MITSUBISHI SEMICONDUCTOR TRIAC BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CS OUTLINE DRAWING 4 Dimensions in mm 1.3 VOLTAGE CLASS +0.3 0 -0 (1.5) 3.0 -0.5 +0.3 1.5 MAX 8.60.3 9.80.5 TYPE NAME 4.5 1.5 MAX 10.5 MAX 1 5 0.5 1 2 3 24 * IT (RMS) ........................................................................ 8A * VDRM ..............................................................400V/600V * IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) 5 1 1 2 3 3 4 2.60.4 4.5 0.8 Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S APPLICATION Solid state relay, hybrid IC MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage 1 400 600 V VDSM Non-repetitive peak off-state voltage 1 500 720 V Conditions Parameter Symbol IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Tc =105C ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 8 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 80 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 26 A2s 5 W 0.5 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Storage temperature Tstg -- Weight Typical value A -40 ~ +125 C -40 ~ +125 C 1.2 g 1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125C, V DRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM=12A, Instantaneous measurement -- -- 1.5 V -- -- 1.5 V -- -- 1.5 V 1.5 ! VFGT ! VRGT ! Gate trigger voltage 2 @ Tj=25C, VD =6V, RL=6, RG=330 VRGT # # -- -- IFGT ! ! -- -- 30 5 mA -- -- 30 5 mA -- -- 30 5 mA 0.2 -- -- V -- -- 2.0 C/ W 3 -- -- V/s IRGT ! Gate trigger current 2 @ Tj=25C, VD =6V, RL=6, RG=330 # IRGT # VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case 4 (dv/dt) c Critical-rate of rise of off-state commutating voltage V 2. Measurement using the gate trigger characteristics measurement circuit. 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. 4. The contact thermal resistance Rth (c-f) is 1.0C/W. 5. High sensitivity (I GT20mA) is also available. (IGT item 1) Voltage class VDRM (V) 8 400 (dv/dt) c Symbol Min. R -- SUPPLY VOLTAGE 1. Junction temperature Tj =125C L 10 V/s R 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit -- 2. Rate of decay of on-state commutating current (di/dt)c=-4A/ms L MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD =400V 600 TIME TIME (dv/dt)c 10 VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 100 7 5 3 2 101 7 5 3 2 Tj = 125C Tj = 25C 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PG(AV) = 0.5W VGM = 10V PGM = 5W 101 7 5 3 2 IGM = 2A VGT = 1.5V 100 7 5 3 2 IFGT I IRGT I, IRGT III 10-1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) 3 2 100 (%) GATE CHARACTERISTICS 103 7 5 4 3 2 102 7 5 4 3 2 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 101 -60 -40 -20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (C/W) 102 7 5 4 3 2 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 160 14 140 CASE TEMPERATURE (C) 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) ON-STATE POWER DISSIPATION (W) TYPICAL EXAMPLE 12 360 CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 IRGT I IFGT I JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0 IRGT III 101 -60 -40 -20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE 2 4 6 8 10 12 14 RMS ON-STATE CURRENT (A) 16 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CS MEDIUM POWER USE 80 100 100 t2.3 60 60 60 t2.3 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 8 10 12 14 60 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 104 7 5 3 2 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) JUNCTION TEMPERATURE (C) 103 7 5 3 2 T2+, G- TYPICAL EXAMPLE DISTRIBUTION ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 102 7 5 3 2 100 -40 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 101 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 16 BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) LACHING CURRENT (mA) 120 120 t2.3 100 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE COPPER AND ALUMINUM 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 (%) AMBIENT TEMPERATURE (C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE T2 , G TYPICAL T2- , G- EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR8CS MEDIUM POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 140 120 100 80 60 III QUADRANT 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 100 (%) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE COMMUTATION CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 103 7 5 4 3 2 (dv/dt)C t VD CURRENT WAVEFORM (di/dt)C IT t 101 7 I QUADRANT 5 3 MINIMUM 2 CHARAC100 TERISTICS III QUADRANT 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH VOLTAGE WAVEFORM 3 TYPICAL 2 EXAMPLE 102 Tj = 125C 7 IT = 4A 5 = 500s 3 VD = 200V 2 f = 3Hz RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE IFGT I A 6V IRGT I V IRGT III TEST PROCEDURE 1 102 7 5 4 3 2 A 6V RG V RG TEST PROCEDURE 2 6 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) V RG TEST PROCEDURE 3 Feb.1999