Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 2.1
www.infineon.com 2018-10-12
IGT60R070D1
IGT60R070D1
600V CoolGaN™enhancement-mode Power Transistor
Features
•Enhancement mode transistor – Normally OFF switch
•Ultra fast switching
•No reverse-recovery charge
•Capable of reverse conduction
•Low gate charge, low output charge
•Superior commutation ruggedness
•Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
Benefits
•Improves system efficiency
•Improves power density
•Enables higher operating frequency
•System cost reduction savings
•Reduces EMI
Applications
Industrial, telecom, datacenter SMPS based on the half-bridge topology
(half-bridge topologies for hard and soft switching such as Totem pole PFC,
high frequency LLC).
For other applications: review CoolGaN™reliability white paper and contact
Infineon regional support
Table 1 Key Performance Parameters at Tj= 25 °C
Table 2 Ordering Information
Parameter
Value
Unit
V
DS,max
600
V
R
DS(on),max
70
m
Q
G,typ
5.8
nC
I
D,pulse
60
A
Q
oss
@ 400
V
41
nC
Q
rr
0
nC
Type / Ordering Code Package Marking Related links
IGT60R070D1 PG-HSOF-8-3 60R070D1 see Appendix A
SK
1
1
G
G
SK
Gate 8
Drain drain contact
Kelvin Source 7
Source 1,2,3,4,5,6
Final Data Sheet 2 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
Table of Contents
Features …..……………………………………………………………………………………………………………….. 1
Benefits …..…………………………………………………………………………………………………………………1
Applications...........................................................................................................................................................1
Table of Contents ..................................................................................................................................................2
1 Maximum ratings ...............................................................................................................................3
2 Thermal characteristics .....................................................................................................................4
3 Electrical characteristics ....................................................................................................................5
4 Electrical characteristics diagrams ....................................................................................................7
5 Test Circuits .....................................................................................................................................13
6 Package Outlines .............................................................................................................................14
7 Appendix..........................................................................................................................................15
8 Revision History ...............................................................................................................................16
Final Data Sheet 3 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
1 Maximum ratings
at Tj= 25 °C, unless otherwise specified.
Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact
your local Infineon sales office.
Table 3 Maximum ratings
1All devices are 100% tested at IDS = 12.2 mA to assure VDS ≥ 800 V
2Limits derived from product characterization, parameter not measured during production
3Ensure that average gate drive current, IG,avg is ≤ 20 mA. Please see figure 27 for IG,avg, IG,pulse and IGdetails
4Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application.
5We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for
details.
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Drain Source Voltage 1VDS,max - - 600 V VGS = 0 V
Continuous current, drain source ID-
-
-
-
-
-
31
20
14
A TC= 25 °C; Tj= Tj, max
TC= 100 °C; Tj= Tj, max
TC= 125 °C; Tj= Tj, max
Pulsed current, drain source 2 3 ID,pulse - - 60 A TC= 25 °C; IG= 26.1 mA;
See Figure 3; Figure 5;
Pulsed current, drain source 3 4 ID,pulse
- - 35 A TC= 125 °C; IG= 26.1 mA;
See Figure 4; Figure 6;
Gate current, continuous 3 4 5 IG,avg - - 20 mA Tj= -55 °C to 150 °C;
Gate current, pulsed 3 5 IG,pulse - - 2000 mA Tj= -55 °C to 150 °C;
tPULSE = 50 ns, f=100 kHz
Gate source voltage, continuous 5VGS -10 - - V Tj= -55 °C to 150 °C;
Gate source voltage, pulsed 5VGS,pulse -25 - - V Tj= -55 °C to 150 °C;
tPULSE = 50 ns, f = 100 kHz;
open drain
Power dissipation Ptot - - 125 W TC= 25 °C
Operating temperature Tj-55 - 150 °C
Storage temperature Tstg -55 - 150 °C Max shelf life depends on
storage conditions.
Drain-source voltage slew-rate dV/dt 200 V/ns
Final Data Sheet 4 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
2 Thermal characteristics
Table 4 Thermal characteristics
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Thermal resistance, junction
-
case
RthJC - - 1 °C/W
Thermal resistance, junction
-
ambient
RthJA - - 62 °C/W Device on PCB, minimum
footprint
Thermal resistance, junction
-
ambient
for SMD version
RthJA - 35 45 °C/W
Device on
40mm*40mm*
1.5mm epoxy PCB FR4 with
6cm² (one layer, 70μm
thickness) copper area for
drain connection and
cooling. PCB is vertical
without air stream cooling.
