V3
GaAs PIN Diode Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
Features
♦ May be Driven Directly by TTL Signals
♦ RoHS Compliant
♦ Low Series Resistance
♦ Fast Switching Speed
♦ No Reverse Bias Required
♦ RoHS Compliant
Description
Gallium Arsenide PIN diodes offer improved
performance characteristics over silicon in many
microwave semiconductor applications. These
benefits result from the intrinsic semiconductor
properties of GaAs. Its inherent high carrier
mobility results in a low resistance fast switching
device. The low carrier concentration in the I
region layer produces a near zero punch through
bias voltage. Gallium Arsenide's high band gap
also assures it will operate at high operating
temperatures.
Switching speeds in the low nanosecond range
using an inexpensive TTL buffer logic is attainable
with GaAs PIN diodes. This performance can be
achieved because GaAs PIN diodes exhibit high
impedance at a positive bias (up to .5V). Reverse
bias is not required for many GaAs PIN diode
applications. Low loss, in switch and phase shifter
circuits at frequencies up to 40 GHz is possible as
a result of low parasitic series resistance in the
conducting and non-conducting states.
M/A-COM’s Technology Solutions GaAs PIN diode
chips are also available in several different
package styles. (See page 4 of this datasheet)
1. Exceeding these limits may cause permanent damage.
Anode
Full Area Cathode
Absolute Maximum Ratings1
MIL-STD 750 Environmental Ratings
Parameter Method Level
Temp. Cycling 1051 5cycles
-65°C to +150°C
Vibration 2056 15g’s
Constant Acceleration 2006 20,000g”s
Moisture Resi st ance
(Packaged diodes) 1021 10 Days
Parameter Maximum Value
Operating Temperature -65°C to +175°C
Storage Temperature -65°C to +175°C
Power Dissipation 0.25W @ 25°C
Junction Temperature +175°C
Mounting Temperature +320°C for 10 seconds
V3
GaAs PIN Diode Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
GaAs Chip Specification @ TAMB = +25°C
Part Number
Max. Rev.
Volt.1
VR < 10 µA
VDC
Max. Cap.
1 MHz
Cj @ -10 V
pF
Max. Series Res. 2
1 GHz
RS @ 20 mA
Ω
Nominal Characteristics
Carrier Lifetime
TL @ IFOR = 10 mA
IREV = 6 mA
ηS
Switching Speed 3
7 GHz
ηS
MA4GP022-277 50 0.15 1.0 20 10
MA4GP030-277 4 100 0.06 2.0 25 15
Notes:
1. VR ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10µA.
2. Chip is mounted into case style ODS 30 ceramic package.
3. Switching speed is measured between 1 dB and 20 dB loss in a shunt mounted switch.
4. Available as chip with flying leads. Part number is MADP-000030-13930G.
Case Style 277 (Chip)
Anode
A B
C
B
Dimension Mils Millimeters
A 7 ± .5 .178 ± .013
B 11 ± 1 .279 ± .025
C 2.2 ± .3 .056 ± .008
Typical TTL Driver Circuit
V3
GaAs PIN Diode Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3
Typical Performance @ TAMB = +25°C
MA4GP022
MA4GP030
Figure 3. Typical Capacitance vs. Voltage at 1 GHz
V3
GaAs PIN Diode Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
4
Ordering Information
The GaAs Chip Specifications shown in the table on page 2 are for the stand alone die, packa ge style 277. Note that the table
lists the bare die junction capacitance and that the total capacitanc e for the base part in an alternative package will differ. The
total capacitance in an alternative package can be computed by adding the capacitance shown in the table on page 2 to the
parasitic capacitance of the alternativ e package as defined in the Package Parasitics table below. The base part numbers are
only availabl e in the case styles shown in the Package Style Availability table below. To order, indicate the base part number
followed by a dash and the desired p ackag e style.
For example: The MA4GP030-30 is the MA4GP030 chip in the 30 style package.
