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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Features Description * Two Isolated Channels Per Package * Safety and Regulatory Approvals: - UL1577, 5,000 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 890 V Peak Working Insulation Voltage The general purpose optocouplers, MCT6, MCT61, and MCT62, have two isolated channels in a standard plastic 8-pin dual-in-line (DIP) package for density applications. Each channel consists of a gallium arsenide infrared emitting diode driving a NPN silicon planar phototransistor. For four channel applications, two packages fit into a standard 16-pin DIP socket. Applications * * * * * * * * * * * * * AC line/digital logic - isolate high voltage transients Digital logic/digital logic - eliminate spurious grounds Digital logic/AC triac control - isolate high voltage transients Twisted pair line receiver - eliminate ground loop feedthrough Telephone/telegraph line receiver - isolate high voltage transients High frequency power supply feedback control - maintain floating grounds and transients Relay contact monitor - isolate floating grounds and transients Power supply monitor - isolate transients Functional Schematic ANODE 1 Package Outlines 8 EMITTER 8 1 CATHODE 2 7 COLLECTOR CATHODE 3 6 COLLECTOR 8 8 1 ANODE 4 5 EMITTER 1 Figure 2. Package Outlines Figure 1. Schematic (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 www.fairchildsemi.com MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers August 2016 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 55/115/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1424 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1668 Vpeak VIORM Maximum Working Insulation Voltage 890 Vpeak VIOTM Highest Allowable Over-Voltage 8000 Vpeak 7 mm VPR Parameter External Creepage 7 mm 0.4 mm Case Temperature(1) 175 C Input Current(1) 60 mA 150 mW > 109 External Clearance DTI TS IS,INPUT Distance Through Insulation (Insulation Thickness) PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) Note: 1. Safety limit values - maximum values allowed in the event of a failure. (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 www.fairchildsemi.com 2 MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified. Symbol Parameter Value Unit TSTG Storage Temperature -55 to +150 C TOPR Operating Temperature -55 to +100 C Junction Temperature -55 to +125 C 260 for 10 seconds C Total Device Power Dissipation @ TA = 25C 400 mW Derate Above 25C 5.33 mW/C DC / Average Forward Input Current 60 mA Forward Current - Peak (PW = 1s, 300pps) 3 A Reverse Input Voltage 3 V Total Power Dissipation @ TA = 25C 100 mW Derate Above 25C 1.3 mW/C Continuous Collector Current 30 mA Total Power Dissipation @ TA = 25C 150 mW Derate Above 25C 2.0 mW/C TJ TSOL PD Lead Solder Temperature EMITTER (Each channel) IF IF(pk) VR PD(EMITTER) DETECTOR IC PD(DETECTOR) (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 www.fairchildsemi.com 3 MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Absolute Maximum Ratings TA = 25C unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 1.2 1.5 V EMITTER VF Input Forward Voltage IF = 20 mA VR Reverse Voltage IR = 10 A IR Reverse Leakage Current VR = 5 V CJ Junction Capacitance VF = 0 V, f = 1 MHz 3 25 0.001 V 10 A 50 pF DETECTOR BVCEO Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 30 85 V BVECO Emitter-to-Collector Breakdown Voltage IE = 100 A, IF = 0 6 13 V ICEO Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 5 CCE Capacitance 8 VCE = 0 V, f = 1 MHz 100 nA pF Transfer Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit DC CHARACTERISTICS CTR VCE(SAT) IF = 10 mA, VCE = 10 V MCT6 Current Transfer Ratio, CollectorMCT61 to-Emitter MCT62 Saturation Voltage, Collector-toEmitter IF = 5 mA, VCE = 5 V ALL 20 50 % 100 IF = 16 mA, IC = 2 mA 0.15 0.4 V Typ. Max. Unit AC CHARACTERISTICS Symbol