Reflow soldering temperature
Tsold - - 245 °C MSL3
Final Data Sheet 5 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
3 Electrical characteristics
at Tj= 25 °C, unless specified otherwise
Table 5 Static characteristics
Table 6 Dynamic characteristics
1Parameter represents end of use leakage in applications
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Gate threshold voltage
VGS(th) 0.9
0.7
1.2
1.0
1.6
1.4
V IDS = 2.6 mA; VDS = 10 V; Tj=25 °C
IDS = 2.6 mA; VDS = 10 V; Tj=125 °C
Drain
-
Source leakage current
IDSS
-
-
1
20
100
-
µA VDS = 600 V; VGS = 0 V; Tj= 25 °C
VDS = 600 V; VGS = 0 V; Tj= 150 °C
Drain
-
Source leakage current at
application conditions1IDSSapp - 60 - μA VDS = 400 V; VGS = 0 V; Tj= 125 °C
Gate
-
Source leakage current
IGSS
-1
-1
-
-
-
-
mA VDS = 0 V; VGS = -10 V; Tj= 25 °C
VDS = 0 V; VGS = -10 V; Tj= 125 °C
Drain
-
Source on
-
state resistance
RDS(on)
-
-
0.055
0.100
0.070
-
Ω IG= 26.1 mA; ID= 8 A; Tj= 25 °C
IG= 26.1 mA; ID= 8 A; Tj= 150 °C
Gate resistance
RG,int
- 0.78 - Ω LCR impedance measurement;
f = fres ; open drain;
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Input capacitance Ciss -380 - pF VGS = 0 V; VDS = 400 V;
f = 1 MHz
Output capacitance Coss - 72 - pF VGS = 0 V; VDS = 400 V;
f = 1 MHz
Reverse Transfer capacitance Crss - 0.3 - pF VGS = 0 V; VDS = 400 V;
f = 1 MHz
Effective output capacitance,
energy related 2Co(er) - 80 - pF VDS = 0 to 400 V
Effective output capacitance,
time related 3Co(tr) - 102.5 - pF VGS = 0 V; VDS = 0 to 400 V;
Id = const
Output charge Qoss - 41 - nC VDS = 0 to 400 V
Turn- on delay time td(on) - 15 - ns see Figure 23
Turn- off delay time td(off) -
15
-ns see Figure 23
Rise time tr-
9
-ns see Figure 23
Fall time tf-
13
-ns see Figure 23
Final Data Sheet 6 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
Table 7 Gate charge characteristics
Table 8 Reverse conduction characteristics
1Excluding Qoss
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Gate charge QG-5.8 - nC IGS = 0 to 10 mA; VDS= 400 V;
ID= 8 A
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Source-Drain reverse voltage VSD -2.2 2.5 V VGS = 0 V; ISD = 8 A
Pulsed current, reverse IS,pulse -- 60 A IG= 26.1 mA
Reverse recovery charge Qrr 1-0 - nC IS= 8 A, VDS = 400 V
Reverse recovery time trr -0 - ns
Peak reverse recovery current Irrm -0 - A
Final Data Sheet 7 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
4 Electrical characteristics diagrams
at Tj= 25 °C, unless specified otherwise
Figure 1 Power dissipation Figure 2 Max. transient thermal impedance
P
tot
=f(T
c
) Z
thJC
=f(t
p
, D)
Figure 3 Safe operating area Figure 4 Safe operating area
I
D
=f(V
DS
); T
C
= 25 °C I
D
=f(V
DS
); T
C
= 125 °C
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
PTOTAL (W)
TCASE (°C)
0.001
0.01
0.1
1
0.01 0.10 1.00 10.00 100.00 1000.00
ZthJC (°C/W)
Rectangular Pulse Duration (ms)
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
D=
0.01
0.1
1
10
100
1 10 100 1000
ID(A)
VDS (V)
tp = 10 μs
DC
tp = 100 μs
tp = 1 ms
tp = 20 ns
Limited by
RDS(on)
0.01
0.1
1
10
100
1 10 100 1000
ID(A)
VDS (V)
tp = 10 μs
DC
tp = 100 μs
tp = 1 ms
tp = 20 ns
Limited by
RDS(on)
Final Data Sheet 8 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
Figure 5 Repetitive safe operating area1Figure 6 Repetitive safe operating area1
Tc = 25 °C; T
j
≤ 150 °C Tc = 125 °C; T
j
≤ 150 °C
Figure 7 Typ. output characteristics Figure 8 Typ. output characteristics
I
D
=f(V
DS
,IG); T
j
= 25 °C I
D
=f(V
DS
,IG); T
j
= 125 °C
1Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application.
