1N3611GP thru 1N3614GP and 1N3957GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers * d e t n Features e t a P 1.0 (25.4) MIN. DO-204AL (DO-41) Rev. Voltage 200 to 1000V Forward Current 1.0A * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Capable of meeting environmental standards of MIL-S-19500 * Cavity-free glass passivated junction * 1.0 Ampere operation at TA=75C with no thermal runaway * Typical IR less than 0.1A * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) (R) 1.0 (25.4) MIN. Mechanical Data 0.034 (0.86) 0.028 (0.71) DIA. NOTE: Lead diameter is 0.026 (0.66) 0.023 (0.58) Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g for suffix "E" part numbers Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Parameter Symbol Ratings at 25C ambient temperature unless otherwise specified. 1N 1N 1N 1N 1N 3611GP 3612GP 3613GP 3614GP 3957GP 200 400 600 800 1000 Unit * Maximum repetitive peak reverse voltage VRRM * Maximum RMS voltage VRMS 140 280 420 560 700 V * Maximum DC blocking voltage VDC 200 400 600 800 1000 A * Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 75C IF(AV) 1.0 A * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Typical thermal resistance (Note 1) RJA RJL 55 25 C/W TJ, TSTG -65 to +175 C Operating junction and storage temperature range Electrical Characteristics V Ratings at 25C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 1.0A VF 1.0 V IR 1.0 300 A Typical reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A trr 2.0 s Typical junction capacitance at 4.0V, 1MHz CJ 8.0 pF * Maximum DC reverse current at rated DC blocking voltage TA = 25C TA = 150C Notes: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted *JEDEC registered values Document Number 88502 11-Feb-02 www.vishay.com 1 1N3611GP thru 1N3614GP and 1N3957GP Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 - Max. Forward Current Derating 30 60HZ Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0.8 0.6 0.4 0.2 0.375" (9.5mm) Lead Length 0 TJ = TJmax 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5.0 0 25 50 75 100 125 150 1 175 10 Ambient Temperature (C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 10 10 Instantaneous Reverse Current (A) Instantaneous Forward Current (A) 20 TJ = 25C Pulse Width = 300s 1% Duty Cycle 1 0.1 0.01 0.6 TJ = 100C 1 0.1 TJ = 25C 0.01 0.8 1.0 1.2 1.4 1.6 0 60 80 100 100 20 Transient Thermal Impedance (C/W) TJ = 25C f = 1.0MHZ Vsig = 50mVp-p 10 1 10 Reverse Voltage (V) www.vishay.com 2 40 Fig. 6 - Typical Transient Thermal Impedance Fig. 5 - Typical Junction Capacitance 1 0.1 20 Percentage of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (V) Junction Capacitance (pF) 100 Number of Cycles at 60HZ 100 10 1 0.1 0.01 0.1 1 10 100 t -- Pulse Duration (sec) Document Number 88502 11-Feb-02