PE42582
Document Category: Product Specification
UltraCMOS® SP8T RF Switch, 9 kHz–8 GHz
©2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-76247-3 – (03/2017)
www.psemi.com
Features
High isolation: 41 dB @ 6 GHz
Low insertion loss: 1.1 dB @ 6 GHz
Fast switching time of 227 ns
Power handling of 33 dBm CW
Logic select (LS) pin provides maximum control
logic flexibility
Terminated all-off state mode
External VSS pin to eliminate spur
Packaging – 24-lead 4 × 4 × 0.85 mm QFN
Applications
Test and measurement
Wireless applications up to 8 GHz
Filter bank switching
RF signal routing
Product Description
The PE42582 is a HaRP™ technology-enhanced absorptive SP8T RF switch that supports a frequency range
from 9 kHz to 8 GHz. An external VSS pin is available for bypassing the internal negative voltage generator in
order for the PE42582 to deliver spur-free performance. It delivers high isolation, low insertion loss and fast
switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement
(T&M) and wireless applications up to 8 GH z. No blocking capacitors are required if DC voltage is not present on
the RF ports.
The PE42582 is manufactured on Peregrine’s UltraCMOS® process, a patented advanced form of silicon-on-
insulator (SOI) technology.
Peregrine’ s HaRP tech nology enhancements d eliver high linea rity and excellent harmonics performance . It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Figure 1 • PE42582 Functional Diagram
RF1
RF2
RF4
RF3
RF8
RFC
RF7
RF6
RF5
V1 V2 V3
CMOS Control
Driver and ESD
VSS_EXT
switch
configuration
50Ω
V4
PE42582
SP8T RF Switch
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Optional External VSS
For proper operation, the VSS_EXT pin must be grounded or tied to the VSS voltage specified in Table 2. When the
VSS_EXT pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applica-
tions that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal
negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 Absolute Maximum Ratings for PE42582
Parameter/Condition Min Max Unit
Supply voltage, VDD –0.3 5.5 V
Digital input voltage (V1, V2, V3, V4, LS) –0.3 3.6 V
RF input power (RFC–RFX, 50)See Figure 2 dBm
RF input power into terminated ports, CW(1) (RFX, 50)See Figure 2 dBm
Maximum junction temperature +150 °C
Storage temperature range –65 +150 °C
ESD voltage HBM, all pins(2) 1000 V
ESD voltage CDM, all pins(3) 1000 V
Notes:
1) 100% duty cycle, all bands, 50.
2) Human body m ode l ( MI L- STD 883 M eth od 30 15).
3) Charged de vice m ode l (J ED EC JESD 22 -C 10 1).
DOC-76247-3 – (03/2017) Page 3
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PE42582
SP8T RF Switch
Recommended Operating Conditions
Table 2 lists the recommended operating conditions for the PE42582. Devices should not be operated outside
the recommended operating conditions listed below.
Table 2 Recommended Operating Conditions for PE42582
Parameter Min Typ Max Unit
Normal mode (VSS_EXT = 0V)(1)
Supply voltage, VDD 2.3 3.3 5.5 V
Supply current, IDD 120 200 µA
Bypass mode (VSS_EXT = –3.4V)(2)
Supply voltage, VDD
(Table 3 spec. compliance applies for VDD 3.4V) 3.1 3.4 5.5 V
Supply current, IDD 80 160 µA
Negative supply voltage, VSS_EXT –3.3 –3.0 –2.7 V
Negative supply current, ISS –40 –16 µA
Normal or Bypass mode
Digital input high (V1, V2, V3, V4, LS) 1.17 3.6 V
Digital input low (V1, V2, V3, V4, LS) –0.3 0.6 V
Digital input current
V1, V2, V3, V4
LS 5
10 µA
µA
RF input power, CW (RFC–RFX)(3) See Figure 2 dBm
RF input power, pulsed (RFC–RFX)(4) See Figure 2 dBm
RF input power into terminated ports, CW (RFX)(3) See Figure 2 dBm
Operating temperature range –40 +25 +105 °C
Notes:
1) Normal mod e: connect V SS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use V SS_EXT (pin 7) to bypass and disable internal negative voltage generator.
