VS-FA40SA50LC
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Power MOSFET, 40 A
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)
(2) Starting TJ = 25 °C, L = 500 μH, Rg = 2.4 , IAS = 40 A (see fig. 18)
(3) ISD 40 A, dIF/dt 200 A/μs, VDD V(BR)DSS, TJ 150 °C
PRIMARY CHARACTERISTICS
VDSS 500 V
RDS(on) 106 m
ID40 A
Type Modules - MOSFET
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous drain current at VGS 10 V ID
TC = 25 °C 40
ATC = 90 °C 29
Pulsed drain current IDM (1) 150
Power dissipation PD
TC = 25 °C 543 W
TC = 90 °C 261
Gate to source voltage VGS ± 20 V
Single pulse avalanche energy EAS (2) 400 mJ
Repetitive avalanche current IAR (1) 13 A
Repetitive avalanche energy EAR (1) 42 mJ
Peak diode recovery dV/dt dV/dt (3) 10 V/ns
Operating junction and storage temperature range TJ, TStg -55 to +150 °C
Insulation withstand voltage (AC-RMS) VISO 2.5 kV
Mounting torque M4 screw, on terminals and heatsink 1.3 Nm
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Note
(1) Pulse width 300 μs, duty cycle 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg -55 - 150 °C
Junction to case RthJC - - 0.23 °C/W
Case to heatsink RthCS Flat, greased surface - 0.05 -
Weight -30 - g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V(BR)DSS VGS = 0 V, ID = 1.0 mA 500 - - V
Breakdown voltage temperature coefficient V(BR)DSS/TJReference to 25 °C, ID = 1 mA - 0.65 - V/°C
Static drain to source on-resistance RDS(on) (1) VGS = 10 V, ID = 23 A - 106 130 m
Gate threshold voltage VGS(th)
VDS = VGS, ID = 250 μA 2 3 4 V
VDS = VGS, ID = 250 μA, TJ = 125 °C - 1.9 -
Forward transconductance gfs VDS = 50 V, ID = 23 A - 29 - S
Drain to source leakage current IDSS
VDS = 500 V, VGS = 0 V - 0.5 50 μA
VDS = 500 V, VGS = 0 V, TJ = 125 °C - 30 500
VDS = 500 V, VGS = 0 V, TJ = 150 °C - 0.2 3 mA
Gate to source forward leakage IGSS
VGS = 20 V - - 200 nA
Gate to source reverse leakage VGS = - 20 V - - - 200
Total gate charge QgID = 38 A
VDS = 400 V
VGS = 10 V; see fig. 15 and 19 (1)
- 280 420
nCGate to source charge Qgs -3755
Gate to drain (“Miller”) charge Qgd - 150 220
Turn-on delay time td(on)
VDD = 250 V, ID = 40 A, Rg = 2.4
L = 500 μH, diode used: 60APH06
- 143 -
ns
Rise time tr-33-
Turn-off delay time td(off) - 107 -
Fall time tf-36-
Turn-on delay time td(on) VDD = 250 V, ID = 40 A, Rg = 2.4
L = 500 μH, TJ = 125 °C, diode used:
60APH06
- 145 -
ns
Rise time tr-35-
Turn-off delay time td(off) - 110 -
Fall time tf-40-
Internal source inductance LSBetween lead, and center of die
contact -5-nH
Input capacitance Ciss VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 14
- 6900 -
pFOutput capacitance Coss - 1600 -
Reverse transfer capacitance Crss - 580 -
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Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)
(2) Pulse width 300 μs, duty cycle 2 %
Fig. 1 - Maximum DC MOSFET Drain-Source Current vs.
Case Temperature
Fig. 2 - Typical Drain-to-Source Current Output Characteristics;
VGS = 10 V
Fig. 3 - Typical Drain-to-Source Current Output Characteristics
at TJ = 25 °C
Fig. 4 - Typical Drain-to-Source Current Output Characteristics
at TJ = 125 °C
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current
(body diode) ISMOSFET symbol
showing the integral reverse
p-n junction diode.
