TZMC3V0-GS08 - Vishay [Semiconductors]

TZM-Series

www.vishay.com Vishay Semiconductors

Rev. 1.6, 28-Sep-11 1Document Number: 84122

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Small Signal Zener Diodes

FEATURES

• Very sharp reverse characteristic

• Low reverse current level

• Very high stability

•Low noise

•TZMC - V

Z-tolerance ± 5 %

•TZMB - V

Z-tolerance ± 2 %

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Voltage stabilization

PRIMARY CHARACTERISTICS

PARAMETER VALUE UNIT

VZ range nom. 2.4 to 75 V

Test current IZT 2.5; 5 mA

VZ specification Pulse current

Int. construction Single

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY

TZM-series TZM-series-GS18 10 000 (8 mm tape on 13" reel) 10 000/box

TZM-series TZM-series-GS08 2500 (8 mm tape on 7" reel) 12 500/box

PACKAGE

PACKAGE NAME WEIGHT MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE SENSITIVITY

LEVEL

SOLDERING

CONDITIONS

MiniMELF SOD-80 31 mg UL 94 V-0 MSL level 1

(according J-STD-020) 260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Power dissipation RthJA  300 K/W Ptot 500 mW

Zener current IZPtot/VZmA

Junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W

Junction temperature Tj175 °C

Storage temperature range Tstg - 65 to + 175 °C

Forward voltage (max.) IF = 200 mA VF1.5 V

TZM-Series

www.vishay.com Vishay Semiconductors

Rev. 1.6, 28-Sep-11 2Document Number: 84122

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Notes

• Additional measurement of voltage group TZMC9V1 to TZMC75, IR at 95 % VZmin.  35 nA at Tj = 25 °C

(1) at Tj = 150 °C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PART NUMBER

ZENER VOLTAGE

RANGE TEST CURRENT REVERSE LEAKAGE

CURRENT

DYNAMIC

RESISTANCE

TEMPERATURE

COEFFICIENT OF

ZENER VOLTAGE

VZ at IZT1 IZT1 IZT2 IR at VRIR (1) at VRZZ at IZT1 ZZK at IZT2 TKVZ

VmA μA VμA V%/K

MIN. NOM. MAX. TYP. TYP. MIN. MAX.

TZMC2V4 2.28 2.4 2.56 5 1 < 50 1 < 100 1 < 85 < 600 - 0.09 - 0.06

TZMC2V7 2.5 2.7 2.9 5 1 < 10 1 < 50 1 < 85 < 600 - 0.09 - 0.06

TZMC3V0 2.8 3.0 3.2 5 1 < 4 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMC3V3 3.1 3.3 3.5 5 1 < 2 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMC3V6 3.4 3.6 3.8 5 1 < 2 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMC3V9 3.7 3.9 4.1 5 1 < 2 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMC4V3 4 4.3 4.6 5 1 < 1 1 < 20 1 < 90 < 600 - 0.06 - 0.03