3) 100% duty cycle, all bands, 50.
4) Pulsed, 5% duty cycle of 4620 µs period, 50.
PE42582
SP8T RF Switch
Page 4 DOC-76247-3 – (03/2017)
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Electrical Specifications
Table 3 provides the PE42582 key electrical specifications at +25 °C (ZS = ZL = 50), unless otherwise
specified. Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V and
VSS_EXT = –3.0V.
Table 3 PE42582 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
Operating frequency 9 kHz 8 GHz As
shown
Insertion loss(3)
RFC–RF1/8
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
0.7
0.8
0.9
0.9
1.1
1.6
0.9
1.0
1.2
1.5
1.9
2.8
dB
dB
dB
dB
dB
dB
RFC–RF2/7
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
0.8
0.9
0.9
1.0
1.3
1.3
1.0
1.1
1.3
1.6
2.3
2.4
dB
dB
dB
dB
dB
dB
RFC–RF3/6
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
0.8
0.9
1.0
1.1
1.2
1.3
1.0
1.1
1.3
1.7
2.2
2.2
dB
dB
dB
dB
dB
dB
RFC–RF4/5
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
0.9
1.1
1.2
1.3
1.4
1.5
1.1
1.3
1.6
1.9
2.2
2.8
dB
dB
dB
dB
dB
dB
DOC-76247-3 – (03/2017) Page 5
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PE42582
SP8T RF Switch
Isolation(3)
RFC–RF1/8
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
61
45
39
34
29
25
65
47
41
36
32
30
dB
dB
dB
dB
dB
dB
RFC–RF2/7
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
63
50
45
38
30
29
67
53
47
41
34
34
dB
dB
dB
dB
dB
dB
RFC–RF3/6
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
64
51
46
38
33
29
68
53
48
40
35
31
dB
dB
dB
dB
dB
dB
RFC–RF4/5
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
81
57
50
45
38
33
85
62
56
48
41
38
dB
dB
dB
dB
dB
dB
Table 3 PE42582 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
PE42582
SP8T RF Switch
Page 6 DOC-76247-3 – (03/2017)
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Return loss
(active port)
RFC–RF1/8
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
25
24
24
21
26
13
dB
dB
dB
dB
dB
dB
RFC–RF2/7
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
24
23
20
18
15
16
dB
dB
dB
dB
dB
dB
RFC–RF3/6
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
24
23
18
15
12
12
dB
dB
dB
dB
dB
dB
RFC–RF4/5
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
24
23
17
15
16
18
dB
dB
dB
dB
dB
dB
Table 3 PE42582 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
DOC-76247-3 – (03/2017) Page 7
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PE42582
SP8T RF Switch
Return loss (RFC port)
RFC–RF1/8
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
25
23
24
23
24
12
dB
dB
dB
dB
dB
dB
RFC–RF2/7
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
24
23
21
19
20
18
dB
dB
dB
dB
dB
dB
RFC–RF3/6
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
24
23
19
16
13
13
dB
dB
dB
dB
dB
dB
RFC–RF4/5
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
24
22
18
16
17
17
dB
dB
dB
dB
dB
dB
Table 3 PE42582 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
PE42582
SP8T RF Switch
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Return loss (terminated
port)
RF1/8
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
16
15
15
15
18
21
dB
dB
dB
dB
dB
dB
RF2/7
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
16
15
15
15
18
19
dB
dB
dB
dB
dB
dB
RF3/6
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
16
15
15
15
16
19
dB
dB
dB
dB
dB
dB
RF4/5
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
16
15
15
16
23
16
dB
dB
dB
dB
dB
dB
Relative insertion
phase(4)
RF2–RF1
(RF7–RF8)
1 GHz
2 GHz
4 GHz
6 GHz
8 GHz
–2.6
–4.7
–7.5
–9.4
–1.4
–1.3
–2.4
–3.4
–2.8
4.4
0
–0.1
0.8
3.8
10.1
Deg
Deg
Deg
Deg
Deg
RF3–RF1
(RF6–RF8)
1 GHz
2 GHz
4 GHz
6 GHz
8 GHz
–3.0
–5.8
–9.3
–11.2
–10.2
–2.1
–4.0
–5.6
–5.7
–1.0
–1.3
–2.1
–1.9
–0.3
8.2
Deg
Deg
Deg
Deg
Deg
RF4–RF1
(RF5–RF8)
1 GHz
2 GHz
4 GHz
6 GHz
8 GHz
–6.9
–13.3
–24.7
–35.8
–45.3
–5.6
–10.7
–18.9
–26.3
–31.5
–4.3
–8.2
–13.0
–16.9
–17.6
Deg
Deg
Deg
Deg
Deg
Input 1dB compression
point(5) RFC–RFX See
Figure 2 dBm
Input 0.1dB compression
point(5) RFC–RFX See
Figure 2 dBm
Table 3 PE42582 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
DOC-76247-3 – (03/2017) Page 9
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PE42582
SP8T RF Switch
Switching Frequency
The PE42582 has a maximum 25 kHz switching
frequency in normal mode (pin 7 tied to ground). A
faster switching frequency is available in bypass
mode (pin 7 tied to VSS_EXT). The rate at which the
PE42582 can be switched is then limited to the
switching time as specified in Table 3.