Parameter Test Conditions Min. Non-Saturated TON Turn-On Time TOFF Turn-Off Time TR Rise Time TF Fall Time RL = 100 , IC = 2 mA, VCC = 10 V 3.0 s 3.0 s 2.4 s 2.4 s 2.4 s 25.0 s Saturated TON Turn-On Time TOFF Turn-Off Time IF = 16 mA, RL = 1.9 k, VCE = 5 V Isolation Characteristics Symbol Parameter Test Conditions Min. VISO Input-Output Isolation Voltage II-O 10 A, t = 1 Minute 5,000 CISO Isolation Capacitance f = 1 MHz RISO Isolation Resistance (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 Typ. VI-O = 500 VDC Unit VACRMS 0.5 1011 Max. pF www.fairchildsemi.com 4 MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Electrical Characteristics 1.6 1.4 VCE = 5.0V TA = 25C 1.4 1.0 NORMALIZED CTR NORMALIZED CTR 1.2 Normalized to IF = 10mA 0.8 0.6 0.4 1.0 IF = 10mA 0.8 0.6 0.2 0.0 0 5 10 15 IF - FORWARD CURRENT (mA) IF = 20mA -50 -25 0 25 50 75 100 TA - AMBIENT TEMPERATURE (C) 125 )LJ1RUPDOL]HG&75YV$PELHQW7HPSHUDWXUH 1000 101 IF = 10mA VCC =10V TA = 25C VCE = 10V 0 SWITCHING SPEED (s) 10 Normalized to IF = 10mA TA = 25C 0.4 -75 20 )LJ1RUPDOL]HG&75YV)RUZDUG&XUUHQW ICEO - COLLECTOR-EMITTER DARK CURRENT (A) IF = 5mA 1.2 10 -1 10 -2 10 -3 10 -4 100 T2)) T) 10 T21 1 T5 10 -5 10 -6 0 25 50 75 100 125 0.1 1 10 R - LOAD RESISTOR (k) 0.1 TA - AMBIENT TEMPERATURE (C) 100 )LJ6ZLWFKLQJ6SHHGYV/RDG5HVLVWRU )LJ'DUN&XUUHQWYV$PELHQW7HPSHUDWXUH 1.8 100 TA = 25C VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) VF - FORWARD VOLTATGE (V) 1.7 1.6 1.5 1.4 TA = 55C 1.3 TA = 25C 1.2 10 1 IF = 2.5mA 0.1 IF =20mA 0.01 IF =10mA 1.1 IF = 5mA TA = 100C 1.0 1 0.001 0.01 10 100 IF - LED FORWARD CURRENT (mA) )LJ/(')RUZDUG9ROWDJHYV)RUZDUG&XUUHQW (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 0.1 1 IC - COLLECTOR CURRENT (mA) 10 )LJ&ROOHFWRU(PLWWHU6DWXUDWLRQ9ROWDJH YV&ROOHFWRU&XUUHQW www.fairchildsemi.com 5 MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Typical Performance Curves TEST CIRCUIT WAVE FORMS VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE 75 721 7) 72)) Adjust IF to produce IC = 2 mA Figure 9. Switching Time Test Circuit and Waveforms (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 www.fairchildsemi.com 6 MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Switching Time Test Circuit and Waveforms MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Reflow Profile Temperature (C) Max. Ramp-up Rate = 3C/S TP Max. Ramp-down Rate = 6C/S 260 240 TL 220 Tsmax 200 180 Preheat Area 160 Tsmin 140 120 100 80 60 40 20 0 120 tP tL ts 240 360 Time 25C to Peak Time (seconds) Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150C Temperature Max. (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second max. Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second max. Time 25C to Peak Temperature (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 8 minutes max. www.fairchildsemi.com 7 Part Number Package Packing Method MCT6 DIP 8-Pin Tube (50 units per tube) MCT6S SMT 8-Pin (Lead Bend) Tube (50 units per tube) MCT6SD SMT 8-Pin Tape and Reel (1,000 units per reel) MCT6300 DIN EN/IEC 60747-5-5 Option Tube (50 units per tube) MCT63S SMT 8-Pin (Lead Bend); DIN EN/IEC 60747-5-5 Option Tube (50 units per tube) MCT63SD SMT 8-Pin; DIN EN/IEC 60747-5-5 Option Tape and Reel (1,000 units per reel) MCT6300W 0.4" Lead Spacing; DIN EN/IEC 60747-5-5 Option Tube (50 units per tube) Note 1. The product orderable part number system listed in this table also applies to the MCT61 and MCT62. Marking Information 1 MCT6 V 3 XX YY H 2 6 5 4 Figure 10. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 Two-Digit Year Code, e.g., "16" 5 Digit Work Week, Ranging from "01" to "53" 6 Assembly Package Code (c)2006 Fairchild Semiconductor Corporation MCT6, MCT61, MCT62 Rev.1.6 www.fairchildsemi.com 8 MCT6, MCT61, MCT62 8-Pin Dual Channel Phototransistor Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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