Base Part Number Package Styles
MA4GP022 137, 277
MA4GP030 30, 120, 276, 277, 1056, 1393*
Package Style Availability
Package Parasitics
Package Style Cap. (pF)
30 0.18
120 0.13
137 0.13
276 0.13
277 N/A (Chip)
1056 0.20
Inductance (nH)
0.40
0.40
0.40
0.40
N/A (Chip)
0.20
1393* See note* See note*
Style 30
Dimension Mils Millimeters
A 121 ± 4 3073 ± 102
B 62 ± 2 1575 ± 51
C 215 ± 10 5461 ± 254
D 91 ± 6 2311 ± 152
E 62 ± 2 1575 ± 51
F 62 ± 2 1575 ± 51
G 20 ± 4 508 ± 102
H 81 ± 2 2057 ± 51
A
B
Style 120
Dimension Mils Millimeters
A 53 ± 2 1346 ± 51
B 45 ± 5 1143 ± 127
Alternative Package Styles
Note: Chip with flying leads. Inductance and capacitance will
vary according to final lead length after installation.
B
H
A
C
F
G
D
E
*Note:To order the MA4GP030 chip with flying leads
use part number MADP-000030-13930G.
V3
GaAs PIN Diode Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
5
Alternative Package Styles (cont’d)
Cathode
A
B C
Style 137 Dimension mils mm
A 100 ± 10 2540 ± 254
B 20 ± 2 508 ± 51
C 100 ± 5 2540 ± 127
D 4 ± 1 102 ± 25
E 50 max. 1270 max.
F 14 max. 356 max.
Cathode
A
A
B
D
C
E F
Style 1056
Dimension mils mm
A 70 ± 5 1778 ± 127
B 37 ± 4 940 ± 102
C 33 ± 3 838 ± 76
D 15 ± 2 381 ± 51
E 12 ± 2 305 ± 51
F 48 ± 5 1219 ± 127
Dimension mils mm
A 15 ± 5 381 ± 127
B 45 ± 5 1143 ± 127
C 5 max. 127 max.
D 53 ± 2 1346 ± 51
E 200 min. 5080 min.
F 20 ± 1 508 ± 25
Style 1393
A
Full Area Cathode
Anode
B
C
D
B
E
Dimension mils mm
A 300 ± 50 7.62 ± 1.27
B 12 ±1 0.305 ± 0.025
C 5 ± 1 0.127 ± 0. 025
D 0.25 ± .05 0.0064 ± 0.0013
E 7 ± 1 0.178 ± 0.025
Style 276
E
F
A B
C D
D
E
F
V3
GaAs PIN Diode Chips
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
6
Die Handling and Mounting Information
Handling: All semiconductor chips should be handled with care to avoid damage or contamination
from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickups is
strongly recommended for individual components. Bulk handling should ensure that abrasion and
mechanical shock are minimized.
Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform or electrically
conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must be free of
contamination and should have a surface flatness of < ±0.002”.
Eutectic Die Attachment Using Hot Gas Die Bonder: A work surface temperature of 255oC is
recommended. When hot forming gas is applied, the work area temperature should be approximately
290oC. The chip should not be exposed to temperatures greater than 320oC for more than 10
seconds.
Eutectic Die Attachment Using Reflow Oven: See Application Note M538 pgs 13&14, “Surface
Mounting Instructions” at www.macomtech.com for recommended time-temperature profile.
Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive,
silver epoxy, approximately 1–2 mils in thickness, should be used to minimize ohmic and thermal
resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to
ensure full area coverage. Cure conductive epoxy per manufacturer’s schedule. Typically 150°C for
1 hour.
Wire and Ribbon Bonding: It is recommended that thermo-compression or thermo-sonic bonding
be used with little or no ultrasonic power. The wire or ribbon used should be smaller than the anode
contact diameter. A bonder heat stage temperature setting of 200oC, tool tip temperature of 150°C
and a force of 18 to 50 grams is suggested. If ultrasonic scrubbing is necessary, the amplitude
should be adjusted to the minimum level required to achieve a good bond. Use of excessive energy
may cause the GaAs to fracture and the metallization on the anode to delaminate from the chip.
For more detailed handling and assembly instructions, see Application Note M541,
“Bonding and Handling Procedures for Chip Diode Devices” at www.macomtech.com.
