IN1IN2
D1D2
S1S2
V– V+
GND NC
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG201B
Dual-In-Line, SOIC and TSSOP
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-1
Improved Quad CMOS Analog Switches
22-V Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance—rDS(on): 45
Low Leakage—ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—tON: 120 ns
Low Glitching—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum T ransients
Reduced Power Consumption
Superior to DG201A/202
Space Savings (TSSOP)
Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
The DG201B/202B analog switches are highly improved
versions of the industry-standard DG201A/202. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design minimizes
switching transients. The DG201B and DG202B can handle
up to 22-V input signals, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in the
off condition.
The DG201B is a normally closed switch and the DG202B is
a normally open switch. (See Truth Table.)
Logic DG201B DG202B
0 ON OFF
1 OFF ON
Logic “0” 0.8 V
Logic “1” 2.4 V
DG201B/202B
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-2 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
ORDERING INFORMATION
Temp Range Package Part Number
40 85 C
16
-
Pin Plastic DIP
DG201BDJ
40 85 C
16
-
Pin
Plastic
DIP
DG202BDJ
40 85 C
16
-
Pin CerDIP
DG201BDK
–
40 to 85
_
C
16
-
Pin
CerDIP
DG202BDK
–
40
to
85_C
16
-
Pin Narrow SOIC
DG201BDY
16
-
Pin
Narrow
SOIC
DG202BDY
16
-
Pin TSSOP
DG201BDQ
16
-
Pin
TSSOP
DG202BDQ
55 125 C
16 Pi C DIP
DG201BAK
–
55 to 125
_
C
16
-
Pin CerDIP
DG201BAK/883
–
55
to
125_C
16
-
Pin
CerDIP
DG202BAK
DG202BAK/883
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa VS, VD(V–) –2 V to (V+) +2 V . . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Current, Any Terminal 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) 100 mA. . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature (AK, DK Suffix) –65 to 150_C. . . . . . . . . . . . . .
(DJ, DY, DQ Suffix) –65 to 125_C. . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIPc470 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC and TSSOPd640 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIPe900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
DX
SX
V+
INX
V–
Level
Shift/
GND
V+
V–
5 V
Reg
Drive
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600
4-3
Test Conditions
Unless Specified A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full V
Drain-Source On-Resistance rDS(on) VD = 10 V, IS = 1 mA Room
Full 45
W
rDS(on) Match DrDS(on)
DS
Room 2
Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room
Full 0.01
–0.5
–5 0.5
5
A
Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room
Full 0.01
0.5
5nA
Drain On Leakage Current ID(on) VS = VD = 14 V Room
Full 0.02
0.5
10
Digital Control
Input Voltage High VINH Full
V
Input V oltage Low VINL Full
V
Input Current IINH or IINL VINH or VINL Full – – mA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Turn-On Time tON VS = 2 V
S S it hi Ti T t Ci it
Room
Full 120
ns
T urn-Off Time tOFF
S
See Switching T ime Test Circuit Room
Full 65
ns
Charge Injection Q CL = 1000 pF, Vg = 0 V
Rg = 0 WRoom 1 pC
Source-Of f Capacitance CS(off)
VS
=
0 V, f
=
1 MHz
Room 5
F
Drain-Of f Capacitance CD(off)
V
S =
0
V
,
f
=
1
MHz
Room 5 pF
Channel On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16
Off Isolation OIRR
CL
=
15 pF, RL
=
50 W
Room 90
dB
Channel-to-Channel
Crosstalk XTALK
C
L =
15
pF
,
R
L =
50
W
VS = 1 VRMS, f = 100 kHz Room 95 dB
Power Supply
Positive Supply Current I+
VIN =0or5V
Room
Full 50
50
mA
Negative Supply Current I–
V
IN =
0
or
5
V
Room
Full
m
A
Power Supply Range for
Continuous Operation VOP Full V
DG201B/202B
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-4 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
Test Conditions
Unless Specified A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 12 V, V– = 0 V
VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full V
Drain-Source
On-Resistance rDS(on) VD = 3 V, 8 V, IS = 1 mA Room
Full 90
W
Dynamic Characteristics
Turn-On Time tON VS = 8 V
S S it hi Ti T t Ci it
Room 120
ns
T urn-Off Time tOFF
S
See Switching T ime Test Circuit Room 60
