BCW60, BCX70 NPN Silicon AF Transistors * For AF input stages and driver applications 2 3 * High current gain 1 * Low collector-emitter saturation voltage * Low noise between 30 Hz and 15 kHz * Complementary types: BCW61, BCX71 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration BCW60B ABs 1=B 2=E 3=C SOT23 BCW60C ACs 1=B 2=E 3=C SOT23 BCW60D ADs 1=B 2=E 3=C SOT23 BCW60FF AFs 1=B 2=E 3=C SOT23 BCX70G AGs 1=B 2=E 3=C SOT23 BCX70H AHs 1=B 2=E 3=C SOT23 BCX70J AJs 1=B 2=E 3=C SOT23 BCX70K AKs 1=B 2=E 3=C SOT23 1 Package 2011-08-16 BCW60, BCX70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCW60, ...60FF 32 BCX70 45 Collector-base voltage Unit VCBO BCW60, ...60FF 32 BCX70 45 6 Emitter-base voltage VEBO Collector current IC 100 Peak collector current, tp 10 ms ICM 200 Peak base current IBM 200 Total power dissipation Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Symbol Value RthJS 240 mA TS 71 C Junction - soldering point1) -65 ... 150 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-08-16 BCW60, BCX70 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCW60, ...60FF 32 - - IC = 10 mA, IB = 0 , BCX70 45 - - IC = 10 A, IE = 0 , BCW60, ...60FF 32 - - IC = 10 A, IE = 0 , BCX70 45 - - 6 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 1 A, IC = 0 Collector-base cutoff current A ICBO VCB = 32 V, IE = 0 , BCW60, ...60FF - - 0.02 VCB = 45 V, IE = 0 , BCX70 - - 0.02 VCB = 32 V, IE = 0 , TA = 150 C, BCW60, ...60FF - - 20 VCB = 45 V, IE = 0 , TA = 150 C, BCX70 - - 20 - - 20 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain- - hFE IC = 10 A, VCE = 5 V, hFE-grp. G 20 140 - IC = 10 A, VCE = 5 V, hFE-grp. B/ H 20 200 - IC = 10 A, VCE = 5 V, hFE-grp. C/ J/ FF 40 300 - IC = 10 A, VCE = 5 V, hFE-grp. D/ K 100 460 - IC = 2 mA, VCE = 5 V, hFE-grp. G 120 170 220 IC = 2 mA, VCE = 5 V, hFE-grp. B/ H 180 250 310 IC = 2 mA, VCE = 5 V, hFE-grp. C/ J/ FF 250 350 460 IC = 2 mA, VCE = 5 V, hFE-grp. D/ K 380 500 630 IC = 50 mA, VCE = 1 V, hFE-grp. G 50 - - IC = 50 mA, VCE = 1 V, hFE-grp. B/ H 70 - - IC = 50 mA, VCE = 1 V, hFE-grp. C/ J/ FF 90 - - IC = 50 mA, VCE = 1 V, hFE-grp. D/ K 100 - - 3 2011-08-16 BCW60, BCX70 DC Electrical Characteristics Parameter Symbol Values min. typ. Unit max. Characteristics Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 0.25 mA - 0.12 0.25 IC = 50 mA, IB = 1.25 mA - 0.2 0.55 IC = 10 mA, IB = 0.25 mA - 0.7 0.85 IC = 50 mA, IB = 1.25 mA - 0.83 1.05 IC = 10 A, VCE = 5 V - 0.52 - IC = 2 mA, VCE = 5 V 0.58 0.65 0.7 IC = 50 mA, VCE = 1 V - 0.78 - Base emitter saturation voltage1) VBEsat Base-emitter voltage1) 1Pulse VBE(ON) test: t < 300s; D < 2% 4 2011-08-16 BCW60, BCX70 AC Characteristics Transition frequency fT - 250 - MHz Ccb - 0.95 - pF Ceb - 9 - IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance k h11e IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G - 2.7 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H - 3.6 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J /FF - 4.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K - 7.5 - Open-circuit reverse voltage transf. ratio 10 -4 h12e IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G - 1.