Y
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
4.8
6.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
7.9
11.4
ÎÎ
ÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
9.5
13.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
11.5
15.5
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ns
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.7
4.4
ÎÎÎ
ÎÎÎ
5.5
7.5
ÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
6.5
8.5
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
8.0
10.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
CIN
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Input
Capacitance
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
5.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
10
ÎÎ
ÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
10
ÎÎ
ÎÎ
ÎÎ
pF
CPD Power Dissipation Capacitance (Note 2)
Typical @ 25°C, VCC = 5.0 V
pF
11
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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4
Figure 4. Switching Waveforms
Figure 5. Test Circuit
GND
50%
50% VCC
Input A or B
Output Y
tPHL
tPLH
50% VCC
VOL
VOH
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended
for propagation delay tests.
CL*
INPUT
VCC
OUTPUT
ORDERING INFORMATION
Device Package Shipping†
NL17SH32P5T5G SOT−953
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NL17SH32
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5
PACKAGE DIMENSIONS
SOT−953
CASE 527AE
ISSUE E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
E
D
C
A
HE
123
45
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.37 0.40
b0.10 0.15 0.20
C0.07 0.12 0.17
D0.95 1.00 1.05
E0.75 0.80 0.85
e0.35 BSC
L
0.95 1.00 1.05
HE
X
Y
PIN ONE
INDICATOR
b
5X
X0.08 Y
L
5X
L3
L2
e
5X
5X
L2 0.05 0.10 0.15
L3 −−− −−− 0.15
0.175 REF
TOP VIEW
SIDE VIEW
BOTTOM VIEW 1.20
DIMENSIONS: MILLIMETERS
0.20
5X
1
PACKAGE
OUTLINE
0.35
PITCH
0.35
5X
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NL17SH32/D
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