b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)13. MISCELLANEOUS TRANSISTORS IN ORDER OF (0 CATEGORY & G2) TYPE Neo 2 "fea TEGORY M|DWG #{L C LINE TYPE U|STRUC.- A|200 EO DESCRIPTION No. No. S| TURE T|_s/a AD E TO200 DE Ser. T# |SAC42* 10 |P-A Si yTot VO-5mV maxl0-.05uA max;VCE-25V;hFE-2.5 min at 3V;1mA;4Mc/s 2# |SAC42A* 1O|P-A Si |TO1 VO0-5mV maxjO0-05uA max:VCE-25V:hFE-2.5 min at 3V;1mA4Mc/s 3# |SAC42B* 10 |P-A Si_|TO1 VO-5mV_ max;lO-.05uA max;VCE-25V;hFE-2.5 min at 3V;1mA;4Mc/s 4# |SAC44* 10 |P-A Si [TO1 VO-1t0mV;10-.01uA_ max;VCB-5V;hFE-1 min at 3V;1mA;4Mc/s 5# |SPC40* 10 [N-PE Si |TO18 VO-2mV max;VCBO-25V max;VEBO-6Vmax 6# |SPC42* 10 |N-PE Si iTO18 VO-5mV_max;VCBO-25V_max;VEBO-6Vmax 7# |SPC50* 10 |N-PE Si [R38 AVO-50uV max; rd-125 ohms typ; Double emitter device 8# |SPC51* 10 |N-PE Si |R38 AVO-100uV max; rd-125 ohms typ; Double emitter device 9# |SPC52* 10 |N-PE Si_|R38 AVO-200uV_max; rd-125 ohms typ; Double emitter device 10# [SSA43A* 10 |P-A Si {TO1 Symmetrical hFE-10 min at VE2E1-3V; IE-1mA 1t# |SSA46* 10 |P-A Si |TO1 Symmetrical hFE-7 min at VE2E1 orVE1E2-3V; 1E-1mA 12# |SSA46A 10 |P-A Si_|TO1 Symmetrical VE1E2(SAT)-50OmV_max at_IC-5mA;IB-1mA 13% |SSA48* 10 [P-A Si |TOT Symmetrical hFE- 7 min atVE2E1 or VE1E2-3V; IE-1mA 14 |ST5610 10 |N-PE Si |TO72 |GDZ|BVCBO-25V;BVEEO-18V;Voff-50uV:rs-50Q:Ton and Toff-500ns. 18 |ST5611 10 |N-PE Si_|TO72__|GD@/BVCBO-25V:BVEEO-18V;Voff-100uV_max;rs-100Q;Ton and Toff-500ns. 16 =(ST5612 10 [N-PE Si [TO72 |GD@|BVCBO-25V;BVEEO-12V;Votf-50uV max:rs-500;Ton and Toff-500ns. 17. |ST5613 10 |N-PE Si |TO72 |GDZ|BVCBO-25V;BVEEO-12V;Voff-100uV max:rs-1002;Ton and Toff-500ns. 18 |ST5614 10 |N-PE Si_|TO72 |GDZ|BVCBO-15V:BVEEO-8.0V;Voff-150uV_max;rs-1500;Ton and Toff-500ns. 19 |ST5641 10 |[N-PE Si /TO18 Voff--50mV max;rd-25 ohms max;VECO-15V min. 20 $T61000* 10 |P-PE Si |TO46 AZ|hFE(inverse)-75 min at VCE-6.0V;VEC/(off)-.80mV;rec(on)-3.0ohms. 21 ST70000* 10 |N-PE* Si |L62 Voff/IB-10uV_ max AVoff/TA-20uV_max:A/Voft1/2/TA-1OuV max. 22 |$T70001* 10 |N-PE* Si IL62 Voft/IB-25uV max;AVoff/TA-50uV_ max:A/Voff1/2/TA-25uV max. 230 |TW135 10 /P-PE Si |TO18 A |Voff-1.0mV max at IB-1.0mA;rS-20 ohms;Cib-6.0pf max. 24 U8s9* 10 |P Si_ |TO18 D| U |Cdg1-.90pf max; Cdg2-1.8pf typical at Vds-5V,Vg1s-OV,V-Vg2s-1V. 28 {UD1001 10 /P-PE Si [TO9O0 Dual Emit Pr; Pt-200mW(both sides); BVE1E20-30V; BVEBO-30. 26# |UPA16 10 |N-PE Si |L5 Pc-.6W max;hFE1/hFE2-.80 min;hFE-20 min at .2OmMA;AVoff-100uV max. 27 |2N626 11[N Ge-|Si Pc-10W max; BVCBO-30V; Ic-3.0A_max;hFE-18000 min/VCE-5.0ViIc1.0A, 28 = |2N676 11/P Ge-|Si Pc-1OW max; BVCBO-30V; Ic-3.0A max:hFE-15000/VCE-5.0V; 11.0A. 29 = |2N3230 11|NA Si |L35 Pd 25W:VCEV 80V:Ilc 7A max;hFE 1.0k min at lc 5A;Ton 350ns max. 30 |2N3231 11 INA Si_|L35 Pd-25W:VCEV-100V,IC-7A max;hFE-1000 min. at 1C-5A;Ton-350ns_max. 314 |20C26 11|P Ge |MD3 VCBO 40V:VCEO 20Vilc 3.5A;Pt 12W:hFE 20 min. 324% |20C30 11/P Ge |MD17c (CH |VCBO 32V;VCEO 16V;IC 1.4A;Pt 40W:hFE 32. 33 /4JD12x009 11 |N-PL Si_|L42 Contains 3-2N1613 transistors and_a_1N914 diode;Pt-300mW. 34 = |4JD12X010 11 )N-PL Si [L29a Contains 2-2N1613 transistors;PT-3OOmW/Transistor. 35 4JD12X011 41 4N-PL Si |L27 Contains 3-2N1613 type transistors;Darlington input and output. 36 14JD12X012 11|N-PL Si |L28 4-2N1613 type transistor;Darl.Diff.Amp.;hFE1/2-.80 to 1.25 37 4JD12X014 17 7N-PL Si [L26 Contains 3-2N1613 typ transistors;Darlington input and output. 38 (4JD12X132 11 |N-PE Si |L4 Darlington Amp;BVCBO-80V;BVCEO-60V;BVEBO-15V;Pt-.5OW. 39 12X006 11 |N-PL Si |L31 Emitter Coupled Logic or/and gate;Pt-1OOmW;hFE-120:;VCEO-15V 40 12x008 11 )N-PL $i ]L30 Functional Device and gate:Pt-100mW;hFE-120max;VCEO-15V 41 12X040 11 |N-PL Si Active Functional Device; VCEO-60V;hFE 1/hFE2-1.0;4VBE-5.0mV 42 12X058 11 {N-PL Si Active Functional Device; VCEQ-60V;hFE 1/hFE2-1.0;AVBE-10mV 43 12X059 11 ]N-PL Si Active Functional Device; VCEO-60V;hFE 1/hFE2-1.0;AVBE-5.0mV 44 |22MPG5 11/P Ge |L5 BVCBO-10V; BVCEQO-4.0V; Ic-.50A; fab