HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002. 02.20
Page No. : 1/3
HTIP29C HSMC Produc t Specification
HTIP29C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP29C is designed for use in general purpose amplifier and
switching applica tions.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper atur e............................................................................................ -55 ~ +150 °C
Junction Temper ature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 30 W
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 1 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE= 0
BVCEO 100 - - V IC=30mA, IB=0
ICES - - 200 uA VCE=100V, IB=0
ICEO - - 300 uA VCE=60V, IB=0
IEBO - - 1 mA VEB=5V
*VCE(sat) - - 0.7 V IC=1A, IB=125mA
*VBE(on) - - 1.3 V IC=1A, VCE=4V
*hFE1 40 - - IC=0.2A, VCE= 4V
*hFE2 15 - 75 IC=1A, VCE=4V
fT 3 - - MHz IC=0.2A, VCE=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002. 02.20
Page No. : 2/3
HTIP29C HSMC Produc t Specification
Characteristics Curve
Current G ain & Col lect or Current
10
100
1000
1 10 100 1000
Coll e c tor Curr e nt I
C
(mA)
hFE
hFE @ VCE=4V
25oC
75oC
125oC
Saturation Voltage & Collector Curren t
10
100
1000
1 10 100 1000
Coll e c tor Curr e nt-I
C
(mA)
Saturation Voltage (mV)
VCE(sat) @ I C=8IB
25oC
75oC
125oC
ON Vol tage & Collector Cur rent
100
1000
1 10 100 1000
Coll e c tor Curr e nt-I
C
(mA)
O N Voltage ( mV)
V
BE(ON)
@ V
CE
=4V
25
o
C
75
o
C
125
o
C
Switchin g Time & Collector Current
0.1
1.0
10.0
0.1 1.0 10.0
Coll e c tor Cur rent (A)
Switching Times ( us)...
Tstg
Ton
Tf
VCC=30V , IC=10IB1=-10IB2
Capacit ance & Reverse-Biased Volt age
10
100
1000
0.1 1 10 100
R evers e- Biased Voltage ( V)
Capacitanc e ( pF)
Cob
Safe Oper atin g Area
10
100
1000
10000
100000
1 10 100 1000
Forward Volt age - V
CE
(V)
Collector Current-I
C
(mA)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002. 02.20
Page No. : 3/3
HTIP29C HSMC Produc t Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead : 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
HIP
29C
T
