Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161 is functional through W-band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits. 231 (9.1) Features 250 (9.8) 250 (9.8) 231 (9.1) 120 (4.7) Assembly Techniques Diodes are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. Note: All dimensions in microns or (mils). Diode ESD precautions, handling considerations, and bonding methods are critical factors in successful diode performance Beam Lead = 7-9 m and reliability. Agilent application note #55, "Beam Lead Diode Bonding and Handling Procedures" provides basic information on these subjects. Additional References: PN# 2, "HSCH-9161 Diode Model," and PN# 12, "HSCH-9161 GaAs Detector Diode Sensitivity Measurements." * Low Junction Capacitance * fc >200 GHz * Lower Temperature Coefficient than Silicon * Durable Construction - Typical 6 gram beam lead strength - High power handling Die Thickness = 50-60 m Absolute Maximum Ratings Symbol Parameters/Conditions Min. Top Operating Temp. Range Tstg Storage Temp.Range PB Burnout Power Typ. Max. Units -65 150 C -65 200 C 20 dBm 7-3 DC Specifications/Physical Properties (TA = 25oC) Junction Capacitance (pF) Part Number Video Resistance (k) Voltage Sensitivity (mV/W) Typical Min. Max. Min. 1GG5-4007 .035 2.5 7.5 1GG5-4009 .035 3.4 6.4 Typ. Beam Lead Strength Mix. Unit 0.5 3 grams 0.5 3 grams Typical Diode IV Characteristic 25.0 20.0 If (mA) 15.0 10.0 5.0 0 -5.0 -10.0 -4.0 -3.0 -2.0 -1.0 0 1.0 Vf (volts) Diode Parameter Variation with Temperature 1.0 Rv - 7.0K @ 25C 10 GAMMA (mV/W) RV (Kohm) 16 14 12 Rv - 3.0K @ 25C 8 6 4 2 0 0 10 20 30 40 o Temp ( C) 50 60 70 80 DC measurement assumes 50 RF load; ideal diode would be 1mV/W. GAMMA = 0.7 mV/W @ 25C 0.8 0.6 0.4 0.2 0 GAMMA = 0.5 mV/W @ 25C 0 10 20 30 40 50 Temp (oC) 60 70 80 Note: Each line represents a different value of RV or Gamma at room temperature. Small Signal Model 0.011 pF Rs Cj 0.300 nH Rv = Rj + Rs Rj Typical Small Signal Parameters as a Function of Bias Bias Voltage Parameter -4.0V Zero Bias +0.1V +0.5V Rs() 20 20 20 20 Rj() 440 3000 277 34 Cj(pF) 0.019 0.035 0.027 0.034 Note: Parameter values extracted from 26-40 GHz s-parameter data @ -20 dBm. This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent Technologies' sales representative. 7-4 HSCH-9161/rev.3.2