Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-12 Key Features and Performance * * * * * * * Frequency Range: DC - 12 GHz > 42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 12mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 900-1500mA (Under RF Drive, Id rises from 900mA to 2560mA) Chip Dimensions: 0.57 x 2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in) * Product Description Primary Applications The TriQuint TGF2021-12 is a discrete 12 mm pHEMT which operates from DC-12 GHz. The TGF2021-12 is designed using TriQuint's proven standard 0.35um power pHEMT production process. * * * * * The TGF2021-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-has a protective surface passivation layer providing environmental robustness. 35 30 Maximum Gain (dB) The TGF2021-12 typically provides 42 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-12 appropriate for high efficiency applications. Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications 25 MSG 20 15 MAG 10 5 0 0 2 4 6 8 10 12 14 16 Frequency (GHz) Lead-free and RoHS compliant 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Product Datasheet August 7, 2007 TGF2021-12 TABLE I MAXIMUM RATINGS Symbol V+ Parameter 1/ Positive Supply Voltage - Value Notes 12.5 V 2/ V Negative Supply Voltage Range I+ Positive Supply Current 5.6 A | IG | Gate Supply Current 70 mA PIN Input Continuous Wave Power 36 dBm 2/ PD Power Dissipation See note 3 2/ 3/ TCH Operating Channel Temperature 150 C 4/ TM Mounting Temperature (30 Seconds) 320 C TSTG -5V to 0V 2/ -65 to 150 C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 8.3 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (TA = 25 C, Nominal) Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 3600 - mA Gm Transconductance - 4500 - mS VP Pinch-off Voltage -1.35 -1 -0.65 V -30 - -8 V -30 - -15 V VBGS VBGD Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Product Datasheet August 7, 2007 TGF2021-12 TABLE III RF CHARACTERIZATION TABLE 1/ (TA = 25 C, Nominal) PARAMETER Vd = 10V Idq = 900mA Vd = 12V Idq = 900mA UNITS Psat Saturated Output Power 41.5 42 dBm PAE Power Added Efficiency 49 47 % Gain Power Gain 11 11 dB L 2/ Load Reflection coefficient 0.947 177.7 0.947 176.9 - Psat Saturated Output Power 41 41.8 dBm PAE Power Added Efficiency 58 52 % Gain Power Gain 11.5 11 dB L 2/ Load Reflection coefficient 0.956 176.2 0.955 175.8 - SYMBOL Power Tuned: Efficiency Tuned: 1/ Values in this table are scaled from measurements taken from a 1.5mm unit pHEMT cell at 10 GHz 2/ Optimum load impedance for maximum power or maximum PAE at 10 GHz TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 10 V Idq = 900 mA Pdiss = 9 W TCH (oC) JC (C/W) TM (HRS) 145 8.3 1.6E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Product Datasheet August 7, 2007 TGF2021-12 Linear Model for 1.5mm Unit pHEMT Cell OUT L Rdg Lg Rg