IGBT MODULE Spec.No.IGBT-SP-03010 R4 P1 MBN1600E17D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70C, N>30,000cycles) Isolated heat sink (terminal to base). o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN1600E17D V V 1,700 20 1,600 A 3,200 1,600 A 3,200 o C -40 ~ +125 o C -40 ~ +125 VRMS 4,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions o 10 VCE=1,700V, VGE=0V, Tj=25 C Collector Emitter Cut-Off Current I CES mA o 10 35 VCE=1,700V, VGE=0V, Tj=125 C o Gate Emitter Leakage Current IGES nA -500 +500 VGE=20V, VCE=0V, Tj=25 C o Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.3 IC=1,600A, VGE=15V, Tj=125 C o Gate Emitter Threshold Voltage VGE(TO) V 5.5 7.0 8.5 VCE=10V, IC=160mA, Tj=25 C o Input Capacitance Cies nF 140 VCE=10V, VGE=0V, f=100kHz, Tj=25 C o Internal Gate Resistance Rge 0.8 VCE=10V, VGE=0V, f=100kHz, Tj=25 C Rise Time tr 0.7 1.4 VCC=900V, Ic=1,600A (3) Turn On Time ton 1.2 2.4 L=65nH,CGE=150nF Switching Times s (3) Fall Time tf 0.2 0.4 RG=1.5 o Turn Off Time toff 1.9 3.8 VGE=15V, Tj=125 C o Peak Forward Voltage Drop VFM V 1.9 2.5 IF=1,600A, VGE=0V, Tj=125 C Reverse Recovery Time trr s 0.7 1.1 VCC=900V, Ic=1,600A (3) Turn On Loss Eon(10%) J/P 0.5 0.8 L=65nH,CGE=150nF (3) Turn Off Loss Eoff(10%) J/P 0.5 0.8 RG=1.5 o Reverse Recovery Loss Err(10%) J/P 0.5 0.8 VGE=15V, Tj=125 C Notes:(3) RG and CGE value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG and CGE value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-03010 R4 P2 MBN1600E17D THERMAL CHARACTERISTICS Item Symbol IGBT Thermal Impedance FWD Contact Thermal Impedance Rth(j-c) Rth(j-c) Rth(c-f) Unit K/W K/W Min. - Typ. Max. Test Conditions 0.015 Junction to case 0.023 0.008 Case to fin MODULE MECHANICAL CHARACTERISTICS Item Unit Weight Stray inductance in module Terminal Resistance Comparative Tracking Index Module base plate Material Baseplate Thickness Insulation plate Material Terminal Surface treatment Case Material Fire and Smoke Category g nH m LS(CM-EM) RTerminal (CTI) mm Characteristics Conditions 900 18 Collector-main to Emitter-main 0.14 Collector-main to Emitter-main 600 Al-SiC 5 Al N Ni plating Poly-Phenilene Sulfide I2 / F3 NFF 16-102 http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-03010 R4 P3 MBN1600E17D DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Cge Fig.1 Switching test circuit Ic Vce Ls= VL dIc ( d )t=t t 0 VL L tL Fig.2 Definition of stray inductance Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% t t tr ton t3 t4 t2 t4 Eon(10%)= Ic Vce dt t3 t2 Eon(Full)= Ic Vce dt t1 0 0 10% 0.5Irm 0.1IF 0 t t Vge 90% t tf toff t5 t7 t8 t6 t8 Eoff(10%)= Ic Vce dt t7 t6 Eoff(Full)= Ic Vce dt t5 Fig.3 Definition of switching loss http://store.iiic.cc/ trr IF -Ic t9 t11 t12 t10 t12 Err(10%)= IFVce dt t11 t10 Err(Full)= IFVce dt t9 IGBT MODULE Spec.No.IGBT-SP-03010 R4 P4 MBN1600E17D CHARACTERISTICS CURVE STATIC CHARACTERISTICS TYPICAL TYPICAL VGE=15V,13V,11V 2000 2000 Tj=125 1800 1600 1600 1400 1400 Collector Collector Current,Ic(A) current,Ic(A) Collector current,Ic(A) Tj=RT 1800 1200 1000 800 600 9V VGE=15V,13V, 11V 1200 1000 800 9V 600 400 400 200 200 7V 0 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 Collector to Emitter Voltage,VCE(V) 2000 Tj=RT Tj=125 1600 Forward Forward Current,IF(A) Current,IF(A) 1400 1200 1000 800 600 400 200 0 0.5 1 1.5 2 1.5 2 2.5 3 3.5 4 4.5 Collector Current vs.Collector to Emitter Voltage TYPICAL 0 1 Collector to Emitter Voltage,VCE(V) Collector