--38
A
Pulsed source current (body diode) ISM (1) - - 150
Diode forward voltage VSD (2) TJ = 25 °C, IS = 38 A, VGS = 0 V - 0.9 1.31 V
TJ = 125 °C, IS = 38 A, VGS = 0 V - 0.75 -
Reverse recovery time trr
TJ = 25 °C, IF = 40 A; dIF/dt = 100 A/μs (2)
- 560 - ns
Reverse recovery current Irr -40- A
Reverse recovery charge Qrr -11-μC
Reverse recovery time trr
TJ = 25 °C, IF = 40 A; dIF/dt = 100 A/μs (2)
- 680 - ns
Reverse recovery current Irr -47- A
Reverse recovery charge Qrr -16-μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
S
D
G
0
20
40
60
80
100
120
140
160
0 102030405060
Allowable Case Temperature (°C)
Continuous Drain-Source Current IDS (A)
0.1
1
10
100
0.1 1 10
I
DS
- Drain to Source Current (A)
V
DS
- Drain to source Voltage (V), at V
GS
= 10 V
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
V , Drain-to-Source Voltage (V)
, Drain-to-Source Current (A)
DS
IDS , Drain-to-Source Current (A)
0
20
40
60
80
100
120
02468101214161820
V
GS
= 5 V
V
GS
= 6 V
V
GS
= 7 V
V
GS
= 15 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V , Drain-to-Source Voltage (V)
, Drain-to-Source Current (A)
DS
I , Drain-to-Source Current (A)
02468101214161820
DS
0
10
20
30
40
50
60
70
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 15 V
V
GS
= 12 V
V
GS
= 10 V
V
GS
= 8 V V
GS
= 7 V
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Fig. 5 - Typical Drain-to-Source Current Output Characteristics
at TJ = 150 °C
Fig. 6 - Normalized On-Resistance vs. Temperature
Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics
Fig. 8 - Typical MOSFET Transfer Characteristics
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
Fig. 10 - Typical MOSFET Threshold Voltage
V , Drain-to-Source Voltage (V)
, Drain-to-Source Current (A)
DS
IDS , Drain-to-Source Current (A)
0
10
20
30
40
50
60
02468101214161820
VGS = 5 V
VGS = 6 V
VGS = 10 V
VGS = 12 V
VGS = 15 V
VGS = 7 V
VGS = 8 V
80
100
120
140
160
180
200
220
240
260
280
300
320
0 20 40 60 80 100 120 140 160
T - Junction Temperature (°C)
R - Drain-to-Source On Resistance (mΩ)
J
DS(on)
V=
I=
GS
D
10 V
40 A
0
40
80
120
160
200
240
280
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
FSD
- Forward Source to Drain Current (A)
V
FSD
- Drain to Source Forward Voltage
Drop Characteristics (V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C
0
20
40
60
80
100
120
140
2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5
I
D
- Drain to Source current (A)
V
GS
- Gate to Source Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600
IDSS - Drain to Source Current (mA)
VDSS - Drain to Source Voltage (V)
0.00001
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.20 0.40 0.60 0.80 1.00
V
GSth
- Threshold Voltage (V)
I
D
(mA)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
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Fig. 11 - Typical MOSFET Switching Time vs. IDS, TJ = 125 °C,
VDD = 250 V, VGS = 10 V, L = 500 μH, RG = 2.4
Diode used 60APH06
Fig. 12 - Typical MOSFET Switching Time vs. RG, TJ = 125 °C,
IDS = 40 A, VDD = 250 V, VGS = 10 V, L = 500 μH
Diode used 60APH06
Fig. 13 - Maximum Thermal Impedance ZthJC Characteristics, MOSFET
Fig. 14 - Typical Capacitance vs. Drain to Source Voltage Fig. 15 - Typical Gate Charge vs.
Gate to Source Voltage
0.01
0.1
1
0 1020304050
Switching time (μs)
Drain to source current - I
DS
(A)
t
d(on)
t
d(off)
t
f
t
r
0.01
0.1
1
0 102030405060
Swiching Time (μs)
R
G
(Ω)
t
f
t
r
t
d(on)
t
d(off)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
ZthJC - Thermal Impedance
Junction to Case ( °C/W)
t1 - Rectangular Pulse Duration (s)
0.75
0.50
0.25
0.1
0.05
0.02
DC
1. Duty Cycle, D =
2. Peak TJ = PDM x ZthJC + TC
t1
t2
t1
t2
Notes:
PDM
1 10 100
0
2000
4000
6000
8000
10000
12000
14000
16000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
080 160 240 320 400
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
19
38A
V = 100V
DS
V = 250V
DS
V = 400V
DS
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Fig. 16 - Maximum Safe Operating Area
Fig. 17 - Switching Time Test Circuit
Fig. 18 - Switching Time Waveforms
Fig. 19 - Unclamped Inductive Test Circuit
Fig. 20 - Unclamped Inductive Waveforms
Fig. 21 - Basic Gate Charge Waveform
Fig. 22 - Gate Charge Test Circuit
1
10
100
1000
1 10 100 1000 10 000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10 μs
100 μs
1 ms
10 ms
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
D.U.T.
10 V
+
-
VDS
RD
VDD
RG
VGS
V
DS
90%
0%
GS
t
d(on)
t
r
t
d(off)
t
f
0.01 Ω
D.U.T
L
+
-
Driver
A
15 V
20 V
RG
VDS
IAS
tp
VDD
tp
V
(BR)DSS
I
AS
Q
G
Q
GS
Q
GD
V
G
Charge
10V
D.U.T. VDS
ID
IG
3 mA
VGS
.3 µF
50 KΩ
.2 µF
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
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Fig. 23 - Peak Diode Recovery dV/dt Test Circuit
Fig. 24 - For N-Channel Power MOSFETs
+
-
+
+
+
-
-
-
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - Device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
1
24
3
RG
VDD
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
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ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch S
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1
- Power MOSFET
2
- A = generation 3, MOSFET silicon die
3
- Current rating (40 = 40 A)
4
-Single switch
5
- Package indicator (SOT-227)
6
- Voltage rating (50 = 500 V)
8
7
- LC = low charge
Device code
51 32 4 6 7 8
FA40SA50LCVS-
-Vishay Semiconductors product
3
(D)
2
(G)
4
(S)
1
(S)
S(1-4)
D(3)
G(2)
1
(S)
4
(S)
3
2
(D)
(G)
Lead Assignment
Outline Dimensions
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SOT-227 Generation II
DIMENSIONS in millimeters (inches)
Note
• Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010) CA B
4 x M4 nuts
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
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