2SK709
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK709
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
• High |Yfs|: |Yfs| = 25 mS (typ.)
• Low Ciss: Ciss = 7.5 pF (typ.)
• Low noise
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −20 V
Gate current IG 10 mA
Drain power dissipation PD 300 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = −15 V, VDS = 0 −1.0 nA
Gate-drain breakdown voltage V (BR) GDS V
DS = 0, IG = −100 µA −20 V
Drain current IDSS
(Note)
VDS = 5 V, VGS = 0 6 32 mA
Gate-source cut-off voltage VGS (OFF) V
DS = 5 V, ID = 1 µA −2.5 V
Forward transfer admittance Yfs V
DS = 5 V, VGS = 0, f = 1 kHz 15 25 mS
Input capacitance Ciss V
DS = 5 V, VGS = 0, f = 1 MHz 7.5 10 pF
Reverse transfer capacitance Crss V
DG = 5 V, ID = 0, f = 1 MHz 2 3 pF
Noise figure NF VDS = 5 V, ID = 1 mA
Rg = 1 kΩ, f = 1 kHz 0.5 3 dB
Note: IDSS classification GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1A
Weight: 0.21 g (typ.)
2SK709
2003-03-27
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2SK709
2003-03-27
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2SK709
2003-03-27
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000707EA
A
RESTRICTIONS ON PRODUCT USE
