Features
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GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
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Si CMOS
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GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SGA6489Z
DC to 3500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
The SGA6489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
0
6
12
18
24
012345
Frequency (GHz)
Gain (dB)
-40
-30
-20
-10
0
Return Loss (dB)
GAIN
IRL
ORL
Gain & Return Loss vs. Frequency
VD= 5.1 V, ID= 75 mA (Typ.)
High Gain: 17.5dB at
1950MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS111014
Package: SOT-89
SGA6489ZLow
Noise, High
Gain SiGe HBT
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 18.4 20.1 22.4 dB 850MHz
17.5 dB 1950MHz
16.5 dB 2400 MHz
Output Power at 1dB Compression 20.7 dBm 850MHz
18.7 dBm 1950MHz
Output Third Intercept Point 34.0 dBm 850MHz
32.0 dBm 1950MHz
Bandwidth Determined by Return
Loss 3500 MHz >10dB
Input Return Loss 14.4 dB 1950MHz
Output Return Loss 10.9 dB 1950MHz
Noise Figure 3.0 dB 1950MHz
Device Operating Voltage 4.7 5.1 5.5 V
Device Operating Current 67 75 83 mA
Thermal Resistance
(Junction - Lead) 97 °C/W
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
2 of 6 DS111014
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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SGA6489Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter Rating Unit
Max Device Current (ID)150mA
Max Device Voltage (VD)7V
Max RF Input Power +18 dBm
Max Junction Temp (TJ)+150°C
Operating Temp Range (TL) -40 to +85 °C
Max Storage Temp +150 °C
Moisture Sensitivity Level MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l
Parameter Unit 100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain dB 21.0 20.8 20.1 17.5 16.5 14.0
Output Third Order Intercept Point dBm 35.0 34.5 34.0 32.0 30.1 25.0
Output Power at 1dB Compression dBm 20.6 20.9 20.7 18.7 17.4 14.0
Input Return Loss dB 29.4 30.8 24.7 14.4 12.5 10.8
Output Return Loss dB 18.7 16.3 14.6 10.9 10.9 10.0
Reverse Isolation dB 23.9 23.8 23.9 22.2 21.4 19.3
Noise Figure dB 3.2 2.8 2.7 3.0 3.4 4.4
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0 dBm, RBIAS=39, TL=25°C, ZS=ZL=50
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
OIP3 vs. Frequency
VD= 5.1 V, ID= 75 mA P1dB vs. Frequency
VD= 5.1 V, ID= 75 mA
20
24
28
32
36
40
0.00.51.01.52.02.53.03.5
Frequenc y (GHz)
OIP3(dBm)
+25°C
-40°C
+85°C 12
14
16
18
20
22
0.00.51.01.52.02.53.03.5
Frequenc y (GHz)
P1dB(dBm)
+25°C
-40°C
+85°C
TLTL
Noise Figure vs. Frequency
VD=5.1 V, ID= 75 mA
TL=+25ºC
0
1
2
3
4
5
01234
Fre quency (GH z)
Noise Figure (dB)
3 of 6DS111014
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6489Z
0
6
12
18
24
0123456
Frequency (GHz)
|S21| (dB)
+25°C
-40°C
+85°C
|S12| vs. Frequency
VD= 5.1 V, ID= 75 mA |S22| vs. Frequency
VD= 5.1 V, ID= 75 mA
|S11| vs. Frequency
VD= 5.1 V, ID= 75 mA
|S21| vs. Frequency
VD= 5.1 V, ID= 75 mA
-40
-30
-20
-10
0
012345
Frequency (G Hz)
|S11| (dB)
+25°C
-40°C
+85°C
TL
TL
-27
-24
-21
-18
-15
-12
012345
Frequency (GHz)
|S12| (dB)
+25°C
-40°C
+85°C -40
-30
-20
-10
0
012345
Frequency (GHz)
|S22| (dB)
+25°C
-40°C
+85°C
TLTL
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
VD vs. Temperature for Constant ID = 75 mA
VD vs. ID over Temperature for fixed
VS= 8 V, RBIAS= 39 ohms *
60
65
70
75
80
85
90
4.7 4.9 5.1 5.3 5.5
VD(Volts)
ID(mA)
+85°C
+25°C
-40°C
4.7
4.9
5.1
5.3
5.5
5.7
-40 -15 10 35 60 85
Temperature(°C)
VD(Volts)
4 of 6 DS111014
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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SGA6489Z
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Pin Function Description
1RF IN
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
2, 4 GND Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
3RF OUT/BIAS
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
Prelimina
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SGA6489Z
Application Schematic
Evaluation Board Layout
Mounting Instructions:
1. Solder the copper pad on the backside of the device package to the ground plane.
2. Use a large ground pad area with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce copper on both sides.
Reference
Designator
Frequency (Mhz)
500 850 1950 2400 3500
CB220 pF 100 pF 68 pF 56 pF 39 pF
CD100 pF 68 pF 22 pF 22 pF 1 5 pF
LC6 8 nH 3 3 nH 22 nH 18 nH 15 n H
Recommended Bias Resist or Values for ID=75mA
RBIAS=( VS-VD) / ID
Supply Volt age( VS) 6 V 8 V 10 V 12 V
RBIAS 12 39 62 91
Note: RBIAS provides DC bias st ability over t emperat ure.
RF in RF out
1 uF
C
B
C
B
C
D
V
S
R
BIAS
L
C
1
2
3
4
1000
pF
SGA6489Z
6 of 6 DS111014
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6489Z
Part Identification
Ordering Information
Ordering Code Description
SGA6489Z 13” Reel with 3000 pieces
SGA6489ZSQ Sample Bag with 25 pieces
SGA6489ZSR 7” Reel with 100 pieces
SGA6489ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag
