AMPLIFIER - LOW NOISE - CHIP
1
HMC392A
v02.0618
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC392A is a GaAs MMIC Low Noise Amplier
die which operates between 3.5 and 7.0 GHz. The
amplier provides 17.2 dB of gain, 1.7 dB noise gure,
and 32.5 dBm IP3 from a +5V supply voltage. The
HMC392A has six bonding adjustment options which
allow the user to select the bias point and output
power of the device (+10 to +19.7 dBm). The HMC392A
amplier can easily be integrated into Multi-Chip-
Modules (MCMs) due to its small (1.3 mm2) size. All
data is with the chip in a 50 Ohm test xture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Gain: 17.2 dB
Noise Figure: 1.7 dB
Single Supply Voltage: +5V
50 Ohm Matched Input/Output
No External Components Required
Small Size: 1.3 x 1.0 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd = 5V
Typical Applications
The HMC392A is ideal for:
• Point-to-Point Radios
• VSAT
• LO Driver for HMC Mixers
• Military EW, ECM, C3I
• Space
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 4.0 - 6.0 3.5 - 7.0 GHz
Gain 14.5 17.4 14.5 17. 2 dB
Gain Variation Over Temperature 0.005 0.005 dB/ °C
Noise Figure 1.7 3.0 1.7 3.4 dB
Input Return Loss 12 12 dB
Output Return Loss 20 18 dB
Output Power for 1 dB Compression (P1dB) 19.5 19 dBm
Saturated Output Power (Psat) 20.5 20 dBm
Output Third Order Intercept (IP3) 32.5 32.5 dBm
Supply Current (Idd) 59 75 59 75 mA
Note: Data taken with pad PS2 bonded to ground (state 2) unless otherwise noted.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIER - LOW NOISE - CHIP
2
HMC392A
v02.0618
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature Reverse Isolation vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
23456789
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
15
15.5
16
16.5
17
17.5
18
18.5
19
33.544.555.566.577.58
+25C +85C -55C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
33.544.555.566.577.58
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
33.544.555.566.577.58
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
33.544.555.566.577.58
+25C +85C -55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
33.544.555.566.577.58
+25C +85C -55C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIER - LOW NOISE - CHIP
3
HMC392A
v02.0618
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Output IP3 vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 5.5 GHz
P1dB vs. Temperature Psat vs. Temperature
P1dB vs. Power Select State
Gain & Noise Figure vs.
Power Select State
10
12
14
16
18
20
22
345678
+25C +85C -55C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
345678
+25C +85C -55C
Psat (dBm)
FREQUENCY (GHz)
20
24
28
32
36
40
345678
+25C +85C -55C
IP3 (dBm)
FREQUENCY (GHz)
16
17
18
19
20
21
1
1.2
1.4
1.6
1.8
2
4.5 4.75 5 5.25 5.5
NOISE FIGURE
GAIN P1dB
GAIN(dB), P1dB(dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
9
11
13
15
17
19
21
33.544.555.566.577.58
State 1 Idd=59mA
State 2 Idd=54mA
State 3 Idd=48mA
State 4 Idd=41mA
State 5 Idd=34mA
State 6 Idd=24mA
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
33.544.555.566.577.58
Gain State 1
Gain State 2
Gain State 3
Gain State 4
Gain State 5
Gain State 6
NF State 1
NF State 2
NF State 3
NF State 4
NF State 5
NF State 6
GAIN, NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIER - LOW NOISE - CHIP
4
HMC392A
v02.0618
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +7 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc) +20 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 9.3 mW/°C above 85 °C) 0.83 W
Thermal Resistance
(channel to die bottom) 108 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85° C
ESD Class 1A
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Typical Supply Current vs. Vdd
Vdd (Vdc) Idd (mA)
+4.5 57
+5.0 59
+5.5 62
(State 2 Depicted)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
WP-16 (Waffle Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIER - LOW NOISE - CHIP
5
HMC392A
v02.0618
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
3RFIN This pad is AC coupled and matched to 50 Ohms
5
6
7
8
9
10
Power Select
PS1
PS2
PS3
PS4
PS5
PS6
One of these pads must be connected to ground.
See Power Select Table for selection criteria.
1, 2 Vdd,
Vdd (alt.)
Power supply voltage. Connect either pad 1 or pad 2 to +5V
supply. No choke inductor or bypass capacitor is needed.
4RFOUT This pad is AC coupled and matched to 50 Ohms
Die
Bottom GND Die bottom must be connected to RF/DC ground.
Power Select Table
State Pads Bonded to Ground Typical Idd (mA) Typical P1dB (dBm)
1PS1 69 19.7
2PS2 59 19.4
3PS3 49 18.8
4PS4 38 17.5
5PS5 27 14.8
6PS6 17 10.3
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIER - LOW NOISE - CHIP
6
HMC392A
v02.0618
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective
bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of
265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a tem-
perature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
Note: State 2 shown. PS2 bonded to ground.