SG S- THOMSON eee : PSM LE Te ee a ahaa atiahing piece 74C D i ?92%937? 0007742 T 7 78C 07782 TS 035 FA-+ TS 835 FA FAST SWITCHING THYRISTORS THYRISTORS RAPIDES OF De 7-25-/7 ~D oo . . woot - IT(AMS) = 35 A/ Tease = 60C SCR designed for high frequency power ~~" "= . ( ) switching applications VoRM @ VonmM= Varn up to 800 V. 50V.< = < e00v @ Glass passivated chips. @ High stability and reliability. VRRM i i/dt /dt ratings. @ High di/dt and dv/dt ratings. tq<20 us Thyristors congus pour des applications Case . +0 48 metal (CB-267) de puissance hautes frquences. . Boitier e VoRM= Vary iusqua 800 V. @ Pastillas glassives. @ Grande stabilit des caractristiques. 5 @ di/dt et dv/dt levs. J ABSOLUTE RATINGS (LIMITING VALUES) , VALEURS LIMITES ABSOLUES D'UTILISATION Symbol Value Unit RMS on-state current* IT(RMS) 35 A Courant efficace a l'tat p 1 (RMS) @ Tease = 60C Mean on-state current* tiAV) 22, A Courant moyen a Itat passant* @Tecase = 60C Non repetitive surge peak on-state current** ITSM 262 (t= 83ms) A Courant non rplitif de surcharge crte ITsm 250 (t=10 ms) A accidentelle a I'tat passant** @yj <= 120C 12 t for fusing 2 312 _ (t=10 ms) Aes Valeur de la constante |? t @Tj < 120C Gritical rate of rise of on-state current*** . - Vitesse critique de croissance du courant a l'tat passant*** di/dt 400 A/us Storage and operating junction temperatures + 150 o Tempratures extrmes de stockage et de . Tstg a 0 : + 120 C fonction en fonctionnement j . @Tj = 120C TS 035 FA TS 135 FA TS 235 FA TS 435 FA TS 635 FA TS 835 FA VprM = VRAM ) 50 100 200 400 600 800 Thermal resistances i Rsistances thermiques Symbol Value Unit Junction to case for D.C. . Jonction-boitier en continu Rih (-c) 118 ow Contact (case to heatsink) Contact (boftier-radiateur) Pith (c-h) 0,40 *CIw * Single phase circuit, 180 conduction angle * Circuit monophas, angle de conduction 180 *** Gate supply 20v/20N -tr< *** Gnrateur de gachelte ** Half sine wave ** Demi-oride sinusoidale 0,1 us - Half sine wave of 6,3 ns Demi-sinusoide duly 1984 - 1/6 THOMSON SEMICONDUCTORS 45, avenue de l'Europe - - 78140 VELIZY - France Tl. :946.97.19/ Tlex : 698 866 F 219 1X 2 THOMSON COMPONENTSS G S-THOMSON | 7ac D ff 7329237 ooo7783 1 78c 07783 =D 1 1-25-17 * TS 035 FA~ TS 835 FA. GATE CHARACTERISTICS (Maximum values) CARACTERISTIQUES DE GACHETTE (Valeurs maximates) Pgm =60 W (t= 500 us) IFGM = 10A (t= 500 us) . VRGM=5V P@jay) = 1 W VeGM = 15 V (t= 500 ps) . ELECTRICAL CHARACTERISTICS CARACTERISTIQUES ELECTRIQUES Value . Symbol , Unit Test conditions min typ max lat 480 mA Tj = 25C Vp = 12V RL = 330 ty 2 20 ws Vet 3 v T= 25C Vp = 12V RL = 3320 tp 220 ps Vap 0,2 Vv Tj = 120C Vp = VprRM RAL = 3,3k0 tH 70 mA T= 25C Ip = O5A Gate open VIM 24 Vv T= 25C itu = 70A tp = 10 ms IDRM 6 mA T= 120C Vpre specified IRRM 6 mA Tj = 120C Varo specitied Ti = 26C lt =70A Vp = VORM at ' Hs id = 500mA dig/dt = 5 A/us tq 20 Bs Tj = 120C = 10A VR = 75V Vp =0,67 VpRM dip/dt=30 A/ys dv/dt = 200 V/ps Gate open dv/dt* 200 V/ps Tj = 120C Linear slope up to 0,67 VporM specified | * For higher guaranteed values, please consult us. ' CASE DESCRIPTION DESCRIPTION DU BOITIER @ 2+0,2 @ 40,2 \ Cooling method : by conduction K (method C) . Ty [| Marking: type number Weight: 13,5 +19 cm rT Polarity : anode to case , . ~ Stud torque: 3,5 m A Nmin-3,8 m A Nmax | 1 O12,5 w Thread: % | wax 1/4" - 28 UNF : type N ny | | | 4H M6 on request: type N + suffix M g| 4 | | # 6&8 x . 