GBJ2500 - GBJ2510 SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* Glass Passivated Die Construction
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V
DC
* High current capability
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
SYMBOL GBJ
2500 GBJ
2501 GBJ
2502 GBJ
2504 GBJ
2506 GBJ
2508 GBJ
2510 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current Tc = 100°C IF(AV) 25 A
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms. I2t510 A2S
Maximum Forward Voltage per Diode at IF = 12.5 A VF1.1 V
Maximum DC Reverse Current Ta = 25 °CIR10 µA
at Rated DC Blocking Voltage Ta = 100 °CIR(H) 500 µA
Thermal Resistance, Junction to Case RθJC 0.6 °C/W
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C
Note :
1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
Page 1 of 2 Rev. 03 : September 9, 2005
RATING
IFSM 300 A
Dimensions in millimeters
C3 4.9 ± 0.
2
3.9 ± 0.
2
~
∅ 3.2 ± 0.1
~
11 ± 0.2
17.5 ± 0.5
20 ±
0.3
0.7 ± 0.1
1.0 ± 0.1
2.7 ± 0.2
30 ± 0.3
7.5
±0.2
10
±0.2
7.5
±0.2
13.5 ± 0.3
RBV25
RATING AND CHARACTERISTIC CURVES ( GBJ2500 - GBJ2510 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
025 50 75 100 125 150 175
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
FORWARD VOLTAGE, VOLTS
Page 2 of 2 Rev. 03 : September 9, 2005
15
10
5
30
25
100
10
1.0
200
0
300
0
150
100
0.1
10
80
0.01
0.0
1.0
0.1
100 140
020 40 60 12
PERCENT OF RATED
REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
Tj = 25 °C
Pulse Width = 300 µs
SINGLE HALF SINE WAVE
JEDEC METHOD
T
J
=
25
°
C
Tj = 100 °C
Tj
=
25
°
C
20
250
1
2
4
6
1.2
1.4
1.8
0.4
0.6
0.8
1.0
1.6
with heatsink
Resistive or Inductive load