MBR3030PT–MBR3060PT
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 1 (4)
30A Schottky Barrier Rectifier
Features
D
Schottky barrier chip
D
Guard ring die constuction for transient
protection
D
Low power loss, high efficiency
D
High current capability and low forward voltage
drop
D
High surge capability
D
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection
application
D
Plastic material – UL Recognition flammability
classification 94V–0
14 414
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage MBR3030PT VRRM 30 V
g
=Working peak reverse voltage
DC Bl ki lt
MBR3035PT
RRM
=VRWM
V
35 V
=DC Blocking voltage MBR3040PT =VR40 V
MBR3045PT 45 V
MBR3050PT 50 V
MBR3060PT 60 V
Peak forward surge current IFSM 200 A
Average forward current TC=125
°
C IFAV 30 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=30A, TC=25
°
C MBR3030PT VF0.76 V
g
IF=20A, TC=125
°
C–MBR3045PT VF0.6 V
IF=30A, TC=25
°
C MBR3050PT VF0.8 V
IF=20A, TC=125
°
C–MBR3060PT VF0.65 V
Reverse current TC=25
°
C MBR3030PT IR1.0 mA
TC=125
°
C–MBR3045PT IR60 mA
TC=25
°
C MBR3050PT IR5.0 mA
TC=125
°
C–MBR3060PT IR100 mA
Diode capacitance VR=4V, f=1MHz CD700 pF
Thermal resistance
junction to case TL=const. MBR3030PT
–MBR3045PT RthJC 1.4 K/W
j
TL=const. MBR3050PT
–MBR3060PT RthJC 2.0 K/W
Voltage rate of change
( Rated VR ) dV/dt 10000 V/
m
s
MBR3030PT–MBR3060PT
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
0 50 100 150
0
6
12
18
24
30
15383 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.1
1.0
10
100
0 0.2 0.4 0.6 0.8
15384
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
IF Pulse Width = 300 µs
Tj = 25°C
2% Duty Cycle
MBR3030PT–
MBR3045PT
MBR3050PT–
MBR3060PT
Figure 2. Typ. Forward Current vs. Forward Voltage
0
50
100
150
200
250
300
110 100
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15385
Tj = 25°C
8.3 ms Single Half–Sine–W ave
JEDEC method
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
1000
4000
0.1 1.0 10 100
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15386
Tj = 25°C
f = 1 MHz
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
0.01
0.1
1.0
10
020 40 60 80 100 120 140
100
Percent of Rated Peak Reverse Voltage (%)
I – Reverse Current ( mA )
R
15387
Tj = 75°C
Tj = 25°C
Tj = 125°C
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
MBR3030PT–MBR3060PT
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14470
Case: molded plastic
Polarity: as marked on body
Approx. weight: 5.6 grams
Mounting position: any
Marking: type number
MBR3030PT–MBR3060PT
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
