62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701 No. A0747-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
2SK4125
N-Channel Power MOSFET
600V, 17A, 610mΩ, TO-3P-3L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1 : Gate
2 : Drain
3 : Source
TO-3P-3L
15.6 1.5
0.6
2.0
1.0
123
18.4
10.0
16.76
5.45 5.45
3.2 7.0
3.5 5.0
19.9
20.0
3.0
4.8
13.6
1.4
Features
• ON-resistance RDS(on)=0.47Ω (typ.)
• Input capacitance Ciss=1200pF (typ.)
• 10V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID17 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 52 A
Allowable Power Dissipation PD2.5 W
Tc=25°C (Our ideal heat dissipation condition)*1 170 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *2 EAS 78.8 mJ
Avalanche Current *3 IAV 17 A
*1 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=17A (Fig.1)
*3 L≤500μH, single pulse
Package Dimensions
unit : mm (typ)
7539-002
Ordering number : ENA0747B
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking Electrical Connection
K4125
LOT No.
1
3
2
2SK4125-1E
2SK4125
No. A0747-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS V
DS=480V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward Transfer Admittance | yfs |VDS=10V, ID=8.5A 4.5 9 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=7A, VGS=10V 0.47 0.61 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 1200 pF
Output Capacitance Coss 220 pF
Reverse Transfer Capacitance Crss 50 pF
Turn-ON Delay Time td(on)
See Fig.2
26.5 ns
Rise Time tr 82 ns
Turn-OFF Delay Time td(off) 145 ns
Fall Time tf52 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=17A 46 nC
Gate-to-Source Charge Qgs 8.3 nC
Gate-to-Drain “Miller” Charge Qgd 26.7 nC
Diode Forward Voltage VSD IS=17A, VGS=0V 1.0 1.3 V
Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SK4125-1E TO-3P-3L 30pcs./magazine Pb Free
50Ω
≥50Ω
RG
VDD
L
2SK4125
10V
0V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
ID -- VDS ID -- VGS
IT11753 IT11754
0
0
30
35
25
20
15
10 3052515 20
10
5
0
40
30
35
25
20
15
10
5
020181641221068 14
15V
Tc=25°CVDS=20V
VGS=5V
6V
Tc= --25°C
25°C
75°C
8V
10V
PW=10μs
P.G RGS=50Ω
G
S
D
ID=8.5A
RL=23.5Ω
VDD=200V
VOUT
2SK4125
VIN
10V
0V
VIN
D.C.≤0.5%
2SK4125
No. A0747-3/7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance, | yfs | -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
| yfs | -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT11755 IT11756
--50 --25 0 25 50 75 100 125 150
0
1.4
0.4
1.0
0.6
0.2
1.2
0.8
IT11758
0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
10
7
5
3
2
5
3
2
7
5
3
2
2
1.0
7
5
3
IT11757
25°C
--25
°
C
Tc=75°C
0.1 23 57 23
1.0 23 5 5710
1.0
10
2
3
5
7
5
7
3
2
3VDS=10V
Tc= --25°C
75°C
VGS=0V
3
0
2.0
1.8
1.0
1.4
151359711
0.6
0.2
1.2
1.6
0.8
0.4
ID=7A
Tc=75°C
25°C
--25°C
ID=7A, VGS=10V
SW Time -- ID
IT11759
10
100
3
2
2
5
7
1000
3
5
7
0.1 1.0
23 5 23 572 10
357
VDD=200V
VGS=10V
td(off)
tr
tf
td(on)
0
7
100
10
1000
5
3
2
7
5
3
2
10000
7
5
3
2
5052535451510 30 4020
IT11760
f=1MHz
Ciss
Coss
Crss
25
°
C
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
A S O
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
IT12416
0
0
1
2
3
4
5
6
7
8
5040
10
9
10 20 30
VDS=200V
ID=17A
IT16834
0.01
0.1
1.0
10μs
100μs
100ms
10ms
1ms
DC operation
0.1 1.0 10 100 23 5723 5723 5723 57 1000
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
100
Operation in
this area is
limited by RDS(on).
IDP=52A(PW
≤
10μs)
ID=17A
Tc=25°C
Single pulse
2SK4125
No. A0747-4/7
0
020 40 60 80 100 120
3.0
2.5
140 160
2.0
1.5
1.0
0.5
IT12240
0
020 40 60 80 100 140120
100
80
120
140
160
170
180
60
40
20
200
160
IT12241
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
PD -- Ta PD -- Tc
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
2SK4125
No. A0747-5/7
Magazine Specifi cation
2SK4125-1E
2SK4125
No. A0747-6/7
Outline Drawing
2SK4125-1E
Mass (g) Unit
1.8
* For reference
mm
2SK4125
PS No. A0747-7/7
Note on usage : Since the 2SK4125 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf.
SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
