934018600114 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of November 1994 1997 Feb 18

DISCRETE SEMICONDUCTORS

LLE16120X

NPN microwave power transistor

1997 Feb 18 2

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

FEATURES

•Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

•Interdigitated structure provides

high emitter efficiency

•Gold metallization realizes very

good stability of the characteristics

and excellent lifetime

•Multicell geometry gives good

balance of dissipated power and

low thermal resistance

•Internal input prematching ensures

good stability and allows an easier

design of wideband circuits.

APPLICATIONS

Intended for use in common emitter,

class AB power amplifiers in CW

conditions for professional

applications at 1.65 GHz.

DESCRIPTION

NPN silicon planar epitaxial

microwave power transistor in a

SOT437A glued cap metal ceramic

flange package, with emitter

connected to flange.

QUICK REFERENCE DATA

Microwave performance up to Tmb =25°C in a common emitter class AB

ampliﬁer.

MODE OF

OPERATION f

(GHz) VCE

(V) ICQ

(A) PL1

(W) Gpo

(dB) Zi; ZL

(Ω)

Class AB (CW) 1.65 24 0.1 ≥11 ≥8.7 see Figs 8 and 9

PINNING - SOT437A

PIN DESCRIPTION

1 collector

2 base

3 emitter connected to ﬂange

Fig.1 Simplified outline and symbol.

handbook, 4 columns

Top view

MAM112

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 3

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.2 mm from ceramic.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −45 V

VCER collector-emitter voltage RBE = 220 Ω−30 V

VCEO collector-emitter voltage open base −15 V

VEBO emitter-base voltage open collector −3V

Ccollector current (DC) −2A

tot total power dissipation Tmb =75°C−23 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −200 °C

Tsld soldering temperature t ≤10 s; note1 −235 °C

Tmb ≤75 °C.

(I) Region of permissible DC operation.

Fig.2 DC SOAR.

handbook, halfpage

−2

−1

VCE (V)

110

(1)

(A)

MRA545

Fig.3 Maximum power dissipation derating as a

function of mounting base temperature.

Ptot max =23W.

handbook, halfpage

0 50 100 150 200

Tmb (

250

Ptot

(W)

MRA544

1997 Feb 18 4

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

THERMAL CHARACTERISTICS

Note

1. See “

Mounting recommendations in the General part of handbook SC19a”

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25°C in a common emitter class AB ampliﬁer (note 1).

Note

1. The test circuit is split into 2 independant halves each being 30 ×40 mm in size.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Rth j-mb thermal resistance from junction to mounting base Tj= 100 °C 4.2 K/W

Rth mb-h thermal resistance from mounting base to heatsink note1 0.2 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current VCB = 20 V; IE=0 −1mA

(BR)CER collector-emitter breakdown voltage IC= 5 mA; RBE = 220 Ω30 −V

V(BR)CBO collector-base breakdown voltage IC= 5 mA; IB=0 45 −V

(BR)EBO emitter-base breakdown voltage IE= 5 mA; IC=0 3 −V

FE DC current gain VCE = 3 V; IC= 1 A 15 100

MODE OF

OPERATION f

(GHz) VCE

(V) ICQ

(A) PL1

(W) Gpo

(dB) ηC

(%) Zi; ZL

(Ω)

Class AB (CW) 1.65 24 0.1 ≥11;

typ. 13 ≥8.7;

typ. 10.8 typ. 45 see Figs 8 and 9

1997 Feb 18 5

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

List of components (see bias circuit)

Notes

1. In thermal contact with TR1.

2. In thermal contact with D.U.T.

COMPONENT DESCRIPTION VALUE ORDERING INFORMATION

TR1 transistor, BDT85 (or equivalent)

D1 diode, BY239800 (or equivalent); note 1

D2 diode, BY239800; note 2

R1 resistor 100 Ω

R2 resistor 3.3 kΩ

R3 resistor 56 Ω

P1 potentiometer, 10 turns (sfernice) 4.7 kΩ

C1 electrolytic capacitor 10 µF, 40 V

C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003

L1 5 turns 0.5 mm copper wire with ferrite bead

L2 5 turns 0.5 mm copper wire

Fig.4 Prematching test circuit board.

Substrate: Epsilam 10.

Thickness: 0.635 mm.

Permittivity: εr= 10.

handbook, full pagewidth

MCD661

30 mm

40 mm

30 mm

40 mm

input output

3 3 9.3 2.5 5 5

1.4 2x

0.5 2

10.5

10.2

0.5

0.635 0.635

12.5

0.5

5.8

724.5 12.5 3

0.5

11.2

1997 Feb 18 6

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

Fig.5 Class AB bias circuit at 1.65 GHz.

handbook, full pagewidth

MBC421 - 1

P1 D1

R3C1

+VCC

D.U.T.

0 V

TR1

PREMATCHINGTEST CIRCUIT

BIAS CIRCUIT

Fig.6 Load power as a function of input power.

VCE = 24 V; f = 1.65 GHz.

(1) ICQ = 100 mA.

(2) ICQ =30mA.

(3) ICQ = 3 mA.

handbook, halfpage

00.4

(W)

0.8 1.8

MGA246

1.4 PIN (W)

(1)

(2)

(3)

Fig.7 Intermodulation distortion as a function

of average output power.

VCE = 24 V; f1= 1.65 GHz; f2= 1.6502 GHz.

(1) ICQ = 3 mA.

(2) ICQ =30mA.

(3) ICQ = 100 mA.

handbook, halfpage

(dBc)

(1)

(2)

(3)

MGA245

6POUT (W)

−15

−25

−35

−45

1997 Feb 18 7

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

Fig.8 Input impedance as a function of frequency; typical values.

VCE = 24 V; Zo=10Ω; ICQ = 0.1 A.

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MGA247

1.65

1.75

1.85 GHz

0.2 0.5 1 1052

Fig.9 Optimum load impedance as a function of frequency; typical values.

VCE = 24 V; Zo=10Ω; ICQ = 0.1 A.

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MGA248

ZL1.65

1.75

1.85 GHz

0.2 0.5 1 2 105

1997 Feb 18 8

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

PACKAGE OUTLINE

Fig.10 SOT437A.

MBB945

6.5

max

0.13

max

2.3

2.0

4.8

max

1.7

max

14.22

6.5

6.2

1.7 max

4.5 min

seating

plane

4.5 min

0.25 M

O 3.3

19.1 max

Dimensions in mm.

Torque on screws: max. 0.5 Nm.

Recommended screw: M3.

Recommended pitch for mounting screw: 19 mm.

1997 Feb 18 9

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Feb 18 10

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

NOTES

1997 Feb 18 11

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor LLE16120X

NOTES

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 750 01697