0
10
20
30
40
50
60
70
0 100 200 300 400 500 600
ID[A]
VDS [V]
Limited by
RDS(on)
tp ≤ 20ns
0
10
20
30
40
50
60
70
0 100 200 300 400 500 600
ID[A]
VDS [V]
Limited by
RDS(on)
tp ≤ 20ns
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10
ID[A]
VDS [V]
IG=0.1 mA
IG=0.26 mA
IG=1 mA
IG=2.6 mA
IG=10 mA
IG=26.1 mA
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10
ID[A]
VDS [V]
IG=0.1 mA
IG=0.26 mA
IG=1 mA
IG=2.6 mA
IG=10 mA
IG=26.1 mA
Final Data Sheet 9 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
Figure 9 Typ. Drain-source on-state resistance Figure 10 Drain-source on-state resistance
R
DS(on)
=f(ID,IG); T
j
= 125 °C R
DS(on)
=f(T
j
); ID= 8 A
Figure 11 Typ. gate characteristics forward Figure 12 Typ. gate characteristics reverse
I
GS
=f(V
GS
,T
j
); open drain I
GS
=f(V
GS
); T
j
= 25 °C
80
100
120
140
160
180
200
0 10 20 30 40 50 60
RDS(on) (mΩ)
ID[A]
IG=0.1 mA
IG=0.26 mA
IG=1 mA
IG=2.6 mA
IG=10 mA
IG=26.1 mA
0
20
40
60
80
100
120
140
-50 0 50 100 150
RDS(on) [mΩ]
Tj[oC]
IG= 26.1 mA
VGS = 3 V
0
50
100
150
200
250
300
350
400
450
500
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
IGS (mA)
VGS (V)
-55°C
25°C
125°C
-350
-300
-250
-200
-150
-100
-50
0
-25 -20 -15 -10 -5 0
IGS (mA)
VGS (V)
Final Data Sheet 10 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
Figure 13 Typ. transfer characteristics Figure 14 Typ. transfer characteristics
I
D
,
I
G
=f(V
GS
); VDS = 8 V; T
j
= 25 °C I
D
,
I
G
=f(V
GS
); VDS = 8 V ; T
j
= 125 °C
Figure 15 Typ. channel reverse characteristics Figure 16 Typ. channel reverse characteristics
V
DS
=f(ID, VGS); T
j
= 25 °C V
DS
=f(ID, VGS); T
j
= 125 °C
0
5
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5
I
G
(mA)
ID(A)
VGS (V)
0
5
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5
I
G
(mA)
ID(A)
VGS (V)
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-8 -7 -6 -5 -4 -3 -2 -1 0
ID(A)
VDS (V)
0
V
-1V
-2V
-3V
-4V
-5V VGS
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-8 -6 -4 -2 0
ID(A)
VDS (V)
0
V
-1V
-2V
-3V-4V
-5V VGS
Final Data Sheet 11 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
Figure 17 Typ. channel reverse characteristics Figure 18 Typ. channel reverse characteristics
I
D
=f(VDS, VGS); T
j
= 25 °C I
D
=f(VDS, VGS); T
j
= 125 °C
Figure 19 Typ. gate charge Figure 20 Typ. capacitances
VGS = f(QG); VDCLINK = 400 V; ID= 8 A CxSS = f(VDS)
0
10
20
30
40
50
60
0 2 4 6 8
IS(A)
V
SD
(V)
0V
+4V
0
10
20
30
40
50
60
0246810
IS(A)
V
SD
(V)
0V
+4V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 1 2 3 4 5 6
VGS (V)
Q (nC)
Ciss
Coss
Crss
0.1
1.0
10.0
100.0
1,000.0
0 100 200 300 400 500
C (pF)
VDS (V)
Final Data Sheet 12 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
Figure 21 Typ. output charge Figure 22 Typ. Coss stored Energy
QOSS = f(VDS) EOSS = f(VDS)
0
5
10
15
20
25
30
35
40
45
50
0 100 200 300 400 500
QOSS (nC)
VDS (V)
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500
EOSS (µJ)
VDS (V)
Final Data Sheet 13 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
5 Test Circuits
Figure 23
Switching times with inductive load
Figure 24
Switching times waveform
G
SK
S
D
RSS
RON
ROFF
CG
G
SK
S
D
RSS
RON
ROFF
CG
T2
T1
L
400V
VDS
ID
+
ID= 8A, RON = 10 Ω; ROFF = 10 Ω; RSS = 820 Ω; CG= 2 nF;
DRV = 12V
Figure 25
Reverse Channel Characteristics Test
Figure 26
Typical Reverse Channel Recovery
G
SK
S
D
RSS
RON
ROFF
CG
G
SK
S
D
RSS
RON
ROFF
CG
T2
T1
L
400V
VDS
ID
+
ID= 8A, RON = 10 Ω; ROFF = 10 Ω; RSS = 820 Ω; CG= 2 nF;
DRV = 12V The recovery charge is QOSS only, no additional Qrr
Figure 27 Gate current switching waveform
IG, avg
t
IG,pulse
IG
t
Final Data Sheet 14 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
6 Package Outlines
Figure 28 PG-HSOF-8-3 Package Outline, dimensions (mm)
Final Data Sheet 15 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
7 Appendix A
Table 9 Related links
•IFX CoolGaNTM webpage: www.infineon.com/why-coolgan
•IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability
•IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan
•IFX CoolGaNTM applications information:
owww.infineon.com/gan-in-server-telecom
owww.infineon.com/gan-in-wirelesscharging
owww.infineon.com/gan-in-audio
owww.infineon.com/gan-in-adapter-charger
Final Data Sheet 16 Rev. 2.1
2018-10-12
IGT60R070D1
600V CoolGaN™enhancement
-
mode Power Transistor
8 Revision History
Major changes since the last revision
2.0 2018-04-24 Final version release
2.1 2018-10-12 Updated application section; added Appendix A and Fig. 27; updated maximum
rating table footnotes, switching times and figures.
Revision
Date
Description of change
Published by
Infineon Technologies AG
81726 München, Germany
© 2018 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
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authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
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Edition 2018-10-12
ifx1
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