Cdg Gate Rgs Cgs Rd + Vi Ri gmVi Rds Ld Drain Cds - Unit pHEMT cell Reference Plane Ls Rs Source Source Source Drain Gate UPC Source UPC = 1.5 mm Unit pHEMT Cell MODEL PARAMETER Vd = 8 V Idq = 112.5 mA Vd = 8 V Idq = 150 mA Vd = 10 V Idq = 150 mA Vd = 12 V Idq = 112.5 mA UNITS Rg 0.430 0.430 0.430 0.430 0.430 0.430 Rs 0.090 0.080 0.008 0.100 0.090 0.110 Rd 0.320 0.320 0.330 0.300 0.320 0.280 gm 0.450 0.457 0.445 0.426 0.429 0.407 S Cgs 3.504 3.770 3.938 3.800 3.974 3.945 pF 0.950 0.940 0.960 0.960 0.980 0.990 Cds 0.300 0.303 0.306 0.301 0.304 0.301 pF Rds 100.040 102.720 107.550 116.310 118.32 127.590 Cgd 0.170 0.158 0.150 0.151 0.147 0.143 pF Tau 6.640 7.050 7.470 7.600 7.920 8.260 pS Ls 0.070 0.070 0.070 0.070 0.070 0.070 nH Lg 0.098 0.098 0.098 0.098 0.098 0.098 Ld 0.042 0.040 0.040 0.040 0.039 0.039 Rgs 28700 26700 24000 25500 29500 18100 Rgd 282000 304000 217000 30400 312000 241000 Ri Vd = 8 V Vd = 10 V Idq = 187.5 mA Idq = 112.5 mA nH nH 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Product Datasheet August 7, 2007 TGF2021-12 Linear Model for 12mm pHEMT L - via = 0.0135 nH (9x) 8 UPC 9 7 UPC 10 6 UPC 11 Drain Pads (8x) Gate Pads (8x) 5 UPC 12 4 UPC 13 3 UPC 14 2 UPC 15 1 UPC 16 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Product Datasheet August 7, 2007 TGF2021-12 Unmatched S-parameter for 12mm pHEMT Bias Conditions: Vd=12V Idq=900mA Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.174 -170.57 16.046 91.04 -42.423 4.64 -1.989 -177.60 1 -0.173 -175.33 10.021 84.91 -42.446 2.14 -1.958 -177.91 1.5 -0.171 -176.93 6.460 80.41 -42.518 1.29 -1.927 -177.64 2 -0.170 -177.76 3.903 76.35 -42.621 0.92 -1.889 -177.26 2.5 -0.168 -178.26 1.889 72.50 -42.751 0.83 -1.842 -176.86 3 -0.165 -178.61 0.216 68.79 -42.905 0.96 -1.788 -176.48 3.5 -0.163 -178.88 -1.226 65.20 -43.081 1.29 -1.728 -176.14 4 -0.160 -179.09 -2.501 61.73 -43.276 1.84 -1.665 -175.84 4.5 -0.157 -179.26 -3.650 58.35 -43.484 2.62 -1.598 -175.59 5 -0.154 -179.41 -4.700 55.08 -43.702 3.63 -1.530 -175.39 5.5 -0.151 -179.54 -5.670 51.92 -43.925 4.88 -1.461 -175.24 6 -0.148 -179.66 -6.575 48.85 -44.148 6.39 -1.393 -175.13 6.5 -0.145 -179.78 -7.425 45.90 -44.364 8.15 -1.326 -175.07 7 -0.141 -179.88 -8.227 43.04 -44.569 10.16 -1.261 -175.04 7.5 -0.138 -179.98 -8.987 40.28 -44.756 12.41 -1.198 -175.04 8 -0.135 179.92 -9.712 37.62 -44.918 14.88 -1.137 -175.08 8.5 -0.133 179.83 -10.403 35.05 -45.052 17.55 -1.079 -175.14 9 -0.130 179.74 -11.065 32.57 -45.151 20.38 -1.024 -175.22 9.5 -0.128 179.65 -11.701 30.18 -45.212 23.34 -0.972 -175.32 10 -0.125 179.56 -12.312 27.88 -45.233 26.38 -0.922 -175.44 10.5 -0.123 179.47 -12.901 25.65 -45.213 29.46 -0.876 -175.57 11 -0.121 179.39 -13.469 23.51 -45.152 32.53 -0.832 -175.72 11.5 -0.120 179.31 -14.019 21.45 -45.052 35.56 -0.790 -175.87 12 -0.118 179.23 -14.550 19.46 -44.917 38.50 -0.751 -176.03 12.5 -0.116 179.15 -15.064 