Switching frequency describes the time duration
between switching events. Switching time is the time
duration between the point the control signal reached
50% of the final value and the point the output signal
reaches within 10% or 90% of its target value.
Spur-Free Performance
The PE42582 spur fundamental occurs around
5 MHz. Its typical performance in normal mode is
–162 dBm/Hz (pin 7 tied to ground), with 30 kHz
bandwidth. If spur-free performance is desired, the
internal negative voltage generator can be disabled
by applying a negative voltage to VSS_EXT (pin 7).
Hot-Switching Capability
The maximum hot switching capability of the PE42582
is 20 dBm above 100 MHz. Hot switching occurs
when RF power is applied while switching between
RF ports.
Thermal Data
Psi-JT (ΨJT), junction top-of-package, is a thermal
metric to estimate junction temperature of a device on
the customer application PCB (JEDEC JESD51-2).
ΨJT = (TJ – TT)/P
where
ΨJT = junction-to-top of package characterization
parameter, °C/W
TJ = die junction temperature, °C
TT = package temperature (top surface, in the
center), °C
P = power dissipated by device, Watts
Input IP2 RFC–RFX 5 MHz
100 MHz–8 GHz 75
105 dBm
dBm
Input IP3 RFC–RFX 5 MHz
100 MHz–8 GHz 53
60 dBm
dBm
RF TRISE/TFALL 10%/90% RF 100 130 ns
Settling time 50% CTRL to 0.05 dB final value 870 1400 ns
Switching time 50% CTRL to 90% or 10% of RF 227 290 ns
Notes:
1) Normal mod e: connect V SS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use V SS_EXT (pin 7) to bypass and disable internal negative voltage generator.
3) Insertion loss and isolation perf orman ce can be improved by a good RF gr ound on the LS pin (p in 1).
4) Defined with S-par ameters, relative insert ion ph ase (RFX –RF1) = S(x+1)1 S21, where incident Por t -1 is R FC, r espo nse Po rt- 2 = RF 1 , a nd
response Port-(x+1) = RFx.
5) The input 1dB an d 0. 1dB com pr ession p oin ts a re lin ear ity figu r es o f mer it. R efe r to Table 2 for the RF input power (50).
Table 3 PE42582 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
Table 4 Thermal Data for PE42582
Parameter Typ Unit
ΨJT 23 °C/W
ΘJA, junction-to-ambient thermal resistance 63 °C/W
PE42582
SP8T RF Switch
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Control Logic
Table 5 provides the control logic truth table for PE42582.