5 : E c I t. | | | - Nt _| L - wn A | o . | 9/16" over flats 6 sided . + % ' ' 6 pans 9/16 sur plofs =| | ; xl on | | . M6 1/4 - 28 UNF 16,5 maxi TO 48 metal (CB-267) 2/6 . THOMSON SEMICONDUCTORS 220S G S-THOMSON 2BC D 3 ?72e%e3? ooo . : TS 035 FA TS 835 FA ean 3 i tO SINUSOIDAL CURRENT PULSE DATA. 7-25 ~/7 PARAMETER : Itm (A) 600 400 300 200 450 4100 50 30 403 10 ENERGY PER PULSE, Ep (md) { - 40 402 409 PULSE WIDTH, tp (ps) - FIG.4 - ENEAGY PEA PULSE FOR SINUSOIDAL PULSES. 103 PARAMETER : F (Hz) 400 400 4000 2500 5000 410000 4 402 PEAK ON-STATE CURRENT, Ipy (A) 40 402 403 PULSE WIDTH, tp (ps) FIG.2 MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PULSE WIDTH FOR Ty = 65 C. 103 PARAMETER : F (Hz) . 100 400 1000 NOTES : 2500 1. Vp = Vg = 400 Volts. 5000 2. R.C Snubber, C= 0.4 pF, 2 10000 10 R= 330. PEAK ON-STATE CURRENT, Ity (A) 40 102 403 PULSE WIDTH, ty (ps) FIG.3 ~ MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PULSE WIDTH FOR Tp = 80 C. . 3/6 THOMSON SEMICONDUCTORS 221S G S-THOMSO N Pac D i e4294e37 OOOP78S f TS 035 FA- TS 835 FA 7 TRAPEZOIDAL CURRENT PULSE DATA ~S~ / 7 103 PARAMETER : T 1 (A) s BOO = 400 S90 300 uF 40) 200 ca 450 = 4100 a 50 fi 30 40 > Oo ce ut =z Wi 4 40 402 403 PULSE WIDTH, tp (ps) FIG.4 - ENERGY PEA PULSE FOR TRAPEZOIDAL PULSES. 403 PARAMETER : g F (Hz) 400 ; = Ez 400 di/dt = 100 A/is . 4000 5 2500 ue & mB 410 _ uy 2 K di/dt Ty = " 5 tp Mx <= tu a 4/6 10 102 PULSE WIDTH, tp (ps) 1 FIG.5 MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PEAK ON-STATE CURRENT, Iyy {A} 409 40% 40 PULSE WIDTH FOA Ty = 65 C. PARAMETER : F (Hz) 400 400 4000 NOTES : 4. Vp = YA = 400 Volts. 2. A.C Snubber, C = O.4pF, R= 330. 402 403 PULSE WIDTH, tp (ps) FIG.6 - MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PULSE WIDTH FOR T, = 90 C. THOMSON SEMICONDUCTORS 222 - iS G S-THOMSON 2ac > Qf ea29237 cooz7a, 7 TS 035 FA TS 835 FA == oor, TIENT 300 4000 Vp =O ee Va = YaRM To 100 Its (A) INSTANTANEOUS ON-STATE CURRENT, Ir (A) PEAK HALF SINE WAVE ON-STATE CURRENT, 40 G eS FOR LOSS o CALCULATIONS z =100 USE : EO c Vio = 1.6 v a et ry = 40.5 mQ i 50 0 4 2 3 4 5 4 2 5 40 INSTANTANEOUS ON-STATE VOLTAGE, V7 (V) PULSE BASE WIDTH, t (ms) FIG.7 ~ MAXIMUM ON-STATE CONDUCTION FIG. - NON REPETITIVE SUB-CYCLE SURGE CHARACTERISTIC (Ty = 420 C). ON-STATE CURRENT AND It RATING (INITIAL Ty = 420 C). 250 INITIAL Tz < 120 C 200 450 100 CURRENT, Itsy (A) 50 NON REPETITIVE SUAGE PEAK ON-STATE 4 40 . 102 403 NUMBER OF CYCLES (at 50 Hz) FIG.8 - NON REPETITIVE SURGE PEAK ON-STATE CURRENT VERSUS NUMBER OF CYCLES. 5/6 THOMSON SEMICONDUCTORS 223 \S G S-THOMSON 6/6 sac ) 2429237 ooo7787 4 | 78C OT78T OD TS 035 FA~ TS 835 FA 1-25-17 MULTIPLYING FACTOR ~40 -20 0 +25 JUNCTION TEMPERATURE, Ty (C) FIG.40 - RELATIVE VARIATION OF GATE TRIGGER CURRENT AND HOLDING CURRENT VERSUS JUNCTION TEMPERATURE. 100 Pey = & = () 40 > ul o < FE at a > iw 4 -E <t oOo I 0.4 0.04 0.4 4 40 GATE CURRENT, Ig (A} FI6.44 - GATE TAIGGEA CHARACTERISTICS. 10 4074 4073 4072 -. 4974 4 40 TIME, t (s) FIG.42 - TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE. TRANSIENT THEAMAL IMPEDANCE, Ztp (C/W) THOMSON SEMICONDUCTORS 224