MJE15028 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

!#   !

"   !

. . . designed for use as high–frequency drivers in audio amplifiers.

•DC Current Gain Specified to 4.0 Amperes

hFE = 40 (Min) @ IC = 3.0 Adc

hFE = 20 (Min) @ IC = 4.0 Adc

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029

VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031

•High Current Gain — Bandwidth Product

fT = 30 MHz (Min) @ IC = 500 mAdc

•TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

MJE15028

MJE15029

ÎÎÎÎ

MJE15030

MJE15031

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

120

ÎÎÎÎ

150

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

120

ÎÎÎÎ

150

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

8.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

2.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.40

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

2.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

Figure 1. Power Derating

T, TEMPERATURE (

040 60 100 120 160

PD, POWER DISSIPATION (WATTS)

2.0

1.0

3.0

80 140

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE15028/D

 Motorola, Inc. 1995









*Motorola Preferred Device

8 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

120–150 VOLTS

50 WATTS





 



CASE 221A–06

TO–220AB

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0) MJE15028, MJE15029

MJE15030, MJE15031

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

120

150

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 120 Vdc, IB = 0) MJE15028, MJE15029

(VCE = 150 Vdc, IB = 0) MJE15030, MJE15031

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0) MJE15028, MJE15029

(VCB = 150 Vdc, IE = 0) MJE15030, MJE15031

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.1 Adc, VCE = 2.0 Vdc)

(IC = 2.0 Adc, VCE = 2.0 Vdc)

(IC = 3.0 Adc, VCE = 2.0 Vdc)

(IC = 4.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain Linearity

(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)

(NPN TO PNP)

ÎÎÎÎ

hFE

ÎÎÎÎÎÎÎ

Typ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 1.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product (2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

(2) fT = hfe• ftest.

t, TIME (ms)

0.01

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

JC(t) = r(t) R

JC = 1.56

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 2. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.02 100 200

0.1

0.02

0.01

   

Motorola Bipolar Power Transistor Device Data

2.0

Figure 3. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02 20 120

BONDING WIRE LIMITED

THERMALLY LIMITED

SECOND BREAKDOWN

LIMITED @ TC = 25

IC, COLLECTOR CURRENT (AMP)

100

5.0 10 150

1.0

0.1

5 ms

MJE15028

MJE15029

MJE15030

MJE15031

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion then the curves indicate.

The data of Figures 3 and 4 is based on T J(pk) = 150

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 2.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

8.0

Figure 4. Reverse–Bias Switching

Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

0120 140

IC, COLLECTOR CURRENT (AMP)

5 V

VBE(off) = 9 V

100 110 150

3.0

130

2.0

1.0

VR, REVERSE VOLTAGE (VOLTS)

10 150

500

1000

Figure 5. Capacitances

200

10030107.05.01.5

C, CAPACITANCE (pF)

3.0

Figure 6. Small–Signal Current Gain

f, FREQUENCY (MHz)

1.0 3.0 10

100

hfe, SMALL SIGNAL CURRENT GAIN

2.0 7.0

5.00.5 5.0

0.7

NPN

Figure 7. Current Gain–Bandwidth Product

IC, COLLECTOR CURRENT (AMP)

0.5 2.0

100

fT, CURRENT GAIN–BANDWIDTH PRODUCT (MHz)

1.0 10

0.1 5.0

0.2

IC/IB = 10

TC = 25

3 V

1.5 V

PNP

(NPN)

(PNP)

VCE = 10 V

IC = 0.5 A

TC = 25

Cib (NPN)

Cob (PNP)

100

0 V

Cib (PNP)

Cob (NPN)

   

4 Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain

Figure 9. “On” Voltage

IC, COLLECTOR CURRENT (AMP)

200

100.1

150

100

0.2

10 1.0 5.02.00.5

TJ = 25

TJ = 150

0.1 IC, COLLECTOR CURRENT (AMP)

1.6

1.2

1.0

0.6

0.2

TJ = 25

V, VOLTAGE (VOLTS)

NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031

500

200

100

hFE, DC CURRENT GAIN

VCE = 2.0 V

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

VCE(sat) = IC/IB = 20

VBE(on) @ VCE = 2.0 V

1.8

1.4

1.0

0.8

0.4

IC/IB = 10

IC, COLLECTOR CURRENT (AMP)

VCC = 80 V

IC/IB = 10

TJ = 25

td (NPN, PNP)

tr (PNP)

Figure 10. Turn–On Times

IC, COLLECTOR CURRENT (AMP)

5.0

3.0

2.0

1.0

0.5

Figure 11. Turn–Off Times

0.2

0.1

VCC = 80 V

IC/IB = 10, IB1 = IB2

ts (NPN) TJ = 25

0.1

1.0

0.5

0.2

0.03

0.01

0.1

0.05

0.02

t, TIME ( s)

NPN PNP

100.1 0.2 1.0 5.02.00.5

100.2 1.0 5.02.00.5 100.1 0.2 1.0 5.02.00.5

100.2 1.0 5.02.00.5 100.1 0.2 0.3 5.02.00.5

500

TJ = 150

TJ = –55

VCE = 2 V

TJ = –55

TJ = 25

tr (NPN)

TJ = 25

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2.0 V

VCE(sat) = IC/IB = 20 IC/IB = 10

tf (NPN)

tf (PNP)

ts (PNP)

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

   

6 Motorola Bipolar Power Transistor Device Data

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MJE15028/D

*MJE15028/D*

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