Table 5 Truth Table for PE42582
LS(1) V4 V3 V2 V1 RFC–RF1 RFC–RF2 RFC–RF3 RFC–RF4 RFC–RF5 RFC–RF6 RFC–RF7 RFC–RF8
0 0000 ON OFF OFF OFF OFF OFF OFF OFF
0 0100 OFF ON OFF OFF OFF OFF OFF OFF
0 0010 OFF OFF ON OFF OFF OFF OFF OFF
0 0 1 1 0 OFF OFF OFF ON OFF OFF OFF OFF
0 0 0 0 1 OFF OFF OFF OFF ON OFF OFF OFF
0 0 1 0 1 OFF OFF OFF OFF OFF ON OFF OFF
0 0 0 1 1 OFF OFF OFF OFF OFF OFF ON OFF
0 0 1 1 1 OFF OFF OFF OFF OFF OFF OFF ON
1 0111 ON OFF OFF OFF OFF OFF OFF OFF
1 0011 OFF ON OFF OFF OFF OFF OFF OFF
1 0101 OFF OFF ON OFF OFF OFF OFF OFF
1 0 0 0 1 OFF OFF OFF ON OFF OFF OFF OFF
1 0 1 1 0 OFF OFF OFF OFF ON OFF OFF OFF
1 0 0 1 0 OFF OFF OFF OFF OFF ON OFF OFF
1 0 1 0 0 OFF OFF OFF OFF OFF OFF ON OFF
1 0 0 0 0 OFF OFF OFF OFF OFF OFF OFF ON
X(2) 1 0 0 0 OFF OFF OFF OFF OFF OFF OFF OFF
Notes:
1) LS has an in tern al 1 M pull-up resistor to logic high. Connect LS to GND externally to generate a logic 0. Leaving LS floating will generate a
logic 1.
2) LS = don’t care, V4 = 1, V3 = V2 = V1 = 0, all ports are terminated to provide an all isolated stat e.
DOC-76247-3 – (03/2017) Page 11
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PE42582
SP8T RF Switch
Power De-rating Curve
Figure 2 shows the power de-rating curve showing P1dB compression, P0.1dB compression, maximum RF
input power (pulsed), maximum RF input power (CW), absolute maximum RF terminated power (CW), and
maximum RF terminated power (CW).
Figure 2 • Power De-rating Curve, 9 kHz–8 GHz, –40 °C to +105 °C Ambient, 50Ω
5
10
15
20
25
30
35
40
45
0.001 0.01 0.1 1 10 100 1000 10000
Input Power (dBm)
Frequency (MHz)
P1dB Compression @ 25 °C Ambient/Abs. Max. RF Input Power
P0.1dB Compression @ 25 °C
Max. RF Input Power, Pulsed
Max. RF Input Power, CW
Abs. Max. RF Terminated Power, CW
Max. RF Terminated Power, CW
PE42582
SP8T RF Switch
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Isolation Matrix
Table 6 provides RFC-to-port isolation and Table 7 provides port-to-port isolation at +25 °C,
VDD = 3.3V (ZS = ZL = 50). Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V
and VSS_EXT = –3.0V.
Table 6 RFC-to-Port Isolation
“ON”
Port Frequency Isolation (dB)
RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8
RF1
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
69
62
57
48
37
34
68
53
48
40
35
31
85
62
56
49
44
41
91
74
68
63
55
56
88
66
60
54
50
47
87
64
58
52
46
45
79
57
51
45
42
38
RF2
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
67
52
46
39
32
30
69
60
57
49
43
37
90
67
62
54
49
46
91
74
68
63
56
55
88
66
60
53
50
47
86
64
57
52
46
46
77
56
50
45
42
40
RF3
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
65
47
42
36
33
31
68
55
51
44
40
36
86
66
57
50
42
39
91
74
68
63
56
55
88
66
60
53
49
46
85
63
57
52
47
47
77
55
50
45
42
40
RF4
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
65
47
41
36
33
32
67
53
47
41
36
34
68
56
51
44
38
34
90
75
69
63
55
50
89
66
59
53
49
47
85
63
57
51
46
47
76
55
49
44
41
40
RF5
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
73
51
45
40
37
34
84
61
56
49
45
43
89
65
59
52
48
46
90
75
68
61
56
51
68
57
52
45
39
34
68
53
48
41
36
35
66
49
44
38
35
34
RF6
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
73
51
45
40
37
34
84
62
56
49
46
44
88
65
59
53
49
45
93
73
67
61
57
55
85
64
56
48
41
38
68
56
51
46
38
37
66
50
45
39
35
33
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PE42582
SP8T RF Switch
RF7
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
73
51
45
40
37
34
84
62
56
49
45
43
89
65
59
53
49
46
92
73
67
61
57
56
88
68
63
56
50
47
69
60
57
50
41
38
68
57
52
44
33
33
RF8
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
74
52
46
40
37
33
84
62
57
49
46
42
87
66
60
53
49
46
93
73
67
60
57
55
85
63
57
50
46
42
68
54
48
41
35
31
69
65
60
51
34
35
Notes:
1) Normal mod e: connect V SS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use V SS_EXT (pin 7) to bypass and disable internal negative voltage generator.