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B /H - 2 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF - 2 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K - 3 - Short-circuit forward current transf. ratio - h21e IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G - 200 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H - 260 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF - 330 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K - 520 - Open-circuit output admittance S h22e IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G - 18 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H - 24 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF - 30 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K - 50 - Noise figure dB F IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, hFE-grp. B - K - 2 - - 1 2 - - IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, hFE-grp. FF Equivalent noise voltage Vn 0.135 V IC = 200 A, VCE = 5 V, RS = 2 k, f = 10...50 Hz , h FE-grp. FF 5 2011-08-16 BCW60, BCX70 DC current gain hFE = (IC) VCE = 5 V 10 3 h FE Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 BCW 60/BCX 70 5 EHP00334 10 2 C 100 C BCW 60/BCX 70 EHP00332 mA 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 10 -1 10 0 10 1 10 -1 0 mA 10 2 0.1 0.2 0.3 C Collector current IC = (VBE ) IC = (VBEsat), hFE = 40 VCE = 5V C BCW 60/BCX 70 EHP00331 mA 10 2 C 100 C 25 C -50 C 10 1 V 0.5 V CEsat Base-emitter saturation voltage 10 2 0.4 BCW 60/BCX 70 EHP00333 mA 10 1 5 5 10 0 5 10 0 100 C 10 -1 5 25 C -50 C 5 10 -1 0 0.2 0.4 0.6 0.8 V 10 -2 1.2 V BE sat 0 0.5 V 1.0 V BE 6 2011-08-16 BCW60, BCX70 Collector cutoff current ICBO = (TA) VCB = VCEmax BCW 60/BCX 70 10 4 nA Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz EHP00335 10 3 BCW 60/BCX 70 EHP00330 MHz CBO fT 10 3 max 10 2 10 2 10 1 5 typ 10 0 10 -1 0 50 100 10 1 10 -1 150 C 10 0 10 1 mA 10 2 C TA Collector-base capacitance Ccb = (VCB) Total power dissipation P tot = (TS) Emitter-base capacitance Ceb = (VEB) 12 360 mW 10 300 9 270 8 240 Ptot CCB(CEB ) pF 7 6 210 180 5 150 CEB 4 120 3 90 2 60 1 0 0 30 CCB 4 8 12 16 V 0 0 22 VCB(VEB 7 15 30 45 60 75 90 105 120 C 150 TS 2011-08-16 BCW60, BCX70 h parameter he = (IC) normalized VCE = 5V Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 BCW 60/BCX 70 EHP00328 Ptot max 5 Ptot DC D= tp T 10 2 tp he BCW 60/BCX 70 EHP00336 5 T h 11e 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 VCE = 5 V 1 5 h 12e 10 0 h 21e 5 5 h 22e 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 -1 10 -1 10 0 5 10 0 C tp h parameter he = (VCE ) normalized IC = 2mA 2.0 BCW 60/BCX 70 Noise figure F = (VCE) IC = 0.2mA, RS = 2k , f = 1kHz EHP00337 C = 2 mA he 10 1 mA 20 F BCW 60/BCX 70 EHP00338 dB 1.5 h 21e h 11e 15 1.0 h 12e 10 h 22e 0.5 0 5 0 10 20 V 0 10 -1 30 VCE 10 0 10 1 V 10 2 VCE 8 2011-08-16 BCW60, BCX70 Noise figure F = (f) Noise figure F = (IC ) VCE = 5V, f = 120Hz VCE = 5V, ZS = ZSopt 20 F BCW 60/BCX 70 EHP00339 dB 20 F BCW 60/BCX 70 EHP00340 dB 15 15 10 10 RS = 1 M 100 k 10 k 500 5 5 1 k 0 10 -2 10 -1 10 0 10 1 0 10 -3 kHz 10 2 10 -2 10 -1 Noise figure F = (IC ) VCE = 5V, f = 1kHz F Noise figure F = (IC ) VCE = 5V, f = 10kHz BCW 60/BCX 70 EHP00341 dB 20 F 15 R S = 1 M BCW 60/BCX 70 EHP00342 dB RS = 1 M 15 100 k 10 k 100 k 10 10 10 k 500 1 k 5 5 1 k 500 0 10 -3 mA 10 1 C f 20 10 0 10 -2 10 -1 0 10 -3 mA 10 1 10 0 C 10 -2 10 -1 10 0 mA 10 1 C 9 2011-08-16 Package SOT23 BCW60, BCX70 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 10 2011-08-16 BCW60, BCX70 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2011-08-16