B0530WS
200mW, Low VFSMD Schottky Barrier Diode
Small Signal Diode
Fast switching device(Trr<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Case : Flat lead SOD-323 small outline plastic package Min Max Min Max
1.15 1.35 0.045 0.053
2.30 2.70 0.091 0.106
0.25 0.40 0.010 0.016
1.60 1.80 0.063 0.071
0.80 1.00 0.031 0.039
0.05 0.20 0.002 0.008
Package Part No. Packing
SOD-323F B0530WS RR 3K / 7" Reel
SOD-323F B0530WS RRG 3K / 7" Reel
Maximum Ratings
8.3 mS
Notes:1. Valid provided that electrodes are kept at ambient temperature
Unit (inch)
Pin Configuration
Marking Code : B3
Dimensions
F
Unit (mm)
A
B
Marking
Suggested PAD Layout
B3
B3
Type Number
Polarity : Indicated by cathode band
Weight : 4.85±0.5 mg
Rating at 25°C ambient temperature unless otherwise specified.
Ordering Information
UnitsSymbol
VVRRM
Power Dissipation
Repetitive Peak Reverse Voltage
PD
Junction and Storage Temperature Range TJ, TSTG -65 to + 125
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note )
IO
RθJA
( Singal Half -wave )
Pulse Width=
mA
°C/W
°C
E
Value
500
426
200
30
mW
SOD-323F
Maximum Ratings and Electrical Characteristics
Features
Mechanical Data
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
High temperature soldering guaranteed: 260°C/10s C
D
A5.0
Non-Repetitive Peak Forward Surge Current
IFSM
D
A
B
C
E
F
1.60
0.063
0.113
2.86
0.83
0.033
0.63
0.025
Version :F10
B0530WS
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Electrical Characteristics
Reverse Breakdown Voltage IR=
IF=
IF=
VR=
VR= 20V
VR=
Junction Capacitance
Tape & Reel specification
Type Number
500uA
100mA
15V
500mA
Forward Voltage
Reverse Leakage Current
30V
58.0
V
-
VF
IR
V(BR)
V
μA
VR=0, f=1.0MHz -CJ
Symbol
500
30 -
80
0.47
100-
Min
3.73 ± 0.10
- 0.36
UnitsMax
pF
Feed hole width D2 13.0 ± 0.20
Item Symbol Dimension(mm)
Carrier depth C 1.68 ±0.10
1.7 ± 0.10
D1 55 Min
Sprocket hole 1.5 ± 0.1
4.00 ±0.10
178 ± 1
Carrier width A
Reel outside diameter D
d
Carrier length B
Reel inner diameter
8.00 ±0.20
E 1.75 ±0.10
Punch hole position F 3.50 ±0.05
Sprocke hole pitch
Embossment center
Sprocke hole position
P0
Reel width W1 14.4 Max
P1 2.00 ±0.05
Overall tape thickness T 0.23 ± 0.05
Tape width W
T
op
Co
v
e
r T
ape
Carieer Tape
A
n
y
Additional Label
(
If Required
)
TSC label
W1
D1D2
D
T
C
dP1 P0
A
B
F
W
E
Version : F10
B0530WS
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Rating and Characteristic Curves
FIG 1 Typical Forward Characteristics
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Instantaneous Forward Current (A)
FIG 2 Forward Current Derating Curve
0
0.25
0.5
0.75
1
0 25 50 75 100 125 150
Io:Mean Forward Current (A)
FIG 3 Admissible Power Dissipation Curve
0
50
100
150
200
250
0 25 50 75 100 125 150
Power Dissipation (mW)
Ambient Temperature (°C)
Reverse Voltage (V)
FIG 4 Typical Junction Capacitance
0
10
20
30
40
50
60
70
0 5 10 15 20 25
Junction Capacitance (pF)
Reverse Voltage (V)
Terminal Temperature (°C)
Instantanceous Forward Voltage (V)
FIG 5 Typical Reverse Characteristics
0.01
0.1
1
10
100
0102030
Reverse Current (mA)
Reverse Voltage (V)
Version : F10
