Product Standards
Schottky Barrier Diode
DB2J41100L
Absolute Maximum Ratings Ta = 25 C
Note: *1 For embedded alumina substrate (substrate size: 5 cm× 5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page
°C-55 to +125Storage temperature Tstg
-40 toToprOperating ambient temperature
Internal Connection
A
UnitParameter Symbol Rating
Reverse voltage VR 40
Non-repetitive peak forward surge current *2
1of4
Unit: mm
2. Anode
Short reverse recovery time trr
Low forward voltage and low reverse leakage current
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
DB2J41100L
Silicon epitaxial planar type
For rectification
Features
Code
1. Cathode
―
Panasonic SMini2-F5-B
JEITA SC-90A
4R
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
IFSM
Junction temperature Tj
3
Forward current (average) *1 IF(AV) 1
V
°C
A
125 °C
+85
1
2
2.5
1.25
0.7
1.7
0.13
0.35
0.5
2
1
Doc No.
TT4-EA-11487
Revision.
2
Established
:
2009-10-09
Revised
:
2013-04-20
Product Standards
Schottky Barrier Diode
DB2J41100L
Electrical Characteristics Ta = 25 C 3 C
Note
)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Page
pFTerminal capacitance Ct VR = 10 V, f = 1 MHz
ns
0.50 0.58
IR VR = 40 V
VF IF = 1 A
21
Reverse recovery time *1 trr IF = 100 mA, Irr = 0.1×IR, RL = 100
of 4
Min Typ
15 100
6.8
2
Parameter Symbol Conditions UnitMax
Forward voltage V
Reverse current μA
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 μs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
I
rr
= 0.1 × I
R
Doc No.
TT4-EA-11487
Revision.
2
Established
:
2009-10-09
Revised
:
2013-04-20
Product Standards
Schottky Barrier Diode
DB2J41100L
Technical Data ( reference )
Page 3 of 4
IF - VF
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
Forward current IF (A)
Ta = 125 °C
-40 °C
25 °C
85 °C
IR - VR
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
Reverse current IR (A)
Ta = 125 °C
25 °C
-40 °C
85 °C
Ct - VR
0
20
40
60
80
100
120
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 °C
f = 1 MHz
Rth - t
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Time t (s)
Thermal resistance Rth (°C/W)
(1)
Rth(j-l) = 50 °C/W
(1) Mounted on glass epoxy print board.
(2) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
(2)
IF(AV) - Tl
0
0.25
0.5
0.75
1
1.25
0 25 50 75 100 125 150 175
Lead temperature Tl (°C)
Forward current (Average) IF(AV) (A)
DC
1/4
tp/T
1/2
Sine Wave
VR = 20 V
Tj = 125 °C
tp
T
IF
PF(AV) - IF(AV)
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1 1.2
Forward current (Average) IF(AV) (A)
Forward power dissipation (Average) PF(AV) (W)
DC
1/4
1/2
Sine Wave
tp
T
IF
Doc No.
TT4-EA-11487
Revision.
2
Established
:
2009-10-09
Revised
:
2013-04-20
Product Standards
Schottky Barrier Diode
DB2J41100L
Unit: mm
Page
SMini2-F5-B
4
4of
Land Pattern (Reference) (Unit: mm)
2.5±0.2
0.35±0.05
0.50±0.05
0.13+0.05
-0.02
0.4±0.1
0.7±0.1
(0.15)
1.25±0.10
1.7±0.1
(5°)
(5°)
0 to 0.05
1
2
2.4
0.90.9
1.1
0.9
Doc No.
TT4-EA-11487
Revision.
2
Established
:
2009-10-09
Revised
:
2013-04-20
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
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the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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