Table 6 RFC-to-Port Isolation (Cont.)
“ON”
Port Frequency Isolation (dB)
RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8
Table 7 Port-to-Port Isolation
“ON”
Port Frequency Isolation (dB)
RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8
RF1
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
65
47
41
35
31
29
67
51
45
39
34
30
84
59
53
47
43
40
91
75
70
64
57
57
89
69
63
57
52
49
89
71
65
60
47
47
88
64
60
53
45
43
RF2
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
65
46
41
35
32
29
64
45
39
34
30
27
78
55
49
43
41
38
90
75
69
65
57
58
91
70
64
58
53
50
92
75
69
64
50
50
89
74
72
63
51
51
RF3
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
67
51
46
40
37
33
65
47
41
36
33
30
69
47
41
36
33
30
94
75
70
65
57
57
90
70
64
58
53
50
92
78
72
66
51
51
91
80
79
68
54
54
PE42582
SP8T RF Switch
Page 14 DOC-76247-3 – (03/2017)
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RF4
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
68
53
47
42
38
34
67
52
46
41
36
35
63
44
39
33
30
28
90
71
66
61
54
55
89
69
64
58
53
50
89
78
71
65
50
50
91
79
80
68
54
54
RF5
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
88
79
66
57
50
47
91
80
73
66
52
53
89
70
64
58
53
51
90
71
66
61
55
56
63
44
39
33
30
28
67
52
46
41
36
35
68
52
46
40
36
33
RF6
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
90
77
65
56
49
46
92
82
75
66
52
53
89
70
65
58
53
50
91
75
70
64
59
57
69
46
41
35
33
30
65
47
42
36
32
31
67
51
45
39
35
32
RF7
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
92
85
70
57
48
46
92
77
72
64
52
51
89
70
64
58
53
50
90
76
71
65
59
57
78
55
50
44
40
39
64
45
39
34
30
27
64
45
40
35
29
30
RF8
9 kHz–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
87
69
67
56
46
42
91
73
67
61
49
49
88
69
63
57
52
49
90
75
70
64
59
56
82
59
54
47
43
41
67
51
45
39
34
30
65
47
41
35
29
29
Table 7 Port-to-Port Isolation (Cont.)
“ON”
Port Frequency Isolation (dB)
RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8
DOC-76247-3 – (03/2017) Page 15
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PE42582
SP8T RF Switch
Typical Performance Data
Figure 3Figure 20 show the typical performance data at +25 °C,VDD = 3.3V (ZS = ZL = 50), unless otherwise
specified.
Figure 3 • Insertion Loss vs. Frequency (RFC–RFX)
Figure 4 • Insertion Loss vs. Frequency Over
Temperature (RFC–RF1)
-8
-7
-6
-5
-4
-3
-2
-1
0
02468
Insertion Loss (dB)
Frequency (GHz)
RFC-RF1 RFC-RF2
RFC-RF3 RFC-RF4
RFC-RF5 RFC-RF6
RFC-RF7 RFC-RF8
-8
-7
-6
-5
-4
-3
-2
-1
0
02468
Insertion Loss (dB)
Frequency (GHz)
-40 °C +25 °C
+85 °C +105 °C
Figure 5 • Insertion Loss vs. Frequency Over VDD
(RFC–RF1)
Figure 6 • RFC Port Return Loss vs. Frequency
-8
-7
-6
-5
-4
-3
-2
-1
0
02468
Insertion Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
RF1 On RF2 On RF3 On RF4 On
RF5 On RF6 On RF7 On RF8 On
PE42582
SP8T RF Switch
Page 16 DOC-76247-3 – (03/2017)
www.psemi.com
Figure 7 • RFC Port Return Loss vs. Frequency Over
Temperature (RF1 On)
Figure 8 • RFC Port Return Loss vs. Frequency Over VDD
(RF1 On)
Figure 9 • Active Port Return Loss vs. Frequency
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
-60
-50
-40
-30
-20
-10
0
012345678
Return Loss (dB)
Frequency (GHz)
RF1 RF2 RF3
RF4 RF5 RF6
RF7 RF8
Figure 10 • RF1 Active Port Return Loss vs. Frequency
Over Temperature
Figure 11 • RF1 Active Port Return Loss vs. Frequency
Over VDD
Figure 12 • Terminated Port Return Loss vs. Frequency
(RF1 On)
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
-80
-70
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
RF2 RF3 RF4 RF5
RF6 RF7 RF8
DOC-76247-3 – (03/2017) Page 17
www.psemi.com
PE42582
SP8T RF Switch
Figure 13 • RF2 Terminated Port Return Loss vs.
