Order this document by MJE15028/D SEMICONDUCTOR TECHNICAL DATA !# ! " ! . . . designed for use as high-frequency drivers in audio amplifiers. * DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 120 Vdc (Min) -- MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) -- MJE15030, MJE15031 * High Current Gain -- Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc * TO-220AB Compact Package *Motorola Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120 - 150 VOLTS 50 WATTS MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO VCB Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous -- Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range MJE15028 MJE15029 MJE15030 MJE15031 Unit 120 150 Vdc 150 Vdc 120 VEB IC 5.0 Vdc 8.0 16 Adc IB PD 2.0 Adc 50 0.40 Watts W/_C PD 2.0 0.016 Watts W/_C TJ, Tstg - 65 to + 150 _C CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RJC 2.5 _C/W Thermal Resistance, Junction to Ambient RJA 62.5 _C/W PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 120 150 -- -- -- -- 0.1 0.1 -- -- 10 10 -- 10 40 40 40 20 -- -- -- -- Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) VCEO(sus) Vdc MJE15028, MJE15029 MJE15030, MJE15031 Collector Cutoff Current (VCE = 120 Vdc, IB = 0) (VCE = 150 Vdc, IB = 0) MJE15028, MJE15029 MJE15030, MJE15031 ICEO Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) MJE15028, MJE15029 MJE15030, MJE15031 mAdc Adc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Adc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) hFE DC Current Gain Linearity (VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) (NPN TO PNP) hFE -- Typ 2 3 Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) -- 0.5 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.0 Vdc fT 30 -- MHz DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) (1) Pulse Test: Pulse Width (2) fT = hfe* ftest. 1.0 0.7 0.5 2.0%. D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 300 s, Duty Cycle 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 P(pk) ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 Figure 2. Thermal Response 2 Motorola Bipolar Power Transistor Device Data 1.0 k IC, COLLECTOR CURRENT (AMP) 20 16 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150 _C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 5 ms dc 1.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25C 0.1 0.02 2.0 MJE15028 MJE15029 MJE15030 MJE15031 5.0 10 50 20 120 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area 1000 Cib (NPN) Cib (PNP) 500 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 8.0 5.0 IC/IB = 10 TC = 25C 3.0 VBE(off) = 9 V 5V 3V 2.0 1.0 0 0 200 100 Cob (PNP) 50 30 Cob (NPN) 20 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 1.5 3.0 50 30 PNP NPN 10 5.0 0.5 0.7 1.0 2.0 3.0 f, FREQUENCY (MHz) 5.0 7.0 Figure 6. Small-Signal Current Gain Motorola Bipolar Power Transistor Device Data 10 fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) hfe , SMALL SIGNAL CURRENT GAIN 100 20 100 150 Figure 5. Capacitances Figure 4. Reverse-Bias Switching Safe Operating Area VCE = 10 V IC = 0.5 A TC = 25C 5.0 7.0 10 30 50 VR, REVERSE VOLTAGE (VOLTS) 100 90 (PNP) (NPN) 60 50 20 10 0 0.1 0.2 1.0 0.5 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 Figure 7. Current Gain-Bandwidth Product 3 NPN -- MJE15028 MJE15030 PNP -- MJE15029 MJE15031 1K 1K 100 70 50 500 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 500 200 150 VCE = 2 V VCE = 2.0 V TJ = 150C TJ = 25C TJ = - 55C 30 20 10 0.1 TJ = 150C 200 TJ = 25C 100 TJ = - 55C 50 20 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 0.1 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 IC/IB = 10 5.0 10 Figure 8. DC Current Gain NPN PNP TJ = 25C 1.8 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 1.4 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.4 VCE(sat) = IC/IB = 20 0.2 0.1 0.2 IC/IB = 10 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) VCE(sat) = IC/IB = 20 0 0.1 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltage 10 1.0 VCC = 80 V IC/IB = 10 TJ = 25C 3.0 td (NPN, PNP) tr (PNP) 0.2 t, TIME ( s) t, TIME ( s) 0.5 0.1 0.05 0.2 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Turn-On Times 4 ts (PNP) 1.0 tf (PNP) tr (NPN) 0.02 0.01 0.1 2.0 0.5 0.03 VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25C 5.0 5.0 10 0.1 0.1 tf (NPN) 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 Figure 11. Turn-Off Times Motorola Bipolar Power Transistor Device Data 10 PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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