we 7929237 0029377 1 mm | 33-29 Kwa SGS-THOMSON 2N6034/35/36 7 iicrostecrRomics _ _2N6037/38/39 SG S-THOMSON 3a0E D MEDIUM POWER DARLINGTONS DESCRIPTION The 2N6037, 2N6038 and 2N6039 are silicon epi- taxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively. TO-126 INTERNAL SCHEMATIC DIAGRAMS NPN PNP ABSOLUTE MAXIMUM RATINGS PNP |2N6034|2N6035/2N6036 ' Symbol Parameter NPN |2Ne037|2N6o38/2Ne039| Unit Vcso Collector-base Voltage (le = 0) 40 60 80 Vv Vceo Colletor-emitter Voltage (Ip = 0) 40 60 80 Vv Veso Emitter-base Voltage (Ic = 0) 5 v Io Collector Current 4 A lom Collector Peak Current 8 A lp Base Current 100 mA Prot Total Power Dissipation at Tcase < 25C 40 Ww Tstg Storage Temperature 65 to 150 C Tj Junction Temperature 150 C January 1989 1/4 11312N6034/35/37-2N6037/38/39 Me 7929237? 0029378 3 THERMAL DATA S G S-THOMSON JOE D Rinj-case | Thermal Resistance Junction-case Max 3.12 CW Rthj-amb | Thermal Resistance Junction-ambient Max 83.3 C/W 4 . ELECTRICAL CHARACTERISTICS (Tease = 25C unless otherwise specified) . T-33-29 . Symbol Parameter Test Conditions Min. Typ. Max. Unit lcoBo Collector Cuttoff Current for 2N6034/37 Vor =40V 100 pA _ (le = 0) for 2N6035/38 Vcr =60V 100 pA for 2N6036/39 Vcr =80V 100 pA IcEo Collector Cutoff Current for 2N6034/37 Voce =40V 100 pA (Ip = 0) for 2N6035/38 Vce =60V 100 LA for 2N6036/39 Vce = 80V 100 pA Ioex Collector Cutoff Current for 2N6034/37 Voce =40V 01 mA (Veg = 1.5V) for 2N6035/38 Vcr =60V 0.1 mA _ for 2N6036/39 Vce = 80V 0.1 mA __ Toase = 125C for 2N6034/37 Vcore =40V 0.5 mA for 2N6035/38 Vce =60V 05 mA for 2N6036/39 Vce = 80V 0.5 mA leso Emitter Cutoff Current Ves =5V 2 mA (Ic = 0) Vceo(sus) | Collector-emitter Sustaining | Ic = 100mA for 2N6034/37| 40 Vv Voltage (lg = 0) for 2N6035/38| 60 v for 2N6036/39| 80 Vv Vee(saty* | Collector-emitter Saturation Io =2A Ip =8mA 2 Vv Voltage Ic =4A Ip = 40mA 3 Vv Vee(saty | Base-emitter Saturation Io =4A Ig =40mA 4 Vv Voltage Vee* Base-emitter Voltage Io =2A Vor =3V 2.8 Vv hee* DC Current Gain Ic = 0.5A Voce =3V 500 Io =2A Vcr =3V 750 15000 Io =4A Voce =3V 100 hte Small Signal Current Gain Io =0.75A Voce = 10V 25 f = 1MHz Copo Collector-base Capacitance | Vcp = 10V le =0 (100 f = {MHz * Pulsed : pulse duration = 300ys, duty cycle < 1.5%. (*) for PNP types 200pF. 2/4 1132mm 78e%e37? 0029379 5 __2N6034/35/36-2N6037/38/39 SG S-THOMSON JOE D Safe Operating Areas. G-S110 Ic (a) 10 10" 1 10 10? Vee (Vv) DC Transconductance Ic (a) 0 as 1 1B Ve Small Signal Current Gain. G-5116 Nes i 10%, 4 2 ow, i 4 2 v, fy a v, 6 4 7 ' 2 468 2 46 2 468 Rae 2046 107 2 0" 1 {(MHz) OT DC Current Gain. 4 T-33-29 z 4 ss 1 4 oe 107 1 Ic Collector-emitter Saturation Vol- G-5i3 Ww) 0 107 1 iota) Collector-emitter Saturation Voltage (NPN). 0 1 2 3 Ig (ma) SGS-THOMSON 3/4 MISRCELESTRONEES 11332N6034/35/37-2N6037/38/39 MM 7929237 0029380 1 Saturated Switching Characteristics (NPN). t (ps) 4 10 a . + . 1 Ic (4) Saturated Switching Characteristics (PNP). 1 {ys} : ' <tc Collector-emitter Saturation Voltage (PNP). D T-33-29 LS 0.5 3 -Ig (ma) - 6 S-THOMSON 4rd 1134 ky JOE D SGS-THOMSON MICRCELECTREMCS