TZMC4V7 4.4 4.7 5 5 1 < 0.5 1 < 10 1 < 80 < 600 - 0.05 0.02

TZMC5V1 4.8 5.1 5.4 5 1 < 0.1 1 < 2 1 < 60 < 550 - 0.02 0.02

TZMC5V6 5.2 5.6 6 5 1 < 0.1 1 < 2 1 < 40 < 450 - 0.05 0.05

TZMC6V2 5.8 6.2 6.6 5 1 < 0.1 2 < 2 2 < 10 < 200 0.03 0.06

TZMC6V8 6.4 6.8 7.2 5 1 < 0.1 3 < 2 3 < 8 < 150 0.03 0.07

TZMC7V5 7 7.5 7.9 5 1 < 0.1 5 < 2 5 < 7 < 50 0.03 0.07

TZMC8V2 7.7 8.2 8.7 5 1 < 0.1 6.2 < 2 6.2 < 7 < 50 0.03 0.08

TZMC9V1 8.5 9.1 9.6 5 1 < 0.1 6.8 < 2 6.8 < 10 < 50 0.03 0.09

TZMC10 9.4 10 10.6 5 1 < 0.1 7.5 < 2 7.5 < 15 < 70 0.03 0.1

TZMC11 10.4 11 11.6 5 1 < 0.1 8.2 < 2 8.2 < 20 < 70 0.03 0.11

TZMC12 11.4 12 12.7 5 1 < 0.1 9.1 < 2 9.1 < 20 < 90 0.03 0.11

TZMC13 12.4 13 14.1 5 1 < 0.1 10 < 2 10 < 26 < 110 0.03 0.11

TZMC15 13.8 15 15.6 5 1 < 0.1 11 < 2 11 < 30 < 110 0.03 0.11

TZMC16 15.3 16 17.1 5 1 < 0.1 12 < 2 12 < 40 < 170 0.03 0.11

TZMC18 16.8 18 19.1 5 1 < 0.1 13 < 2 13 < 50 < 170 0.03 0.11

TZMC20 18.8 20 21.2 5 1 < 0.1 15 < 2 15 < 55 < 220 0.03 0.11

TZMC22 20.8 22 23.3 5 1 < 0.1 16 < 2 16 < 55 < 220 0.04 0.12

TZMC24 22.8 24 25.6 5 1 < 0.1 18 < 2 18 < 80 < 220 0.04 0,12

TZMC27 25.1 27 28.9 5 1 < 0.1 20 < 2 20 < 80 < 220 0.04 0.12

TZMC30 28 30 32 5 1 < 0.1 22 < 2 22 < 80 < 220 0.04 0.12

TZMC33 31 33 35 5 1 < 0.1 24 < 2 24 < 80 < 220 0.04 0.12

TZMC36 34 36 38 5 1 < 0.1 27 < 2 27 < 80 < 220 0.04 0.12

TZMC39 37 39 41 2.5 0.5 < 0.1 30 < 5 30 < 90 < 500 0.04 0.12

TZMC43 40 43 46 2.5 0.5 < 0.1 33 < 5 33 < 90 < 600 0.04 0.12

TZMC47 44 47 50 2.5 0.5 < 0.1 36 < 5 36 < 110 < 700 0.04 0.12

TZMC51 48 51 54 2.5 0.5 < 0.1 39 < 10 39 < 125 < 700 0.04 0.12

TZMC56 52 56 60 2.5 0.5 < 0.1 43 < 10 43 < 135 < 1000 0.04 0.12

TZMC62 58 62 66 2.5 0.5 < 0.1 47 < 10 47 < 150 < 1000 0.04 0.12

TZMC68 64 68 72 2.5 0.5 < 0.1 51 < 10 51 < 200 < 1000 0.04 0.12

TZMC75 70 75 79 2.5 0.5 < 0.1 56 < 10 56 < 250 < 1500 0.04 0.12

TZM-Series

www.vishay.com Vishay Semiconductors

Rev. 1.6, 28-Sep-11 3Document Number: 84122

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Additional measurement of voltage group TZMB9V1 to TZMB75, IR at 95 % VZmin.  35 nA at Tj = 25 °C

(1) at Tj = 150 °C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PART NUMBER

ZENER VOLTAGE

RANGE TEST CURRENT REVERSE LEAKAGE

CURRENT

DYNAMIC

RESISTANCE

TEMPERATURE

COEFFICIENT OF

ZENER VOLTAGE

VZ at IZT1 IZT1 IZT2 IR at VRIR (1) at VRZZ at IZT1 ZZK at IZT2 TKVZ

VmA μA VμA V%/K

MIN. NOM. MAX. TYP. TYP. MIN. MAX.