Current vs.Collector to Emitter Voltage 1800 0.5 2.5 3 Forward Voltage,VF(V) Forward Voltage of free-wheeling diode http://store.iiic.cc/ 5 IGBT MODULE Spec.No.IGBT-SP-03010 R4 P5 MBN1600E17D DYNAMIC CHARACTERISTICS DEPENDENCE OF CURRENT TYPICAL TYPICAL 1 1 Conditions Conditions Conditions Conditions Tc=12 5 Tc=12 5 Vcc=900V Vcc=900V L= 65nH L= 65nH G GE=150n F V G=15V V =15V G GE=150n F G In ductive Load In ductive Load C 0.5 Turn-on Loss Eon(10%) V CE Eoff(Full) 0.5 Eoff(10%) Turn-off Loss Eon(Full) Eoff (J/pulse) R =1.5 C Eon (J/pulse) R =1.5 IC V CE IC 10% 0 10% 10% 0 10% t V GE 0 V GE 0 t5 t7 t1 t3 t4 t2 V Eon(full)= I V Eon(10%)= t4 IC t1 dt CE t3 t2 C t8 IC t7 VCE dt t6 Eoff(full)= CE t8 t6 Eoff(10%)= dt 0 IC t5 VCE dt 0 0 500 1000 1500 Collector Current 2000 0 500 Ic (A) 1000 Collector Current Turn-on Loss vs. Collector Current 1500 2000 Ic (A) Turn-off Loss vs. Collector Current TYPICAL TYPICAL 3.0 1 Conditions Conditions Conditions Conditions Tc=125 Tc=12 5 Vcc=900V Vcc=900V L=6 5nH L= 65nH G CGE=150n F V G=15V G GE=150nF G R =1.5 R =1.5 2.5 V =1 5V Inducti ve Load In ductive Load 0.6 Switching Time ton,tr,toff,tf,trr ( us ) Reverse Recovery Loss Err (J/pulse) 0.8 C Err(full) Err(10%) 0.4 V CE 0.1V CE IRM 0.1IF 0 2.0 toff 1.5 ton 1.0 trr t 0.2 tr IF IC Err(10%)= Err(full)= t11 t10 V I V t12 IC CE dt C CE dt t11 t10 t9 0.5 t12 t9 tf 0.0 0 0 500 1000 1500 2000 0 500 1000 Collector Current Forward Current, IF(A) 1500 IC (A) Switching Time vs. Collector Current Recovery Loss vs. Forward Current http://store.iiic.cc/ 2000 IGBT MODULE Spec.No.IGBT-SP-03010 R4 P6 MBN1600E17D DEPENDENCE OF RG TYPICAL TYPICAL 1 1.5 Conditions Conditions V CE Conditions Conditions IC Tc=12 5 Tc=12 5 Vcc=900V C I =160 0A 0 L= 65nH 0 GE=150n F G=15V Vcc=900V 10% 10% C I =160 0A V GE L= 65nH C V V V In ductive Load Eon(full)= t4 IC t3 t2 IC t1 CE CE dt dt 1 Eon(Full) Eoff(Full) 0.5 Turn-off Loss Eon (J/pulse) Eon(10%)= Turn-on Loss GE=150n F G=15V C t4 t2 t1 t3 In ductive Load Eoff (J/pulse) V 0.5 Eon(10%) Eoff(10%) IC V CE 10% 0 10% t V GE 0 t5 t7 Eoff(full)= 0 t8 0.5 1.0 1.5 2.0 Gate Resistance RG ( ) 2.5 3.0 0.0 t7 t6 IC t5 VCE dt VCE dt TYPICAL V CE 0.1V CE Tc=12 5 IRM 0.1IF 0 Vcc=900V t IF =1600A IF L= 65nH IC G GE=150n F V G=15V t12 t9 R =1.5 C Err(10%)= In ductive Load Err(full)= t11 IC CE dt C CE dt t11 t10 t9 t10 V I V t12 1 0.5 Err(10%) Err(Full) 0 0.0 0.5 1.0 1.5 Gate Resistance 2.0 ) 1.0 1.5 2.5 2.0 ) 2.5 RG ( Turn-off Loss vs. Gate Resistance 1.5 Conditions Conditions 0.5 Gate Resistance Turn-on Loss vs. Gate Resistance Err (J/pulse) IC 0 0.0 Reverse Recovery Loss t8 t6 Eoff(10%)= 3.0 RG ( Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 3.0 IGBT MODULE Spec.No.IGBT-SP-03010 R4 P7 MBN1600E17D OUTLINE DRAWINGS Unit in mm C C C E E G E Circuit diagram http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-03010 R4 P8 MBN1600E17D TRANSIENT THERMAL IMPEDANCE Maximum Transient thermalthermal impedance : Zth(j-c) (K/W) Transient impedance 0.1 FWD I G BT 0.01 0.001 0.0001 0.001 0.01 0.1 Time : t(s) 1 Transient Thermal Impedance Curve http://store.iiic.cc/ 10 IGBT MODULE Spec.No.IGBT-SP-03010 R4 P9 MBN1600E17D Negative environmental impact material Please note the following materials are contained in the product, in order to keep characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-03010 R4 P10 MBN1600E17D HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 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