DOC-76247-3 – (03/2017) Page 9
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PE42582
SP8T RF Switch
Switching Frequency
The PE42582 has a maximum 25 kHz switching
frequency in normal mode (pin 7 tied to ground). A
faster switching frequency is available in bypass
mode (pin 7 tied to VSS_EXT). The rate at which the
PE42582 can be switched is then limited to the
switching time as specified in Table 3.
Switching frequency describes the time duration
between switching events. Switching time is the time
duration between the point the control signal reached
50% of the final value and the point the output signal
reaches within 10% or 90% of its target value.
Spur-Free Performance
The PE42582 spur fundamental occurs around
5 MHz. Its typical performance in normal mode is
–162 dBm/Hz (pin 7 tied to ground), with 30 kHz
bandwidth. If spur-free performance is desired, the
internal negative voltage generator can be disabled
by applying a negative voltage to VSS_EXT (pin 7).
Hot-Switching Capability
The maximum hot switching capability of the PE42582
is 20 dBm above 100 MHz. Hot switching occurs
when RF power is applied while switching between
RF ports.
Thermal Data
Psi-JT (ΨJT), junction top-of-package, is a thermal
metric to estimate junction temperature of a device on
the customer application PCB (JEDEC JESD51-2).
ΨJT = (TJ – TT)/P
where
ΨJT = junction-to-top of package characterization
parameter, °C/W
TJ = die junction temperature, °C
TT = package temperature (top surface, in the
center), °C
P = power dissipated by device, Watts
Input IP2 RFC–RFX 5 MHz
100 MHz–8 GHz 75
105 dBm
dBm
Input IP3 RFC–RFX 5 MHz
100 MHz–8 GHz 53
60 dBm
dBm
RF TRISE/TFALL 10%/90% RF 100 130 ns
Settling time 50% CTRL to 0.05 dB final value 870 1400 ns
Switching time 50% CTRL to 90% or 10% of RF 227 290 ns
Notes:
1) Normal mod e: connect V SS_EXT (pin 7) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use V SS_EXT (pin 7) to bypass and disable internal negative voltage generator.
3) Insertion loss and isolation perf orman ce can be improved by a good RF gr ound on the LS pin (p in 1).
4) Defined with S-par ameters, relative insert ion ph ase (RFX –RF1) = ∠S(x+1)1 – ∠S21, where incident Por t -1 is R FC, r espo nse Po rt- 2 = RF 1 , a nd
response Port-(x+1) = RFx.
5) The input 1dB an d 0. 1dB com pr ession p oin ts a re lin ear ity figu r es o f mer it. R efe r to Table 2 for the RF input power (50Ω).
Table 3 • PE42582 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
Table 4 • Thermal Data for PE42582
Parameter Typ Unit
ΨJT 23 °C/W
ΘJA, junction-to-ambient thermal resistance 63 °C/W