Frequency Over Temperature (RF1 On)
Figure 14 • RF2 Terminated Port Return Loss vs.
Frequency Over VDD (RF1 On)
Figure 15 • Isolation vs. Frequency Over Temperature
(RF1–RF2, RF1 On)
-80
-70
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
-80
-70
-60
-50
-40
-30
-20
-10
0
02468
Return Loss (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
-80
-70
-60
-50
-40
-30
-20
-10
0
02468
Isolation (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
Figure 16 • Isolation vs.Frequency Over VDD
(RF1–RF2, RF1 On)
Figure 17 • Isolation vs. Frequency Over Temperature
(RFC–RF2, RF1 On)
Figure 18 • Isolation vs. Frequency Over VDD
(RFC–RF2, RF1 On)
-80
-70
-60
-50
-40
-30
-20
-10
0
02468
Isolation (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
-80
-70
-60
-50
-40
-30
-20
-10
0
02468
Isolation (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
-80
-70
-60
-50
-40
-30
-20
-10
0
02468
Isolation (dB)
Frequency (GHz)
2.3V 3.3V 5.5V
PE42582
SP8T RF Switch
Page 18 DOC-76247-3 – (03/2017)
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Figure 19 • IIP2 vs. RF Port Measured
60
70
80
90
100
110
120
130
140
RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8
IIP2 (dBm)
RF Port Measured
5 MHz IIP2 800 MHz IIP2
2 GHz IIP2 4 GHz IIP2
8 GHz IIP2
Figure 20 • IIP3 vs. RF Port Measured
40
45
50
55
60
65
70
75
80
RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8
IIP3 (dBm)
RF Port Measured
5 MHz IIP3 800 MHz IIP3
2 GHz IIP3 4 GHz IIP3
8 GHz IIP3
DOC-76247-3 – (03/2017) Page 19
www.psemi.com
PE42582
SP8T RF Switch
Evaluation Kit
The high-throw count RF switch evaluation kit (EVK) includes hardware required to control and evaluate the
functionality of the high-throw count switches. The high-throw count RF switch evaluation software can be
downloaded at www.psemi.com and requires a PC running Windows® operating system to control the USB
interface board. Refer to the Multi-throw Count RF Switch Evaluation Kit (EVK) User’s Manual for more infor-
mation.
Figure 21 • Evaluation Board Layout for PE42582
PE42582
SP8T RF Switch
Page 20 DOC-76247-3 – (03/2017)
www.psemi.com
Pin Information
This section provides pinout information for the
PE42582. Figure 22 shows the pin map of this device
for the available package. Table 8 provides a
description for each pin.
