A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVDSS ID = 100 mA 125 V
IDSS VDS = 50 V VGS = 0 V 5.0 mA
IGSS VDS = 0 V VGS = 20 V 1.0 µ
µµ
µA
VGS(th) ID = 100 mA VDS = 10 V 1.0 5.0 V
VDS(on) ID = 10 A VGS = 10 V 5 V
gfs ID = 5.0 A VDS = 10 V 5.0 mhos
Ciss
Coss
Crss
VDS = 50 V VGS = 0 V f = 1.0 MHz 350
250
15 pF
Gps
η
ηη
ηVDD = 50 V IDQ = 500 mA Pout = 300 W
f = 175 MHz 14
50 16
55 dB
%
ψ
ψψ
ψVSWR = 5:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER
RF FIELD-EFFECT POWER TRANSISTOR
MRF151G
DESCRIPTION:
The ASI MRF151G is a Dual
Common Source N- Channel
Enhancement-Mode MOSFET
RF Power Transistor , Designed for
175 MHz, 300 W Transmit t er and
Amplif ier Applications.
MAXI MUM RATINGS
ID40 A
VDSS 125 V
VGS ±40 V
PDISS 500 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 0.35 OC/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GA TE
5 = SOURCE