17.54 -44.749 41.33 -0.715 -176.20 13 -0.115 179.08 -15.562 15.69 -44.553 44.02 -0.681 -176.37 13.5 -0.113 179.00 -16.045 13.91 -44.333 46.57 -0.648 -176.55 14 -0.111 178.93 -16.513 12.19 -44.094 48.96 -0.618 -176.73 14.5 -0.110 178.85 -16.968 10.52 -43.840 51.18 -0.590 -176.91 15 -0.108 178.78 -17.410 8.91 -43.575 53.25 -0.563 -177.09 15.5 -0.107 178.70 -17.841 7.35 -43.302 55.15 -0.538 -177.27 16 -0.105 178.63 -18.260 5.84 -43.023 56.92 -0.514 -177.45 16.5 -0.104 178.55 -18.670 4.38 -42.742 58.54 -0.492 -177.64 17 -0.103 178.48 -19.070 2.97 -42.459 60.03 -0.471 -177.82 17.5 -0.101 178.41 -19.460 1.59 -42.177 61.40 -0.451 -178.00 18 -0.100 178.34 -19.843 0.26 -41.897 62.66 -0.433 -178.18 18.5 -0.099 178.26 -20.217 -1.03 -41.620 63.81 -0.415 -178.36 19 -0.098 178.19 -20.584 -2.29 -41.346 64.88 -0.399 -178.54 19.5 -0.097 178.12 -20.944 -3.50 -41.076 65.85 -0.383 -178.72 20 -0.096 178.05 -21.298 -4.69 -40.810 66.75 -0.368 -178.90 20.5 -0.096 177.98 -21.646 -5.83 -40.549 67.58 -0.354 -179.07 21 -0.095 177.91 -21.989 -6.95 -40.293 68.34 -0.341 -179.24 21.5 -0.094 177.83 -22.326 -8.03 -40.042 69.04 -0.328 -179.42 22 -0.093 177.76 -22.658 -9.08 -39.795 69.68 -0.316 -179.59 22.5 -0.093 177.69 -22.986 -10.10 -39.554 70.28 -0.304 -179.76 23 -0.092 177.62 -23.310 -11.10 -39.318 70.83 -0.294 -179.92 23.5 -0.091 177.55 -23.629 -12.07 -39.086 71.34 -0.283 179.91 24 -0.091 177.48 -23.946 -13.01 -38.859 71.81 -0.273 179.74 24.5 -0.090 177.41 -24.259 -13.94 -38.637 72.24 -0.264 179.58 25 -0.090 177.35 -24.569 -14.85 -38.419 72.64 -0.255 179.42 25.5 -0.089 177.28 -24.877 -15.75 -38.206 73.01 -0.246 179.26 26 -0.089 177.21 -25.184 -16.63 -37.997 73.35 -0.238 179.10 Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network. 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Product Datasheet August 7, 2007 TGF2021-12 Mechanical Drawing 2.930 [0.115] 2.829 [0.111] 2.585 [0.102] 8 9 2.618 [0.103] 2.265 [0.089] 7 10 2.265 [0.089] 1.945 [0.077] 6 11 1.945 [0.077] 1.625 [0.064] 5 12 1.625 [0.064] 1.305 [0.051] 4 13 1.305 [0.051] 0.985 [0.039] 3 14 0.985 [0.039] 0.665 [0.026] 2 15 0.665 [0.026] 0.345 [0.014] 1 16 0.313 [0.012] 0.096 [0.004] 0.000 [0.000] DRAIN 0.469 [0.018] 0.565 [0.022] 0.000 [0.000] 0.095 [0.004] 17 0.263 [0.010] GATE 18 Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond pads # 1-8: pads # 9-16: Pad #17: Pad #18: (Gate) (Drain) (Vg*) (Vg*) 0.090 x 0.090 (0.004 x 0.004) 0.090 x 0.090 (0.004 x 0.004) 0.090 x 0.090 (0.004 x 0.004) 0.090 x 0.090 (0.004 x 0.004) *Note: Bond pads #17 & 18 are alternate gate pads that can be used for paralleling FETs. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Product Datasheet August 7, 2007 TGF2021-12 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use flux Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev - Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint: TGF2021-12