ns
Charge Injection Q CL = 1 nF, Vgen= 6 V, Rgen = 0 WRoom 4 pC
Power Supply
Positive Supply Current I+
VIN =0or5V
Room
Full 50
50
mA
Negative Supply Current I–
V
IN =
0
or
5
V
Room
Full
m
A
Power Supply Range for
Continuous Operation VOP Full V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. T ypical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600
4-5
_
–20 –16 –12 –8 –4 0 4 8 12 16 20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
–15 –10 –5 0 5 10 15
0246810121416
0
25
50
75
100
125
150
175
200
225
0
0.5
1
1.5
2
2.5
rDS(on) ()
5 V
rDS(on) vs. VD and Power Supply Voltages
VD – Drain Voltage (V)
10 V
15 V
20 V
rDS(on) ()
r
DS(on) vs. VD and Temperature
VD – Drain Voltage (V)
125_C
85_C
25_C
–55_C
V+ = 15 V
V– = –15 V
rDS(on) ()
r
DS(on) vs. VD and Single Power Supply Voltages
VD – Drain Voltage (V)
VTH ()V
Input Switching Threshold vs. Supply Voltage
4 6 8 101214161820
V+ = 5 V
7 V
10 V 12 V 15 V
30
20
10
60
70
80
90
100
250
IS(off), ID(off)
ID(on)
–20 –15 –10 –5 0 5 10 15 20
80
60
40
20
0
–20
–40
–60
–80
Temperature (_C)
Leakage Currents vs. Analog Voltage
IS,ID– Current (pA)
–55 25 455–15 65
1 nA
100 pA
10 pA
–35
1 pA 85 105 125
V+ = 15 V
V– = –15 V
VS, VD = 14 V
IS(off), ID(off)
Temperature (_C)
Leakage Currents vs. Temperature
– CurrentI , I
SD
V+ Positive Supply (V)
V+ = 22 V
V– = –22 V
TA = 25_C
DG201B/202B
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-6 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
_
02 4 6 8 101214161820
100
200
300
400
500
V– = 0 V
ton
toff
Switching T ime (ns)
Switching Time vs. Single Supply Voltage
0
100
200
300
400
ton
toff
Switching T ime (ns)
Switching Time vs. Power Supply Voltage
04812 16 20
–15 –10 –5 0 5 10 15
30
20
10
0
–10
–20
–30
V+ = 15 V
V– = –15 V V+ = 12 V
V– = 0 V
Q – Charge (pC)
QS, QD – Charge Injection vs. Analog Voltage
10 k 100 k 1 M 10 M
40
50
60
70
80
90
100
110
120 Off Isolation vs. Frequency
OIRR (dB)
V+ = 15 V
V– = –15 V
RL = 50
1 k 10 k 100 k 1 M
4
3
2
1
0
I+ – Supply Current (mA)
Supply Current vs. Switching Frequency
V+ – Positive Supply (V) V+, V– Positive and Negative Supplies (V)
VANALOG – Analog V oltage (V)
f – Frequency (Hz)
f – Frequency (Hz)
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-7
FIGURE 2. Switching T ime
FIGURE 3. Off Isolation
50%
0 V
3 V
tOFF
tON
VO
tr <20 ns
tf <20 ns
Logic
Input
Switch
Output
90%
CL
35 pF
RL
1 kW
VO = VSRL + rDS(on)
RL
VS = +2 V VO
V–
V+
IN
SD
3 V
–15 V
GND
+15 V
S
IN RL
D
Rg = 50 W
VSVO
0V, 2.4 V
Off Isolation = 20 log VS
VO
V+
–15 V
GND V– C
C
+15 V
IN1
0V, 2.4 V
VO
+15 V
–15 V
GND
RL
V+
V–
NC
XTALK Isolation = 20 log
C
VS
C
VO
0V, 2.4 V
50 W
VSS1
IN2
S2
Rg = 50 W
D1
D2
C = RF bypass
FIGURE 4. Channel-to-Channel Crosstalk
FIGURE 5. Charge Injection
CL
1000 pF
Vg3 V
D
V+
V–
Rg
–15 V
GND
IN
SVO
+15 V
VO
DVO
INXON ONOFF
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
DG201B/202B
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-8 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
FIGURE 6. Sample-and-Hold
LM101A
+15 V
–15 V
30 pF
+15 V
–15 V
V+
V– DG201B
50 pF
1000 pF
J202
J500
J507
+15 V
2N4400
–15 V
VIN VOUT
1 kW
200 W
5 MW
5.1 MW
Aquisition T ime = 25 ms
Aperature T ime = 1 ms
Sample to Hold Offset = 5 mV
Droop Rate = 5 mV/s
Logic Input
Low = Sample
High = Hold
–
+
fC1 fC2 fC3
TTL
Control
150 pF
1500 pF
+15 V
DG201B GND
30 pF
LM101A
+15 V
–15 V
1 10 100 1 k 10 k 100 k 1 M
–40
0
160
120
80
Voltage Gain – dB
fC4
Select
fC3
Select
fC2
Select
fC1
Select
R1 = 10 kW
R2 = 10 kW
R3 = 1 MW
VOUT
V1
V–
C4
C3
C2
C1
fL1
fC4
fL2 fL3 fL4
AL (V oltage Gain Below Break Frequency) = = 100 (40 dB)
R3
R1
fC (Break Frequency) = 1
2pR3CX1
2pR1CX
fL (Unity Gain Frequency) =
Max Attenuation = rDS(on)
10 kW
–47 dB
0.015 mF
0.15 mF
FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency
–15 V
–
+
40
f – Frequency (Hz)
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-9
FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains
Gain = Gain 1 (x1)
Gain 2 (x10)
Gain 3 (x100)
Gain 4 (x1000)
–15 V
+15 V
–15 V
GND
DG419
30 pF
+15 V
+15 V
–15 V DG202B
Logic High = Switch On
+
–
LM101A
RF + RG
RG
VIN1
VIN2
CH
RF1
18 kRF1
9.9 kRF1
100 k
RG3
100
RG2
100
RG1
2 k
V+
V–
GNDV–
+5 V
VL