TZMB2V4 2.35 2.4 2.45 5 1 < 50 1 < 100 1 < 85 < 600 - 0.09 - 0.06

TZMB2V7 2.64 2.7 2.76 5 1 < 10 1 < 50 1 < 85 < 600 - 0.09 - 0.06

TZMB3V0 2.94 3.0 3.06 5 1 < 4 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMB3V3 3.24 3.3 3.36 5 1 < 2 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMB3V6 3.52 3.6 3.68 5 1 < 2 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMB3V9 3.82 3.9 3.98 5 1 < 2 1 < 40 1 < 90 < 600 - 0.08 - 0.05

TZMB4V3 4.22 4.3 4.38 5 1 < 1 1 < 20 1 < 90 < 600 - 0.06 - 0.03

TZMB4V7 4.6 4.7 4.8 5 1 < 0.5 1 < 10 1 < 80 < 600 - 0.05 0.02

TZMB5V1 5 5.1 5.2 5 1 < 0.1 1 < 2 1 < 60 < 550 - 0.02 0.02

TZMB5V6 5.48 5.6 5.72 5 1 < 0.1 1 < 2 1 < 40 < 450 - 0.05 0.05

TZMB6V2 6.08 6.2 6.32 5 1 < 0.1 2 < 2 2 < 10 < 200 0.03 0.06

TZMB6V8 6.66 6.8 6.94 5 1 < 0.1 3 < 2 3 < 8 < 150 0.03 0.07

TZMB7V5 7.35 7.5 7.65 5 1 < 0.1 5 < 2 5 < 7 < 50 0.03 0.07

TZMB8V2 8.04 8.2 8.36 5 1 < 0.1 6.2 < 2 6.2 < 7 < 50 0.03 0.08

TZMB9V1 8.92 9.1 9.28 5 1 < 0.1 6.8 < 2 6.8 < 10 < 50 0.03 0.09

TZMB10 9.8 10 10.2 5 1 < 0.1 7.5 < 2 7.5 < 15 < 70 0.03 0.1

TZMB11 10.78 11 11.22 5 1 < 0.1 8.2 < 2 8.2 < 20 < 70 0.03 0.11

TZMB12 11.76 12 12.24 5 1 < 0.1 9.1 < 2 9.1 < 20 < 90 0.03 0.11

TZMB13 12.74 13 13.26 5 1 < 0.1 10 < 2 10 < 26 < 110 0.03 0.11

TZMB15 14.7 15 15.3 5 1 < 0.1 11 < 2 11 < 30 < 110 0.03 0.11

TZMB16 15.7 16 16.3 5 1 < 0.1 12 < 2 12 < 40 < 170 0.03 0.11

TZMB18 17.64 18 18.36 5 1 < 0.1 13 < 2 13 < 50 < 170 0.03 0.11

TZMB20 19.6 20 20.4 5 1 < 0.1 15 < 2 15 < 55 < 220 0.03 0.11

TZMB22 21.55 22 22.45 5 1 < 0.1 16 < 2 16 < 55 < 220 0.04 0.12

TZMB24 23.5 24 24.5 5 1 < 0.1 18 < 2 18 < 80 < 220 0.04 0,12

TZMB27 26.4 27 27.6 5 1 < 0.1 20 < 2 20 < 80 < 220 0.04 0.12

TZMB30 29.4 30 30.6 5 1 < 0.1 22 < 2 22 < 80 < 220 0.04 0.12

TZMB33 32.4 33 33.6 5 1 < 0.1 24 < 2 24 < 80 < 220 0.04 0.12

TZMB36 35.3 36 36.7 5 1 < 0.1 27 < 2 27 < 80 < 220 0.04 0.12

TZMB39 38.2 39 39.8 2.5 1 < 0.1 30 < 5 30 < 90 < 500 0.04 0.12

TZMB43 42.1 43 43.9 2.5 0.5 < 0.1 33 < 5 33 < 90 < 600 0.04 0.12

TZMB47 46.1 47 47.9 2.5 0.5 < 0.1 36 < 5 36 < 110 < 700 0.04 0.12

TZMB51 50 51 52 2.5 0.5 < 0.1 39 < 10 39 < 125 < 700 0.04 0.12

TZMB56 54.9 56 57.1 2.5 0.5 < 0.1 43 < 10 43 < 135 < 1000 0.04 0.12

TZMB62 60.8 62 63.2 2.5 0.5 < 0.1 47 < 10 47 < 150 < 1000 0.04 0.12

TZMB68 66.6 68 69.4 2.5 0.5 < 0.1 51 < 10 51 < 200 < 1000 0.04 0.12

TZMB75 73.5 75 76.5 2.5 0.5 < 0.1 56 < 10 56 < 250 < 1500 0.04 0.12

TZM-Series

www.vishay.com Vishay Semiconductors

Rev. 1.6, 28-Sep-11 4Document Number: 84122

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Total Power Dissipation vs. Ambient Temperature

