BC857BW-7 - DIODES INC - Datasheet.Live

2011-08-16

1

BCW60, BCX70

1

2

3

NPN Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW61, BCX71 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCW60B

BCW60C

BCW60D

BCW60FF

BCX70G

BCX70H

BCX70J

BCX70K

ABs

ACs

ADs

AFs

AGs

AHs

AJs

AKs

1=B

2=E

3=C

SOT23

2011-08-16

2

BCW60, BCX70

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BCW60, ...60FF

BCX70

VCEO

32

45

V

Collector-base voltage

BCW60, ...60FF

BCX70

VCBO

32

45

Emitter-base voltage VEBO 6

Collector current IC100 mA

Peak collector current, tp ≤ 10 ms ICM 200

Peak base current IBM 200

Total power dissipation

TS ≤ 71 °C

Ptot 330 mW

Junction temperature Tj150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 240 K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-08-16

3

BCW60, BCX70

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCW60, ...60FF

IC = 10 mA, IB = 0 , BCX70

V(BR)CEO

32

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BCW60, ...60FF

IC = 10 µA, IE = 0 , BCX70

V(BR)CBO

32

45

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO 6 - -

Collector-base cutoff current

VCB = 32 V, IE = 0 , BCW60, ...60FF

VCB = 45 V, IE = 0 , BCX70

VCB = 32 V, IE = 0 , TA= 150 °C, BCW60, ...60FF

VCB = 45 V, IE = 0 , TA = 150 °C, BCX70

ICBO

-

0.02

20

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO - - 20 nA

DC current gain-

IC = 10 µA, VCE = 5 V, hFE-grp. G

IC = 10 µA, VCE = 5 V, hFE-grp. B/ H

IC = 10 µA, VCE = 5 V, hFE-grp. C/ J/ FF

IC = 10 µA, VCE = 5 V, hFE-grp. D/ K

IC = 2 mA, VCE = 5 V, hFE-grp. G

IC = 2 mA, VCE = 5 V, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, hFE-grp. D/ K

IC = 50 mA, VCE = 1 V, hFE-grp. G

IC = 50 mA, VCE = 1 V, hFE-grp. B/ H

IC = 50 mA, VCE = 1 V, hFE-grp. C/ J/ FF

IC = 50 mA, VCE = 1 V, hFE-grp. D/ K

hFE

20

40

100

120

180

250

380

50

70

90

100

140

200

300

460

170

250

350

500

-

220

310

460

630

-

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4

BCW60, BCX70

DC Electrical Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VCEsat

-

0.12

0.2

0.25

0.55

V

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VBEsat

-

0.7

0.83

0.85

1.05

Base-emitter voltage1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

VBE(ON)

-

0.58

-

0.52

0.65

0.78

-

0.7

-

1Pulse test: t < 300µs; D < 2%

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BCW60, BCX70

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT- 250 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 0.95 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 9 -

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J /FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h11e

-

2.7

3.6

4.5

7.5

-

kΩ

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B /H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h12e

-

1.5

2

3

-

10-4

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h21e

-

200

260

330

520

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

h22e

-

18

24

30

50

-

µS

Noise figure

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. B - K

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. FF

F

-

2

1

-

2

dB

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 10...50 Hz , hFE-grp. FF

Vn- - 0.135 µV

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BCW60, BCX70

DC current gain hFE = ƒ(IC)

VCE = 5 V

10

EHP00334BCW 60/BCX 70

-2 2

10mA

0

10

3

10

5

10

-1

10

0

10

1

C

FE

h

Ι

1

10

2

10

˚C

100

5

25

˚C

-50

˚C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

0

10

EHP00332BCW 60/BCX 70

CEsat

V

V 0.5

-1

10

0

10

1

2

10

5

Ι

C

mA

0.1 0.2 0.3 0.4

˚C

100

25

˚C

-50

˚C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 40

0

10

EHP00331BCW 60/BCX 70

BE sat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

˚C

25

100

˚C

-50

˚C

Collector current IC = ƒ(VBE)

VCE = 5V

0

10

EHP00333BCW 60/BCX 70

BE

V

0.5 V 1.0

-2

10

-1

10

0

2

10

5

Ι

C

mA

5

1

10

˚C

100 25 -50

˚C ˚C

2011-08-16

7

BCW60, BCX70

Collector cutoff current ICBO = ƒ(TA)

VCB = VCEmax

0

10

EHP00335BCW 60/BCX 70

A

T

150

-1

4

10

Ι

CBO

nA

50 100

0

10

1

10

3

10

˚C

typ

max

10

2

Transition frequency fT = ƒ(IC)

VCE = parameter in V, f = 2 GHz

10

EHP00330BCW 60/BCX 70

-1 2

10mA

1

10

3

10

5

100101

102

C

T

fMHz

Ι

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

0 4 8 12 16 V22

VCB(VEB

0

1

2

3

4

5

6

7

8

9

10

pF

12

CCB(CEB)

CCB

CEB

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW

360

Ptot

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8

BCW60, BCX70

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10

EHP00328BCW 60/BCX 70

-6

0

10

5

D

=

5

10

1

5

10

2

3

10

-5

10

-4

10

-3

10

-2

10

0

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

tp

=

DT

tp

T

totmax

tot

P

DC

P

p

t

h parameter he = ƒ(IC) normalized

VCE = 5V

10

EHP00336BCW 60/BCX 70

-1 1

10mA

-1

10

2

10

5

100

C

e

h

Ι

1

10

5

CE

V

= 5 V

11e

h

h12e

h21e

h22e

5

h parameter he = ƒ(VCE) normalized

IC = 2mA

0

EHP00337BCW 60/BCX 70

CE

V

30

10 20

0.5

1.0

1.5

2.0

h

e

V

Ι

C

= 2 mA

h

11e

21e

h

12e

h

22e

h

Noise figure F = ƒ(VCE)

IC = 0.2mA, RS = 2kΩ , f = 1kHz

10

EHP00338BCW 60/BCX 70

-1 2

10V

5

100101

F

10

15

20

dB

0

CE

V

2011-08-16

9

BCW60, BCX70

Noise figure F = ƒ(f)

VCE = 5V, ZS = ZSopt

10

EHP00339BCW 60/BCX 70

-2 2

10kHz

5

10

-1

10

0

F

1

10

15

20

dB

f

0

Noise figure F = ƒ(IC)

VCE = 5V, f = 120Hz

10

EHP00340BCW 60/BCX 70

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

S

R

= 1 M

ΩΩ

100 k

Ω

10 k

Ω

1 k

Ω

500

Noise figure F = ƒ(IC)

VCE = 5V, f = 1kHz

10

EHP00341BCW 60/BCX 70

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

Ω

= 1 M

S

R

100 k

Ω

10 k

Ω

1 k

Ω

500

Ω

Noise figure F = ƒ(IC)

VCE = 5V, f = 10kHz

10

EHP00342BCW 60/BCX 70

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

= 1 M

RS

100 k

10 k

500

1 k

Ω

2011-08-16

10

BCW60, BCX70

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25

M

BC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

C

B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

M

2.4

±0.15

±0.1

1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

12

3

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2011-08-16

11

BCW60, BCX70

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

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please contact the nearest Infineon Technologies Office (<www.infineon.com>).

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For information on the types in question, please contact the nearest Infineon

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