Figure 22 • Pin Configuration (Top View)
Table 8 Pin Descriptions for PE42582
Pin No. Pin
Name Description
1LS
Logic Select—used to determine the
definition for V1, V2, V3 and V4 pins
2RF2(1) RF port 2
3, 5, 14, 16,
18, 21, 23 GND Ground
4RF3(1) RF port 3
6RF4(1) RF port 4
7VSS_EXT(2) External VSS negative voltage control
8 VDD Supply voltage (nominal 3.3V)
9 V1 Digital control logic input 1
10 V2 Digital control logic input 2
11 V3 Digital control logic input 3
12 V4 Digital control logic input 4
13 RF5(1) RF port 5
15 RF6(1) RF port 6
17 RF7(1) RF port 7
19 RF8(1) RF port 8
20 NC(3) No connect
22 RFC(1) RF common port
24 RF1(1) RF port 1
Pad GND Exposed pad: ground for proper ope r-
ation
Notes:
1) RF pins 2, 4, 6, 13, 15, 17, 19, 22, and 24 must be at 0 VDC. The
RF pins do not require DC blo cking capacito rs for proper
operation if the 0 VDC requirement is met.
2) Use VSS_EXT (pin 7) to bypass and disable interna l n egative volt -
age genera to r. Connect VSS_EXT (pin 7) to GND (VSS_EXT = 0V)
to enable internal negative voltage generator.
3) Pin 20 (NC) can be connected to GND or left not connected exter-
nally.
DOC-76247-3 – (03/2017) Page 21
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PE42582
SP8T RF Switch
Packaging Information
This section provides packaging data including the moisture sensitivity level, package drawing, package
marking and tape-and-reel information.
Moisture Sensitivity Level
The moisture sensitivity level rating for the PE42582 in the 24-lead 4 × 4 × 0.85 mm QFN package is MSL1.
Package Drawing
Top-Marking Specification
Figure 23 • Package Mechanical Drawing for 24-lead 4 × 4 × 0.85 mm QFN
TOP VIEW BOTTOM VIEW
SIDE VIEW
RECOMMENDED LAND PATTERN
A
0.10 C
(2X)
C
0.10 C
0.05 C
SEATING PLANE
B
0.10 C
(2X)
0.10 C A B
0.05 C
ALL FEATURES
Pin #1 Corner
4.00
4.00
0.203
Ref.
0.85±0.05
0.05
2.70±0.05
0.50
0.25±0.05
(x24)
2.50
Ref.
0.40±0.05
(x24)
2.70±0.05
Chamfer
0.30 x 45°
(x20)
4.40
4.40
0.50
0.60
(x24) 0.30
(x24)
2.75
2.75
16
7
12
13 18
19
24
(x20)
Figure 24 • Package Marking Specifications for PE42582
=
YY =
WW =
ZZZZZZ =
Pin 1 indicator
Last two digits of assembly year
Assembly work week
Assembly lot code (Maximum six characters)
42582
YYWW
ZZZZZZ
PE42582
SP8T RF Switch
Page 22 DOC-76247-3 – (03/2017)
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Tape and Reel Specification
Figure 25 • Tape and Reel Specifications for 24-lead 4 × 4 × 0.85 mm QFN
Device Orientation in Tape
Pin 1
T
K0 A0
B0
P0
P1
D1
A
Section A-A
A
Direction of Feed
D0
E
W0
P2
see note 3
see
note 1
F
see note 3
A0
B0
K0
D0
D1
E
F
P0
P1
P2
T
W0
4.35
4.35
1.10
1.50 + 0.10/ -0.00
1.50 min
1.75 ± 0.10
5.50 ± 0.05
4.00
8.00
2.00 ± 0.05
0.30 ± 0.05
12.00 ± 0.30
Notes:
1. 10 Sprocket hole pitch cumulative tolerance ±0.2
2. Camber in compliance with EIA 481
3. Pocket position relative to sprocket hole measured
as true position of pocket, not pocket hole
Dimensions are in millimeters unless otherwise specified
PE42582 SP8T RF Switch
Product Specification www.psemi.com DOC-76247-3 – (03/2017)
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and
features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any
time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended
changes by issuing a CNF (Customer Notification Form).
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be
entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to
support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death
might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in
such applications.
Patent Statement
Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2017, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and
HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.
Ordering Information
Table 9 lists the available ordering codes for the PE42582 as well as available shipping methods.
Table 9 Order Codes for PE42582
Order Codes Description Packaging Shipping Method
PE42582A-X PE42582 SP8T RF switch Green 24-lead 4 × 4 mm QFN 500 units/T&R
EK42582-02 PE42582 Evaluation kit Evaluation kit 1/Box