Fig. 2 - Typical Change of Working Voltage under Operating

Conditions at Tamb = 25 °C

Fig. 3 - Typical Change of Working Voltage vs.

Junction Temperature

Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage

Fig. 5 - Diode Capacitance vs. Z-Voltage

Fig. 6 - Forward Current vs. Forward Voltage

0 120 160

100

300

400

500

600

Ptot - Total Power Dissipation (mW)

Tamb - Ambient Temperature (°C)

200

95 9602

200

10 15 20

100

1000

- Voltage Change (mV)

- Z-Voltage (V)

95 9598

Tj = 25 °C

IZ = 5 mA

- 60 60 120 180

0.8

0.9

1.0

1.1

1.2

1.3

Ztn

- Relative Voltage Change

Tj - Junction Temperature (°C)

240

95 9599

VZtn = VZt/VZ (25 °C)

= 10 x 10-4/K

8 x 10-4/K

2 x 10-4/K

6 x 10-4/K

4 x 10-4/K

- 4 x 10-4/K

- 2 x 10-4/K

- 5

VZ - Z-Voltage (V)

95 9600

IZ = 5 mA

0 10 203040 50

TKVZ - Temperature Coefficient

of VZ (10-4/K)

10 15

100

150

200

- Diode Capacitance (pF)

- Z-Voltage (V)

95 9601

= 25 °C

= 2 V

0 0.2 0.4 0.6 0.8

0.001

0.01

0.1

100

1.0

95 9605

IF - Forward Current (mA)

VF - Forward Voltage (V)

Tj = 25 °C

TZM-Series

www.vishay.com Vishay Semiconductors

Rev. 1.6, 28-Sep-11 5Document Number: 84122

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 7 - Z-Current vs. Z-Voltage

Fig. 8 - Z-Current vs. Z-Voltage

Fig. 9 - Differential Z-Resistance vs. Z-Voltage

Fig. 10 - Thermal Response

820

95 9604

100

IZ - Z-Current (mA)

Ptot = 500 mW

Tamb = 25 °C

046 12

VZ - Z-Voltage (V)

15 20 25 30

IZ - Z-Current (mA)

VZ - Z-Voltage (V)

95 9607

Ptot = 500 mW

Tamb = 25 °C

0 101520

100

1000

95 9606

Tj = 25 °C

IZ = 1 mA

5 mA

10 mA

- Z-Voltage (V)

- Differential Z-Resistance (Ω)

100

1000

Zthp - Thermal Resistance for Pulse Cond. (KW)

tp - Pulse Length (ms) 95 9603

10-1 100101102

tp/T = 0.5

tp/T = 0.2

tp/T = 0.1

tp/T = 0.05

tp/T = 0.02

tp/T = 0.01

Single Pulse RthJA = 300 K/W

T = Tjmax - Tamb

iZM = (- VZ + (VZ

2 + 4rzj x T/Zthp) 1/2)/(2rzj)

TZM-Series

www.vishay.com Vishay Semiconductors

Rev. 1.6, 28-Sep-11 6Document Number: 84122

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80

Cathode indification

0.47 (0.019) max.

2.5 (0.098) max. 1.25 (0.49) min.

3.7 (0.146)

3.3 (0.130)

5 (0.197) ref.

2 (0.079) min.

1.6 (0.063)

1.4 (0.055)

Foot print recommendation:

* The gap between plug and glass can

be either on cathode or anode side

Document no.:6.560-5005.01-4

Rev. 8 - Date: 07.June.2006

96 12070

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Revision: 12-Mar-12 1Document Number: 91000

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